LS2037 Search Results

full wave controlled rectifier using RC triggering circuit

Abstract: 3M Electric Joint Compound SF1154 C702 diode dissipator C702 C702L C702LA C702LB C702LC
Contextual Info: High Power Silicon Controlled Rectifier C702 1000 A Avg. Up To 2400V AMF’ LI F Y l NG G A T E The General Electric C 702 Silicon Controlled R ectifier feature the new ly developed m ulti-diffusion tech n ology to com bine high blocking voltage cap­ ability with low on-state con d uction losses.

C601PN

Abstract: scotchbrite C701PN diodes C441 C702 C440 C440E C440M C701PM C440S
Contextual Info: PHASE CONTROL SCR's 2 7 6 .1 27 6 940 TO 1950 AMPERES GE TYPE ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION •t R M S . T (A V ) , T{ A V ) . TSM ,2. 11 y TM R Max. average on-state current @ 180° conduction (A) @ T q Max. average on*state current fo r 3^

C501

Abstract: C501N C501P C501PA C501PB C501PC C501PD C501PE C501S C501T
Contextual Info: SCR C501 550 A Avg. up to 1800 V AM PLIFYING GATE The C501 Series o f high power devices feature the proven, multi-diffused construction in a new, larger, pressure-mounted package. FEATURES: • • • • • • • Short Delay Time Pressure Contacts Glazed Ceramic Package w ith 1" Creepage Path

T305

Abstract: dissipator C795 C795CA C795CB C795CP C795LN C795LT SF1154
Contextual Info: C795 100mm THYRIST OR PRESSP THYRISTOR PRESSPA AK 3200V / 3800A Type C795 thyristor is suitable for phase control applications such as high voltage valves used on static Var compensators and thyristor controlled series compensation. It is especially optimized to handle frequently applied heavy

FN 1016

Abstract: SCR 800V 50A C613 C613L C613PE C613PM C613PN C613PS C613PT RS-397
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO 400 u V * 300 IO fO o <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 R M S C U R R E N T -A M P E R E S

alcoa electrical joint compound

Abstract: c180 scr C180PC C501 C180 C380 C380A C380B alcoa electrical joint compound #2 C380D
Contextual Info: PHASE CONTROL SCR's 110 235 TO 850 AMPERES | GETYPE C180 C380 C390 C391 C 501 C502 1 500-1300 100-1300 500-1 TDM *,wv 1300-1800 700 1700 1500-2000 1 735 850 550 @ 6 5 JC 500 @ 65°C 850 550 @65°C 550 @ 57°C 850 135 @ 80°C 380 235 /• 80°C 180 @ 80°C

C701

Abstract: c701 scr 7377 AGT Thyristor dissipator C701PM C701PN C701PA C701PB C701PC
Contextual Info: G E CO/ S T A T I C GE-SPCO PtilR CMPNT 3Ô7HS04 DGGQCH? T H 6 E S P 34E D High Power 53mm Silicon Controlled Rectifier I A / V Static Power Component Operation Mah>emJ,A USA 300 T - 2 5 - 2 - 1 2000 PG 6.050A 9/1/88 C701 AM PLIFY IN G G A TE The C70J Reverse Blocking Thyristor now has extended voltage blocking

SF-1154

Abstract: SF1154 dissipator presspak diode C795 C795CA C795CB C795CP C795LN C795LT
Contextual Info: C795 100mm THYRISTOR PRESSPAK 3200V / 3800A SPCO Type C795 thyristor is suitable for phase control applications such as high voltage valves used on static Var compensators and thyristor controlled series compensation. It is especially optimized to handle frequently applied heavy

alcoa electrical joint compound

Abstract: SF1154 dissipator presspak diode A800 A800L A800LA A800LB G322L A800LD
Contextual Info: A800 77mm RECTIFIER DIODE 2600V / 4400A SPCO The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

Contextual Info: C795 100mm THYRIST AK OR PRESSP PRESSPA THYRISTOR 3200V / 3800A Type C795 thyristor is suitable for phase control applications such as high voltage valves used on static Var compensators and thyristor controlled series compensation. It is especially optimized to handle frequently applied heavy

alcoa electrical joint compound

Abstract: ge 142 GE-SPCO presspak C792 C792EE C792EM C792EN C792ES C792ET
Contextual Info: SbE D- E CO-. STATIC PUR CUPNT G g - S P C • 3Ô74SÔ4 DQGOObS fl ■ ~r~25~2-l C792 lOOmm THYRISTOR PRESSPAK 6000V12100A Q The GE type C792 thyristor is suitable forphase control applications such as forHVDC valves,static VAR compensators and synchronous motor drives.The silicon junction design utilizes a second

SF1154

Abstract: ge 142 G322L 12116 C793CM C793 C793CE C793CN C793CS C793CT
Contextual Info: E CO-. S T A T I C PUR GE-SPCO CMPNT 2bE D I 30745Ô4 QQOQQb'ì S WÊ C793 T-25-ZI lOOmm THYRISTOR PRESSPAK 4000V /3400A The GE type C793 thyristor is suitable for phase control applications such as for HVDC valves,static VAR compensators and synchronous motor drives.The silicon junction design utilizes a second

Dow Corning 735

Abstract: dow corning silicone compound alcoa electrical joint compound 2600 corning SF1154 dissipator Silicones dow corning 732 A801CA A801CB
Contextual Info: A801 77mm RECTIFIER DIODE 3200V / 3900A SPCO The rectifier diode feature a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

SF1154

Abstract: DC550 alcoa electrical joint compound LS2037 dow corning 732 dissipator presspak C770 C770A Alcoa
Contextual Info: INVERTER THYRISTOR C770 & C770A SPCO 77mm / 1800V / 60-80us Disc-type ceramic PRESSPAK package Type C770 reverse blocking thyristor is suitable for inverter applications.The silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate

SF1154

Abstract: SF-1154
Contextual Info: A800 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

alcoa electrical joint compound

Abstract: SF1154 C613 3M Electric Joint Compound C612 C648 C648E C648M C648P C648T
Contextual Info: 700 TO 1500 AMPERES C648 C612 C613 C712 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1 5 0 0 -1 8 0 0 GE TYPE CONSTRUCTION ELE C T R IC A L SPECIFIC AT IO N S VO LTAG E RANG E FO RW ARD CONDUCTION . 'T R M S

SF1154

Abstract: SF-1154 G322L G623 alcoa electrical joint compound 3m scotch-brite DC550 6rt2 ALCOA LS2037
Contextual Info: A801 77mm RECTIFIER DIODE 3200V / 3900A The rectifier diode feature a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

dissipator

Abstract: GE-SPCO SF116 TI 745A A800 A800L A800LA A800LB A800LC A800LD
Contextual Info: GE-SPCO 34E D • 3ß74Sß4 0000156 b H G E S P A800 —-oc-tb 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design, manufactured by Staiic ¿'öwer Component uoeràtion Malvern,PA USA G E CO/ S T A T I C PUR CMPN T

SF1154

Abstract: dissipator presspak A800 A800L A800LA A800LB A800LC A800LD A800LE
Contextual Info: A800 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

C701PB

Abstract: C701 c701 scr C701L dissipator C701PA C701PC C701PD C701PE C701PM
Contextual Info: High Power Silicon Controlled Rectifier C701 12 5 0 A A v g ., u p to 20 0 0 Volts "A AMPLIFYING GATE ^ Y 1^ The C701 Series o f high power SCR’s feature the newly developed multi­ diffusion technology using 53mm diameter silicon in a new, pressuremounted package for phase control.

c701 scr

Abstract: C701 ge scr 150a dissipator C440 C440E C440M C440N C701PN C440T
Contextual Info: PHASE CONTROL SCR's 2 7 6 .1 27 6 940 TO 1950 AMPERES GE TYPE ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION •t RMS . T (A V ) , T{ A V ) . TSM ,2. 11 y TM R Max. average on-state current @ 180° conduction (A) @ T q Max. average on*state current fo r 3^

semiconductors

Abstract: water cooled Chiller Thyristor 12kV 10 kA fuji thyristor SF1154 SPT400 74382 corona treatment circuit military solid state pressure switch Chiller
Contextual Info: APPLICATION NOTES ASSEMBLING 125mm THYRISTORS FOR PULSE POWER APPLICATIONS 1. BACKGROUND 1.1 Defining Pulse Power Applications Pulse power involves the storage of energy until it is released at very high power levels. Dethlefsen [1] has bracketed the requirements for suitable solid state power switches as falling within the following envelope:

alcoa electrical joint compound

Abstract: GE-SPCO DIODE General Electric A740L DIODE 1334 LM 61WK A740 A750 A780 A750 diode
Contextual Info: G E CO/ S T A T I C PUR CMPNT GESPCO Static Power Component Operation 34E ì> B 3Ô7M5Ô4 G0001E4 *G ESP P G 5.040 6/9/89 A740 H i g h Po w e r A750 53mm SILICON R E C T I FF II EE R DIODES Ip AV o f 150Û-2400A V r r m o f 1200-4200V A780 T-0(-7~ 3 The General Electric A740, A750 and A780 Reverse Blocking