IRFZ34L Search Results

AN-994

Abstract: IRFZ34 IRFZ34L IRFZ34S
Contextual Info: PD - 9.892A IRFZ34S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ34S Low-profile through-hole (IRFZ34L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description Third Generation HEXFETs from International Rectifier

Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.050 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single D2PAK (TO-262) G G D

Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature

IRFZ34 mosfet

Contextual Info: PD - 9.892A International IQ R Rectifier IRFZ34S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRFZ34S Low-profile through-hole (IRFZ34L) 175°C Operating Temperature Fast Switching V dss = 60 V R d s (oh) = 0.050Î2 lD = 30 A Description

Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature

Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature

IRFZ34SPBF

Abstract: irfz IRFZ34L IRFZ34S SiHFZ34S SiHFZ34S-E3
Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.050 Qg (Max.) (nC) 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single G COMPLIANT Third generation Power MOSFETs from Vishay utilize

IRFZ34L

Abstract: IRFZ34S SiHFZ34S
Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature

IRFZ34SPBF

Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.050 Qg (Max.) (nC) 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single G COMPLIANT Third generation Power MOSFETs from Vishay utilize

Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature

Contextual Info: PD - 9.892A IRFZ34S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ34S Low-profile through-hole (IRFZ34L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description Third Generation HEXFETs from International Rectifier

Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature

AN-994

Abstract: IRFZ34 IRFZ34L IRFZ34S
Contextual Info: PD - 9.892A IRFZ34S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ34S Low-profile through-hole (IRFZ34L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description Third Generation HEXFETs from International Rectifier

SiHFZ34S

Abstract: SiHFZ34S-E3 IRFZ34L IRFZ34S IRFZ34SPBF
Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.050 Qg (Max.) (nC) 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single G G D S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay utilize

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK