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    Vishay Intertechnologies

    Vishay Intertechnologies SIHFZ34S-GE3

    Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 120A; 88W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHFZ34S-GE3 1
    • 1 $0.83
    • 10 $0.75
    • 100 $0.59
    • 1000 $0.55
    • 10000 $0.55
    		Get Quote

    SIHFZ34 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irfz34sihfz342002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    Contextual Info: SiHFZ34S_RC, SiHFZ34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		sihfz34ssihfz34lan6094962m+49514m4372m1122m6484m PDF

    IRFZ34 Datasheet

    Abstract: irfz34 SiHFZ34 SiHFZ34-E3 irfz34 mosfets
    Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irfz34sihfz34o-22018-jul-08+3irfz34 datasheetsihfz34-e3irfz34 mosfets PDF

    Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.050 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single D2PAK (TO-262) G G D


    Original     		irfz34sirfz34lsihfz34ssihfz34l+3o-2622002/95/ec2011/65/eu PDF

    Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature


    Original     		irfz34sirfz34lsihfz34ssihfz34l+22002/95/ec2011/65/eu PDF

    irfz34

    Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irfz34sihfz342002/95/eco-220ab+32011/65/eujs709a02-oct-12 PDF

    irfz34

    Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irfz34sihfz34o-22012-mar-07 PDF

    Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irfz34sihfz342002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature


    Original     		irfz34sirfz34lsihfz34ssihfz34l+42002/95/eco-262o-26311-mar-11 PDF

    Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature


    Original     		irfz34sirfz34lsihfz34ssihfz34l+22002/95/ec11-mar-11 PDF

    IRFZ34SPBF

    Abstract: irfz IRFZ34L IRFZ34S SiHFZ34S SiHFZ34S-E3
    Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.050 Qg (Max.) (nC) 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single G COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		irfz34sirfz34lsihfz34ssihfz34l+418-jul-08irfz34spbfirfzsihfz34s-e3 PDF

    IRFZ34L

    Abstract: IRFZ34S SiHFZ34S
    Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature


    Original     		irfz34sirfz34lsihfz34ssihfz34l+22002/95/ec11-mar-11 PDF

    AN609

    Abstract: IRFZ34 SiHFZ34 n mosfet pspice parameters
    Contextual Info: IRFZ34_RC, SiHFZ34_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irfz34sihfz34an6094962m+79514m4372m1122m6484m8577m7296mn mosfet pspice parameters PDF

    IRFZ34SPBF

    Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.050 Qg (Max.) (nC) 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single G COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		irfz34sirfz34lsihfz34ssihfz34l+5irfz34l/sihfz34lo-262o-26312-mar-07irfz34spbf PDF

    Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature


    Original     		irfz34sirfz34lsihfz34ssihfz34l+42002/95/eco-262o-2632011/65/eu PDF

    Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irfz34sihfz342002/95/eco-220ab+111-mar-11 PDF

    Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature


    Original     		irfz34sirfz34lsihfz34ssihfz34l+42002/95/eco-262o-26318-jul-08 PDF

    irfz34

    Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irfz34sihfz342002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    SiHFZ34S

    Abstract: SiHFZ34S-E3 IRFZ34L IRFZ34S IRFZ34SPBF
    Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.050 Qg (Max.) (nC) 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single G G D S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		irfz34sirfz34lsihfz34ssihfz34l+318-jul-08sihfz34s-e3irfz34spbf PDF

    Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irfz34sihfz342002/95/eco-220ab+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irfz34sihfz342002/95/eco-220ab+32011/65/eujs709a02-oct-12 PDF