SI4892DY Search Results

Contextual Info: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 12.4 0.020 at VGS = 4.5 V 9.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • High Efficiency PWM Optimized

Si4892DY

Abstract: Si4892DY-T1-E3 Si4892DY-T1-GE3
Contextual Info: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 12.4 0.020 at VGS = 4.5 V 9.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • High Efficiency PWM Optimized

Si4892DY

Contextual Info: Si4892DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 12.4 0.020 @ VGS = 4.5 V 9.6 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4892DY

Abstract: Si4892DY-T1
Contextual Info: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 12.4 0.020 @ VGS = 4.5 V 9.6 D D D D TrenchFETr Power MOSFET High Efficiency PWM Optimized 100% Rg Tested 100% UIS Tested RoHS COMPLIANT

Si4892DY

Contextual Info: SPICE Device Model Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4892DY

Abstract: Si4892DY-T1-E3 Si4892DY-T1-GE3
Contextual Info: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 12.4 0.020 at VGS = 4.5 V 9.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • High Efficiency PWM Optimized

Contextual Info: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 12.4 0.020 at VGS = 4.5 V 9.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • High Efficiency PWM Optimized

Si4892DY

Abstract: Si4892DY-T1
Contextual Info: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 12.4 0.020 @ VGS = 4.5 V 9.6 D D D D TrenchFETr Power MOSFET High Efficiency PWM Optimized 100% Rg Tested 100% UIS Tested RoHS COMPLIANT

Si4892DY

Contextual Info: Si4892DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 12.4 0.020 @ VGS = 4.5 V 9.6 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 12.4 0.020 @ VGS = 4.5 V 9.6 D D D D TrenchFETr Power MOSFET High Efficiency PWM Optimized 100% Rg Tested 100% UIS Tested RoHS COMPLIANT

Si4892DY

Contextual Info: SPICE Device Model Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74116

Abstract: AN609 Si4892DY 607-60
Contextual Info: Si4892DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 12.4 0.020 @ VGS = 4.5 V 9.6 D TrenchFETr Power MOSFET D High Efficiency PWM Optimized D 100% Rg Tested D D D D SO-8 S 1 8 D S 2

Si4892DY

Contextual Info: SPICE Device Model Si4892DY N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Si4892DY

Abstract: Si4892DY-T1
Contextual Info: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 12.4 0.020 @ VGS = 4.5 V 9.6 D TrenchFETr Power MOSFET D High Efficiency PWM Optimized D 100% Rg Tested D D D D SO-8 S 1 8 D S 2

Si4892DY

Contextual Info: SPICE Device Model Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 12.4 0.020 at VGS = 4.5 V 9.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • High Efficiency PWM Optimized

Contextual Info: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 12.4 0.020 @ VGS = 4.5 V 9.6 D D D D TrenchFETr Power MOSFET High Efficiency PWM Optimized 100% Rg Tested 100% UIS Tested RoHS COMPLIANT

Contextual Info: User's Guide SLVU318B – October 2009 – Revised August 2010 TPS23757EVM: Evaluation Module for TPS23757 This user’s guide describes the TPS23757 evaluation module TPS23757EVM . The TPS23757EVM contains evaluation and reference circuitry for the TPS23757. The TPS23757 contains a powered device

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

NV18

Abstract: isl6247 transistor SMD w26 Socket AM2 Compal Electronics SMD SOT23 A53 rt8101l p25 BTQ00 RTL8101L compal
Contextual Info: A B C D E 1 2 1 BTQ00 Rev1.0 Schematics Document 2 Intel Prescott uFCPGA-478 / P4 Northwood with Springdale / ICH5 / nVIDIA NV18/34/31M chipset 2003/05/15 3 3 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

LA-3541P

Abstract: KB925QF LA-3541P rev 1a IFL90 icl50 la-3551p LA-3551P G993P1UF kb925 ISL6251 LA-3551
Contextual Info: A B C D E ZZZ1 PCB 1 1 Compal Confidential 2 2 IFTxx Schematics Document Intel Merom Processor with Crestline + DDRII + ICH8M With nVIDIA MXM/B 2006-11-01 3 3 REV: 0.1 4 4 2006/08/18 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification

foxconn g41

Abstract: G781P8F foxconn bios flash header PCI8402 TPS2231 MBX 146 mbx 202 schematic kb3910 KB3910SF Foxconn MS01
Contextual Info: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Title of Schematics Page Schematics Page Index Block Diagram Yonah(HOST BUS) 1/2

49lf004a

Abstract: tv crt charger diagram BC163 BC219 ICH4-M BCM4401 MAX1999 BC264 wistron SC1U50V5ZY
Contextual Info: A B DC/DC IMVP4 Switching Power 32 ISL6218 4 INPUTS OUTPUT DCBATOUT VCC_CORE MAX1715 DCBATOUT L3:SIGNAL1 4 34 2D5V_S3 03249-SC ICS950810 L5:VCC L6:GND HOST BUS 3 CRT 100MHz OUTPUTS L7:SIGNAL3 13 L8:COMPONENT DDR DRAM Socket *2 DDR 266/333 HDD Montara-GM+ CH7011