S813 Search Results

block diagram of fingerprint door security

Abstract: fingerprint i2c block diagram of fingerprint sensor fingerprint sensor specification sweep fingerprint sensor finger print security "Fingerprint Sensor" LQFP-100 S8132 diagram of fingerprint sensor
Contextual Info: An IC Design Company 5F-14, No.12, Lane 609, Chung Hsin Rd., Sec.5, San Chung City, Taipei Hsien, Taiwan SongRock Tel. +886 2 2278 2001 +886 2 2278 4815 Fax +886 2 2999 5349 E-MAIL: service@songrock.com.tw TechnologyCorp. S8132 FINGERPRINT IDENTIFICATION IC

8254aa

Abstract: capacitor NED je8 S-8353A33MC-IQS-T2 S-8254 battery c2u G83 PNP Transistor b9d s2914 S-8355M50MC-MDJ-T2 AVR 8335 M6M80041
Contextual Info: Network Components Business Unit CMOS IC Product Catalogue 2002-2003 October 2002 SII offers data sheets on the Internet. On SII-IC.COM, SII offers data sheets which summarize the specifications of each IC. For the latest information, access the following WEB site.

Contextual Info: S8130 Semiconductor Corporation Multi-Standard Infrared Transceiver Features General Description • Adds IR port to standard UART • IrDA, HPSIR, ASK CW & TV remote compatible • 1200bps to 115kbps data rate • Programmable Tx LED power • Programmable Rx threshold level

Contextual Info: IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 49 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement

"Temperature Switch"

Abstract: 8130A FN008-A S-8130ACAFN-MACT2G S-8130ACXFN-XXXT2G
Contextual Info: Rev.2.1_00 TEMPERATURE SWITCH IC WITH LATCH S-8130AC Series The S-8130AC is a temperature switch with a latch function having a built-in semiconductor temperature sensor. The output signal is inverted when the temperature is detected, and latched until a reset

IRFP460LC

Abstract: SiHFP460LC IRFP460LCP
Contextual Info: IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 49 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement

Contextual Info: COPAL ELECTRONICS ROTARY CODED SWITCHES S-8000 INTERNAL STRUCTURE RoHS compliant ① ③ ② ⑦ ④ ⑤ ⑥ Part name •FEATURES ● RoHS compliant ● 3 bits 8 positions type ● Protection against dust and washable after soldering ● DIP-pin configuration: 2.54 mm pitch

IRLL110

Abstract: IRLL110PBF IRLL110TRPBF siliconix sot-223 marking
Contextual Info: IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface Mount Available in Tape and Reel

gate drive for mosfet irfz44

Abstract: IRFZ44 IRFZ44 equivalent IRFZ44 DATASHEET IRFZ44 mosfet IRFZ44 data IRFZ44 mosfet switching circuit application irfz44 IRFZ44PBF IRFZ44 parallel
Contextual Info: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements Qgd (nC) Configuration

IRFZ34 Datasheet

Abstract: irfz34 SiHFZ34 SiHFZ34-E3 irfz34 mosfets
Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration

SiHFU430A

Abstract: IRFR430A IRFU430A SiHFR430A SiHFR430A-E3 4.5V TO 100V INPUT REGULATOR
Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 1.7 Qg (Max.) (nC) 24 Qgs (nC) 6.5 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

IRFL110 vishay

Abstract: irfl110pbf IRFL110 SiHFL110 SiHFL110-E3 siliconix sot-223 marking IRFL110, Siliconix
Contextual Info: IRFL110, SiHFL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

IRLD110

Abstract: IRLD110PBF
Contextual Info: IRLD110, SiHLD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.54 Qg (Max.) (nC) 6.1 • For Automatic Insertion Qgs (nC) 2.6 • End Stackable 3.3 • Logic-Level Gate Drive

IRLR110

Abstract: IRLU110
Contextual Info: IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Available • Repetitive Avalanche Rated 0.54 Qg (Max.) (nC) 6.1 • Surface Mount (IRLR110/SiHLR110)

IRFL214

Abstract: SiHFL214 SiHFL214-E3
Contextual Info: IRFL214, SiHFL214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

IRFPS35N50L

Abstract: SiHFPS35N50L SiHFPS35N50L-E3
Contextual Info: IRFPS35N50L, SiHFPS35N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 230 Qgs (nC) 65 Qgd (nC) 110 Configuration

IRFRC20

Abstract: IRFRC20PBF irfuc20 transistor IRFRC20 SiHFRC20 SiHFRC20-E3 SiHFUC20 RthJA
Contextual Info: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) IPAK (TO-251) • • • • • • • •

IRFR9110

Abstract: IRFU9110 SiHFR9110 SiHFR9110-E3
Contextual Info: IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DPAK (TO-252) IPAK

IRFPE40 equivalent

Abstract: IRFPE40 IRFPE450
Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 2.0 Available Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching

IRFZ14PBF

Abstract: IRFZ14 SiHFZ14 SiHFZ14-E3
Contextual Info: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration

LCD display jhd

Abstract: jhd 16a S-1380 JHD LCD S-81250SGY s-7116A TRANSISTOR PNP BA RT SOT 89 S-87050 M6M80041 notebook Universal LCD inverter AVT
Contextual Info: CMOS IC Product Catalog Components Headquarters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module Please visit our HomePage for more new information. <http://www.sii.co.jp/compo> Contents

Contextual Info: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

Contextual Info: IRFI9520G, SiHFI9520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature

irll110

Abstract: SiHLL110-E3 SiHLL110
Contextual Info: IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface Mount Available in Tape and Reel