SI2303BDS Search Results

Si2303BDS-T1-E3

Abstract: Si2303CDS-T1-E3 Si2303BDS Si2303CDS Si2303BDS-T1
Contextual Info: Specification Comparison Vishay Siliconix Si2303CDS vs. Si2303BDS Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2303CDS-T1-E3 replaces Si2303BDS-T1-E3 Si2303CDS-T1-E3 replaces Si2303BDS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Contextual Info: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)

AN609

Abstract: Si2303BDS
Contextual Info: Si2303BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si2303BDS

Abstract: Si2303BDS-T1 Si2303BDS-T1-E3
Contextual Info: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)

Si2303BDS

Abstract: Si2303BDS-T1 Si2303BDS-T1-E3 L3 MARKING CODE
Contextual Info: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)

Si2303BDS

Contextual Info: SPICE Device Model Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2303DS-T1

Abstract: Si2303DS Si2303BDS Si2303BDS-T1 Si2303BDS-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si2303BDS vs. Si2303DS Description: P-Channel, 30 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2303BDS-T1 Replaces Si2303DS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free version) Replaces Si2303DS-T1

70318

Abstract: Si2303BDS Si2303BDS SPICE Device Model
Contextual Info: SPICE Device Model Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2303BDS

Contextual Info: Si2303BDS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.200 @ VGS = -10 V -1.4 0.380 @ VGS = -4.5 V -1.0 VDS (V) -30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303BDS (L3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si2303BDS

Abstract: Si2303BDS-T1 Si2303BDS-T1-E3
Contextual Info: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)

Contextual Info: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)

Contextual Info: Si2303BDS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.200 @ VGS = -10 V -1.4 0.380 @ VGS = -4.5 V -1.0 VDS (V) -30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303BDS (L3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si2303BDS

Abstract: Si2303BDS-T1 Si2303BDS-T1-E3 L3 marking Si2303BDS SPICE Device Model
Contextual Info: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)

260pF

Abstract: Si2303ADS Si2303BDS Si2303BDS-T1 Si2303BDS-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si2303BDS vs. Si2303ADS Description: P-Channel, 30 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2303BDS-T1 Replaces Si2303ADS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free version) Replaces Si2303ADS-T1

Si2303BDS

Contextual Info: SPICE Device Model Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

L3 MARKING CODE

Contextual Info: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)

Contextual Info: LTC3706 Secondary-Side Synchronous Forward Controller with PolyPhase Capability DESCRIPTION FEATURES n n n n n n n n n n n n The LTC 3706 is a PolyPhase capable secondary-side controller for synchronous forward converters. When used in conjunction with the LTC3705 gate driver and primaryside controller, the part creates a complete isolated power

SiI3811

Abstract: AE1421 Mitsubishi DA U31 sc2625 NTC SD-15 DELL DA-2 power supply diagram SSLVC08APWR-GP Wistron Corporation ST470U2D5VDM ICS954226AGLF
Contextual Info: Barbados Block Diagram Intel Mobile CPU Clock Generator ICS954226 /CV140PAG 3 Dothan: 1.6BGHz/1.73GHz 1.87GHz/2AGHz/2.1GHz Celeron:1.4GHz/1.5GHz/1.6GHz 4,5 Project code:91.4C401.001 PCB P/N :04242 REVISION :SD System DC/DC 400 /533MHz 4.3GB/s HOST BUS 200-PIN DDR2 SODIMM

PDTA144E

Abstract: lqfp-176 pcb LAYOUT VARTA L2 400 max1909 915gm c838 transistor transistor C730 foxconn transistor c708 transistor C715 Transistor HA17
Contextual Info: 1 A B C 2 3 4 5 6 7 8 Schematics Page Index Title / Revision / Change Date Page Title of Schematics Page Title of Schematics Page Rev. Date Page 01 Title 0.2 050523 26 SCREW HOLE & PAD 02 BLOCK DIAGRAM 0.2 050523 27 MINI-PCI 03 Dothan(HOST BUS) 1/2 0.2 050523 28 LAN (82562ET)

LDR 90

Abstract: MLP44-16 Si2303BDS Si7456DP Si7848DP TSSOP-16 SiP11206
Contextual Info: SiP11206 Vishay Siliconix Half-Bridge Controller with Primary MOSFET Drivers for Intermediate Bus Converters DESCRIPTION FEATURES SiP11206 is a controller for the primary side of a half-bridge intermediate bus converter IBC . It is ideally suited for isolated applications such as telecom, data communications

CDM20600

Abstract: MAX9611 MAX9611AUB 127NC xtal GRM21BR61C106K MAX9612 MAX9612AUB GRM31CR72A105K
Contextual Info: 19-5619; Rev 0; 11/10 MAX9611 Evaluation Kit Features The MAX9611 evaluation kit EV kit is an assembled and tested PCB used to evaluate the MAX9611 high-side current-sense amplifier with an integrated 12-bit ADC and a gain block that can be configured either as an op

Contextual Info: Product is End of Life 3/2014 SiP11205 Vishay Siliconix Feed-Forward Controller with Primary MOSFET Drivers for Intermediate Bus Converters DESCRIPTION FEATURES SiP11205 is a feed-forward controller for the primary side of a half-bridge intermediate bus converter IBC . It is ideally

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

80385

Contextual Info: SiP11206 Vishay Siliconix Half-Bridge Controller with Primary MOSFET Drivers for Intermediate Bus Converters DESCRIPTION FEATURES SiP11206 is a controller for the primary side of a half-bridge intermediate bus converter IBC . It is ideally suited for isolated applications such as telecom, data communications