S806 Search Results

s8065j

Contextual Info: Part: S8065J Series: Teccor SCR Devices Technology:SCRs PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through hole Critical Rate-of-rise of On-state Current di/dt A/µs 200 Critical rate-of-rise of applied forward voltage dv/dt @ 100°C V/µs

Contextual Info: 1/12 2-zone LightLight-Modulation PhotoIC for object detection Technical notes S8030,S8064,S8064-10 Preliminary SSD 2000. 7. 5 1. Range finding of an object independent of the reflectance or the color The 2-zone Light-Modulation PhotoIC was developed as a range-finding sensor. Conventional

dual photodiode

Abstract: photodiode "far infrared" S8030 KPIC1028E01 S8064 SE-171
Contextual Info: PHOTO IC Photo IC for rangefinder NEW S8030, S8064 Photo IC designed for near/far distance detection S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance near or far to an object at a certain

photodiode "far infrared"

Abstract: dual photodiode S8030 KPIC1028E01 S8064 SE-171 S-8030
Contextual Info: PHOTO IC Photo IC for rangefinder S8030, S8064 Photo IC designed for near/far distance detection S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance near or far to an object at a certain

S8065K

Contextual Info: Part: S8065K Series: Teccor SCR Devices Technology:SCRs PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through hole Critical Rate-of-rise of On-state Current di/dt A/µs 200 Critical rate-of-rise of applied forward voltage dv/dt @ 100°C V/µs

Si2315BDS-T1-E3

Contextual Info: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*

S6025

Abstract: S1055M S8025 S4008 S0525 S4025 SCR S1055m S8055R S1070W S6020
Contextual Info: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-92 TO-218AC TO-202AB TO-218X A THERMOTAB TO-220AB K G SCRs 1 – 70 Amps 6 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more

Si3407DV

Contextual Info: New Product Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V a - 8.0 • • • • Qg (Typ.) 21 nC TrenchFET Power MOSFET PWM Optimized

Si2304BDS

Abstract: Si2304BDS-T1-E3
Contextual Info: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View

SUM75N15-18P-E3

Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

Si6463BDQ

Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT

SC-89

Abstract: Si1026X
Contextual Info: Si1026X Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 • Halogen-free Option Available • Low On-Resistance: 1.40 Ω RoHS • Low Threshold: 2 V (typ.)

72511

Abstract: Si6433BDQ
Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7

Contextual Info: Si6441DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.015 at VGS = - 10 V -8 0.024 at VGS = - 4.5 V - 6.4 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS COMPLIANT • Battery Switch

S4020L

Abstract: thyristor k 202 s6015l S6010 SCR S6025L s6065k E617 thyristor T 218 N S2006L S2006V
Contextual Info: s ge ka * L. U. ED Z NI G 39 CO 716 E R #E ed ct le Se c Pa Fi le E6 TO-263 D 2 Pak TO-92 *TO-218 TO-252 D-Pak TO-202 *TO-218X 3-lead Compak *TO-220 TO-251 V-Pak A K G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,

S5500G

Abstract: S-8-08FR S-8R-06FR S5103 S5166 S5500D S5102 S5104 S-8R-01FR S5277D
Contextual Info: - m % S5102 S5103 S5104 S5166 S5277B S5277D S5277G S5277J S5277L S5277N S529SB S5295D S5295G S5295J S5500B S5500D S5500G S5566B S5566G S5566J S5566N S5688B S5688G S5688J S5688N S-8 -01 S-8-01FR S -8 -02 S-8-02FR S -8 -04 S-8-04FR S -8 -06 S-8-06FR S-8 -08

Si2306BDS

Abstract: Si2306BDS-T1-E3 Si2306BDS-T1-GE3
Contextual Info: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0

tsc4429

Abstract: TSC7660 TSC7107 TSC7106 TSC7109 TSC7117 TSC1426 TSC7650 tsc4427 lt1174
Contextual Info: Code Key: PU – PP – FE – SP – Plug-In Upgrade Pin-for-Pin Compatible Functional Equivalent Similar Part AMCC MAXIM S3005 S3006 S3017 S3023 S3024 S3025 S3026 S3027 S3028B S3033 S3040 S3043 S3044 S3047 S3049 S3050 MAX3690 MAX3680 MAX3690 MAX3675 MAX3675

MOSFET TSSOP-8

Abstract: SI6410DQ
Contextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D

e616

Abstract: SK040R ES35A SK025N S4010R
Contextual Info: s ge ka * L. U. ED Z NI G 39 CO 716 E R #E ed ct le Se c Pa Fi le E6 TO-263 D 2 Pak TO-92 *TO-218 TO-252 D-Pak TO-202 *TO-218X 3-lead Compak *TO-220 TO-251 V-Pak A K G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,

1A20A

Abstract: teccor thyristor s8015l e526 E521 S2008L S4010R
Contextual Info: * ess* D aagge ZEED k c k IIZ Paac N d P GN 9 teted OOG166339 c leec ECC 771 SSeel . RRE ##EE L . iliele U.L FF E6 U TO-263 D 2 Pak TO-92 TO-218 TO-252 D-Pak TO-202 TO-218X A 3-Leaded Surface Mount Compak K TO-220 TO-251 V-Pak G SCRs 1 A to 70 A E5 General Description

teccor thyristor s4015l

Abstract: thyristor S6065K SK055R S8040N thyristor 325 V 8A ,THYRISTOR s2065j s401e Thyristor thyristor S8020L SK025N S4010R
Contextual Info: l Se ec ag * es ED Z NI G 39 CO 716 E R #E te L. U. k ac d P le Fi E6 TO-263 D 2 Pak TO-92 TO-218 TO-252 D-Pak TO-202 TO-218X 3-Leaded Surface Mount Compak TO-220 MT2 MT1 TO-251 V-Pak G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,

SI2306BDS-T1-E3

Abstract: Si2306BDS-T1-GE3 SI2306 Si2306BDS
Contextual Info: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0

Si1056X

Abstract: SC-89
Contextual Info: Si1056X Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.089 at VGS = 4.5 V 1.32 0.098 at VGS = 2.5 V 1.26 0.121 at VGS = 1.8 V Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested