S812 Search Results

AOC-12

Contextual Info: Q S812880 High-Speed CMOS 128KX8 SRAM Q Q S812880 ADVAN CE INFO RM ATIO N F E A TU R E S /B E N E FIT S • • • • • • Equal access and cycle times 20ns/25ns/30 ns Commercial 25ns/30 ns Military Common I/O with output enable Military product compliant to MIL-STD-883

Contextual Info: Q S812880 High-Speed CMOS 128Kx8 SRAM Q Q S 812880 ADVANCE INFORMATION FEATURES/BENEFITS Equal access and cycle times 20ns/25ns/30 ns Commercial 25ns/30 ns Military Common I/O with output enable Military product compliant to MIL-STD-883 High performance QCMOS technology

mosfet k 2038

Abstract: IRFP450A
Contextual Info: IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 64 Qgs (nC) 16 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement

IRFIBC40

Abstract: TO-220 FULLPAK Package SiHFIBC40G
Contextual Info: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating

srfh 1001

Contextual Info: REV. 4.0 FS501-DS-40_EN Datasheet FS501 18-bit ADC with two low noise OPAMPs DEC. 2006 FS501 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

Contextual Info: CXD2931R 1 chip GPS LSI Description The CXD2931R is a dedicated LSI for the GPS Global Positioning System satellite-based position measurement system. This LSI contains a 32-bit RISC CPU, 2M-bit MASK ROM, RAM, UART, timer, and others. This LSI, used together with the RF LSI (CXA1951AQ),

3202 a ic

Abstract: C5LT2
Contextual Info: S-812C Series HIGH OPERATING VOLTAGE CMOS VOLTAGE REGULATOR www.sii-ic.com Rev.6.1_00 Seiko Instruments Inc., 2001-2011 The S-812C Series is a high-withstand voltage regulator IC which is developed by using the CMOS technology. This IC is suitable for applications which require withstand because its maximum voltage for operation is as high

Si6963BDQ

Contextual Info: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2

S-8120AMP

Contextual Info: Contents Features. 1 Block Diagram. 1 Pin Assignment . 1 Dimensions . 2

8254aa

Abstract: capacitor NED je8 S-8353A33MC-IQS-T2 S-8254 battery c2u G83 PNP Transistor b9d s2914 S-8355M50MC-MDJ-T2 AVR 8335 M6M80041
Contextual Info: Network Components Business Unit CMOS IC Product Catalogue 2002-2003 October 2002 SII offers data sheets on the Internet. On SII-IC.COM, SII offers data sheets which summarize the specifications of each IC. For the latest information, access the following WEB site.

Contextual Info: IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement

Contextual Info: 5V, 1A Linear Regulator w ith RESET and ENA BLE Description Features w h e n th e IC is p o w e rin g u p o r w h e n ­ ev er th e o u tp u t v o lta g e falls o u t of reg ­ u latio n . The RESET s ig nal is valid d o w n to V0UT=1V. T he CS-8121 is a 5V, 1A p re c isio n lin ear

IRFIBC40

Abstract: IRFIBC40GLC SiHFIBC40GLC SiHFIBC40GLC-E3 SiHFIBC40G
Contextual Info: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

mc3842

Abstract: LT336 lt431 MOTOROLA SEMICONDUCTOR mc34063 MC34063 Application Notes AMS1117 motorola LM317 mic520x lt185 AS3842
Contextual Info: Manufacturer AMS National Semiconductor LP2950 LP2950/AMS2950 LP2951 LP2951/AMS2951 LP2954 AMS2954 LP2980/81/82 AMS3102 LP2985 AMS3102 LM1004 AMS1004 LM285/385 AMS285/385 LM2930 AMS2930 LM2931 AMS2931 LM2936 AMS116 LM35 AMS35 LM336 AMS336 LM3940/2940 AMS2911

S-81243SGUP-DIC-X

Abstract: S-81222SGY-X 42V20 S-81222SG-QV-X S-81253SG-IJ-X 315mV S-81220SGUP-DQS-X S-81248SG-IF-X
Contextual Info: POWER SUPPLY HIGH-PRECISION VOLTAGE REGULATOR A positive type voltage regulator family of devices, with very highly precise output voltage. The low power consumption feature allows the user to extend battery life and improve components density on the PCB. They are available in TO92, SOT-89-3 and SOT-23-5 packages in the operating temperature range of -40 to +85 degree C.

Contextual Info: New Product Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 27.2 0.006 at VGS = 4.5 V 23.5 VDS (V) 40 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

S-8120B

Abstract: SC82AB
Contextual Info: SENSOR SENSOR LINE-UP P W af er SO in 8p in DI P -3 8p T23 SO SC -8 2 AB Package Page S-8110A 42 S-8120A 42 S-8110B 42 S-8120B 42 Receiver IC for infrared Remote Controller S-8270A 43 Linear image sensor IC for "contact image sensor" S-8603AWI 43 S-8631AWI

Contextual Info: Si6955ADQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.080 at VGS = - 10 V ± 2.9 0.135 at VGS = - 4.5 V ± 2.2 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 G1 TSSOP-8 D1

Contextual Info: Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.6 0.040 at VGS = - 2.5 V - 3.8 RoHS* 0.055 at VGS = - 1.8 V - 3.0 COMPLIANT

IRFI644G

Abstract: SiHFI644G SiHFI644G-E3 S-81290-Rev
Contextual Info: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

IRFP31N50L

Abstract: irfp31n50
Contextual Info: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive

part marking ab

Abstract: IRLR120 IRLU120 SiHLR120 SiHLR120-E3
Contextual Info: IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.27 Qg (Max.) (nC) 12 • Surface Mount (IRLR120/SiHLR120) Qgs (nC) 3.0

SiHFP22N50A

Abstract: IRFP22N50A marking M3 IRFP22N50
Contextual Info: IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.23 Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 52 Configuration • Improved Gate, Avalanche and Dynamic dV/dt