SI3446DV Search Results

FDC637AN

Abstract: marking CODE 62A general SSOT-6 CBVK741B019 F63TNR FDC633N SI3446DV
Contextual Info: FDC637AN April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored

Si3446DV

Contextual Info: Si3446DV N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V "5.3 0.065 @ VGS = 2.5 V "4.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Si3446DV

Contextual Info: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V "5.3 0.065 @ VGS = 2.5 V "4.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: FDC637AN April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored

Contextual Info: Tem ic Si3446DV Semiconductors N-Channel 2.5-V G-S Rated MOSFET Product Summary r DS(on) (£2) I d (A ) 0 .0 4 5 @ V Gs = 4 .5 V ± 5 .3 0 .0 6 5 @ V Gs = 2.5 ± 4 .4 V D S (V ) 20 V (1, 2, 5, 6) D O TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3 )G O 6 (4 )S •2.85 m m ■

Si3446DV

Abstract: Si3446DV-T1 SI3446DV-T1-E3
Contextual Info: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V 5.3 0.065 @ VGS = 2.5 V 4.4 D TrenchFETr Power MOSFET D 100% Rg Tested RoHS COMPLIANT (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6

70424

Abstract: MOSFET 1052 AN609 Si3446DV
Contextual Info: Si3446DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74288

Abstract: SI3446DV-T1-E3 Si3446DV Si3446DV-T1 Si3446ADV
Contextual Info: Specification Comparison Vishay Siliconix Si3446ADV vs. Si3446DV Description: Package: Pin Out: N-Channel, 20 V D-S MOSFET TSOP-6 Identical Part Number Replacements Si3446ADV-T1-E3 Replaces Si3446DV-T1-E3 Si3446ADV-T1-E3 Replaces Si3446DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Contextual Info: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.045 @ VGS = 4.5 V "5.3 0.065 @ VGS = 2.5 V "4.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 2.85 mm (3) G (4) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

FDC637AN

Abstract: SI3446DV
Contextual Info: FDC637AN April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored

Si3446DV-T1

Abstract: Si3446DV
Contextual Info: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V 5.3 0.065 @ VGS = 2.5 V 4.4 D TrenchFETr Power MOSFET D 100% Rg Tested RoHS COMPLIANT (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6

Contextual Info: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V "5.3 0.065 @ VGS = 2.5 V "4.4 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G

Contextual Info: Si3446DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.045 @ VGS = 4.5 V 5.3 0.065 @ VGS = 2.5 V 4.4 D TrenchFETr Power MOSFET D 100% Rg Tested RoHS COMPLIANT (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

diode 8a 600v

Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
Contextual Info: Fairchild New Product Highlights, #1, August 2001 Interface & Logic Optoelectronics Fairchild New Product Highlights Analog Discrete Power Switch for off-line power supply See page 2 The Latest Fairchild Innovations Contents Comprehensive New Product List

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

r9824

Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16

Q8031

Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

IRF5505

Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Contextual Info: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT

L7803

Abstract: 74LC125 HP C6602 AR2313 p66 apple U6301 SiL1362ACLU ZH510 b9718 L7206 1.2
Contextual Info: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 2 System Block Diagram MASTER MASTER 3 Power Block Diagram MASTER MASTER 38 39 4 Table Items MASTER 40 MASTER 5 FUNC TEST 1 OF 2 MASTER 41 MASTER 6 Power Conn / Alias MASTER

sil1162

Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM

ISL9504

Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS

SOT23-5 AE31

Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS

PP3V42G3H

Abstract: temperature controller CHB 402 manual I251 diode c3909 ar9350 PP3V42 R859 p66 apple temperature controller CHB 402 U6700
Contextual Info: 8 6 7 REV .csa Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM