S8064 Search Results

Contextual Info: 1/12 2-zone LightLight-Modulation PhotoIC for object detection Technical notes S8030,S8064,S8064-10 Preliminary SSD 2000. 7. 5 1. Range finding of an object independent of the reflectance or the color The 2-zone Light-Modulation PhotoIC was developed as a range-finding sensor. Conventional

dual photodiode

Abstract: photodiode "far infrared" S8030 KPIC1028E01 S8064 SE-171
Contextual Info: PHOTO IC Photo IC for rangefinder NEW S8030, S8064 Photo IC designed for near/far distance detection S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance near or far to an object at a certain

photodiode "far infrared"

Abstract: dual photodiode S8030 KPIC1028E01 S8064 SE-171 S-8030
Contextual Info: PHOTO IC Photo IC for rangefinder S8030, S8064 Photo IC designed for near/far distance detection S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance near or far to an object at a certain

Si2315BDS-T1-E3

Contextual Info: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*

Si2304BDS

Abstract: Si2304BDS-T1-E3
Contextual Info: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View

SC-89

Abstract: Si1026X
Contextual Info: Si1026X Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 • Halogen-free Option Available • Low On-Resistance: 1.40 Ω RoHS • Low Threshold: 2 V (typ.)

Si2306BDS

Abstract: Si2306BDS-T1-E3 Si2306BDS-T1-GE3
Contextual Info: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0

SI2306BDS-T1-E3

Abstract: Si2306BDS-T1-GE3 SI2306 Si2306BDS
Contextual Info: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0

Si1056X

Abstract: SC-89
Contextual Info: Si1056X Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.089 at VGS = 4.5 V 1.32 0.098 at VGS = 2.5 V 1.26 0.121 at VGS = 1.8 V Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested

SI1050X-T1

Abstract: SC-89 Si1050X Si1050
Contextual Info: Si1050X Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 Qg (Typ.) 1.23 0.120 at VGS = 1.5 V 0.7 RoHS COMPLIANT 7.1 0.102 at VGS = 1.8 V • Halogen-free Option Available

SC-89

Abstract: Si1023X Si1023X-T1-E3
Contextual Info: Si1023X Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 • Halogen-free Option Available RDS(on) (Ω) ID (mA) 1.2 at VGS = - 4.5 V - 350 • TrenchFET Power MOSFET: 1.8 V Rated 1.6 at VGS = - 2.5 V - 300 • Very Small Footprint

Contextual Info: Si1035X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel RDS(on) (Ω) ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V - 150 12 at VGS = - 2.5 V

sC89-6

Contextual Info: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V RDS(on) (Ω) ID (A) 0.625 at VIN = 4.5 V ± 0.43 1.8 to 8 0.890 at VIN = 2.5 V ± 0.36 1.25 at VIN = 1.8 V ± 0.3 Si1040X 4 2, 3 S2 Halogen-free Option Available TrenchFET Power MOSFET

si2316ds-t1-e3

Contextual Info: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET Power MOSFET Pb-free Available RoHS* APPLICATIONS

S8060

Abstract: S8064B
Contextual Info: Omnidirectional Antennas for Data Communications 12 ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ 800/900 MHz. Omnidirectional Antennas F Y I Antenna Selection Criteria Before you can make an informed antenna selection, you must know

Contextual Info: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0

Contextual Info: Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.5 -8 0.072 at VGS = - 2.5 V - 2.8 0.120 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available • TrenchFET Power MOSFET

Contextual Info: Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.5 -8 0.072 at VGS = - 2.5 V - 2.8 0.120 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available • TrenchFET Power MOSFET

Contextual Info: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)

Si2303BDS

Abstract: Si2303BDS-T1 Si2303BDS-T1-E3
Contextual Info: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)

74285

Abstract: SI1073X
Contextual Info: New Product Si1073X Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*

SI1024X-T1-GE3

Abstract: Si1024X-T1-E3 SC-89 Si1024X S8064
Contextual Info: Si1024X Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free Option Available RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 • TrenchFET Power MOSFET: 1.8 V Rated 0.85 at VGS = 2.5 V 500 • Very Small Footprint

SC-89

Abstract: Si1029X
Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •