S5145 Search Results

Contextual Info: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 FEATURES rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 D TrenchFETr Power MOSFETs S SO-8 S 1

Contextual Info: ILX531A 5150-pixel CCD Linear Sensor B/W Description The ILX531A is a reduction type CCD linear sensor developed for high resolution copiers. This sensor reads A3-size documents at a density of 400 DPI, and A4-size documents at a density of 600 DPI at high speed.

ILX531A

Abstract: S5145 S5150 high frequency linear cmos IMAGE SENSOR S5149
Contextual Info: ILX531A 5150-pixel CCD Linear Sensor B/W For the availability of this product, please contact the sales office. Description The ILX531A is a reduction type CCD linear sensor developed for high resolution copiers. This sensor reads A3-size documents at a density of 400 DPI,

ccd Linear Sensor

Abstract: ILX510 S5145 S5150 S5149
Contextual Info: ILX510 5150-pixel CCD Linear Sensor B/W For the availability of this product, please contact the sales office. Description The ILX510 is a reduction type CCD linear sensor developed for high resolution copiers. This sensor reads A3-size documents at a density of 400 DPI,

SI4800BDY-T1-E3

Contextual Info: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.030 @ VGS = 4.5 V 7 D TrenchFETr Power MOSFET D High-Efficient PWM Optimized D 100% UIS Tested SO-8 S S S

Contextual Info: Si4810BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D D D D TrenchFETr Power MOSFETS Fast Switching Speed Low Gate Charge

Si7392DP

Abstract: Si7392DP-T1 pakr Si7392DP-T1-E3
Contextual Info: Si7392DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETr FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.00975 @ VGS = 10 V 15 0.01375 @ VGS = 4.5 V 13 D Extremely Low Qgd WFET Techno– logy for Low Switching Losses RoHS COMPLIANT D TrenchFETr Power MOSFET

Si4810BDY-T1-E3

Abstract: Si4810BDY Si4810BDY-T1
Contextual Info: Si4810BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D D D D TrenchFETr Power MOSFETS Fast Switching Speed Low Gate Charge

CCD linear 22pin

Abstract: diode D83 S5149 sony linear ccd S5150 sony CCD LINEAR IMAGE SENSOR transistor D94 ILX531A S5145
Contextual Info: ILX531A 5150-pixel CCD Linear Sensor B/W Description The ILX531A is a reduction type CCD linear sensor developed for high resolution copiers. This sensor reads A3-size documents at a density of 400 DPI, and A4-size documents at a density of 600 DPI at high speed.

Si4427DY

Abstract: Si4427DY-T1
Contextual Info: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 FEATURES rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 D TrenchFETr Power MOSFETs S SO-8 S 1

Si4431DY-T1

Contextual Info: Si4431DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –30 30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "5.8 0.070 @ VGS = –4.5 V "4.5 D TrenchFETr Power MOSFET D 100% UIS Tested S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View

Contextual Info: Si4431DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –30 30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "5.8 0.070 @ VGS = –4.5 V "4.5 D TrenchFETr Power MOSFET D 100% UIS Tested S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View

SI4800BDY-T1-E3

Abstract: Si4800BDY-T1 Si4800BDY
Contextual Info: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.030 @ VGS = 4.5 V 7 D TrenchFETr Power MOSFET D High-Efficient PWM Optimized D 100% UIS Tested SO-8 S S S

Si4892DY

Abstract: Si4892DY-T1
Contextual Info: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 12.4 0.020 @ VGS = 4.5 V 9.6 D D D D TrenchFETr Power MOSFET High Efficiency PWM Optimized 100% Rg Tested 100% UIS Tested RoHS COMPLIANT

S5149

Abstract: ILX510 S5145 S5150 S5147
Contextual Info: ILX510 5150-pixel CCD Linear Sensor B/W Description The ILX510 is a reduction type CCD linear sensor developed for high resolution copiers. This sensor reads A3-size documents at a density of 400 DPI, and A4-size documents at a density of 600 DPI at high speed.

Si3446DV

Abstract: Si3446DV-T1 SI3446DV-T1-E3
Contextual Info: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V 5.3 0.065 @ VGS = 2.5 V 4.4 D TrenchFETr Power MOSFET D 100% Rg Tested RoHS COMPLIANT (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6

SI4431DY-T1

Abstract: Si4431DY 70151
Contextual Info: Si4431DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –30 30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "5.8 0.070 @ VGS = –4.5 V "4.5 D TrenchFETr Power MOSFET D 100% UIS Tested S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View

5140 fet

Abstract: C458C spdt toggle switch application AS-5040 AS-5140C AS-5140M AS-5141C AS-5141M AS-5142C DG180
Contextual Info: y— ]/ax|n=ä\\ AS-5140/AS-5145 Family fejllfftnngisgnn High Level CMOS Analog Gates FEATURES G EN ER A L DESCRIPTION • T he AS-5140 Fam ily o f C M O S m o n o lith ic sw itches utilize s la tc h -fre e ju n c tio n isolated processing to b u ild the fastest sw itch e s now available. “ O FF” leak­

S5150

Abstract: ILX531A S5145
Contextual Info: ILX531A 5150-pixel CCD Linear Sensor B/W Description The ILX531A is a reduction type CCD linear sensor developed for high resolution copiers. This sensor reads A3-size documents at a density of 400 DPI, and A4-size documents at a density of 600 DPI at high speed.

Si3446DV-T1

Abstract: Si3446DV
Contextual Info: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V 5.3 0.065 @ VGS = 2.5 V 4.4 D TrenchFETr Power MOSFET D 100% Rg Tested RoHS COMPLIANT (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6

Contextual Info: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 12.4 0.020 @ VGS = 4.5 V 9.6 D D D D TrenchFETr Power MOSFET High Efficiency PWM Optimized 100% Rg Tested 100% UIS Tested RoHS COMPLIANT

Contextual Info: Si7392DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETr FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.00975 @ VGS = 10 V 15 0.01375 @ VGS = 4.5 V 13 D Extremely Low Qgd WFET Techno– logy for Low Switching Losses RoHS COMPLIANT D TrenchFETr Power MOSFET

Contextual Info: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V 5.3 0.065 @ VGS = 2.5 V 4.4 D TrenchFETr Power MOSFET D 100% Rg Tested RoHS COMPLIANT (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6