SIHFL214 Search Results
SIHFL214 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
SiHFL214
Abstract: siliconix sot-223 marking IRFL214 SiHFL214-E3
|
Original |
IRFL214, SiHFL214 2002/95/EC OT-223 OT-223 18-Jul-08 siliconix sot-223 marking IRFL214 SiHFL214-E3 | |
IRFL214
Abstract: SiHFL214 SiHFL214-E3
|
Original |
IRFL214, SiHFL214 OT-223 OT-223 18-Jul-08 IRFL214 SiHFL214-E3 | |
IRFL214
Abstract: SiHFL214 SiHFL214-E3 SiHFL214-GE3
|
Original |
IRFL214, SiHFL214 2002/95/EC OT-223 OT-223 11-Mar-11 IRFL214 SiHFL214-E3 SiHFL214-GE3 | |
Contextual Info: IRFL214, SiHFL214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching |
Original |
IRFL214, SiHFL214 2002/95/EC OT-223 OT-223 18-Jul-08 | |
Contextual Info: IRFL214, SiHFL214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D Third generation power MOSFETs from Vishay provide the |
Original |
IRFL214, SiHFL214 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: IRFL214, SiHFL214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching |
Original |
IRFL214, SiHFL214 2002/95/EC OT-223 OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: IRFL214, SiHFL214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating |
Original |
IRFL214, SiHFL214 OT-223 OT-223 12-Mar-07 | |
Contextual Info: IRFL214_RC, SiHFL214_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
Original |
IRFL214 SiHFL214 AN609, CONFIGURAay-10 31-May-10 | |
Contextual Info: IRFL214, SiHFL214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D Third generation power MOSFETs from Vishay provide the |
Original |
IRFL214, SiHFL214 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: IRFL214, SiHFL214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching |
Original |
IRFL214, SiHFL214 2002/95/EC OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: IRFL214, SiHFL214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching |
Original |
IRFL214, SiHFL214 2002/95/EC OT-223 OT-223 11-Mar-11 |