S512 Search Results

Contextual Info: W E l e c t r o n ic h it e D C e s ig n s W S512K32-XXX o r p o r a t io n 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES • Access Tim es of 15*, 17, 20, 25, 35, 45, 55ns ■ TTL Compatible Inputs and Outputs ■ Packaging ■ 5 V o lt Power Supply • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP

SAMSUNG SRAM

Contextual Info: ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Overall configuration as 512K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35 & 45ns Access Times, 15ns Available by Special Order

Contextual Info: /= T SGS-THOMSON * 7 i, ffl WISLiOTWDES T S512,A HIGHSPEED PRECISION DUAL OPERATIONAL AMPLIFIERS • LOW OFFSET VOLTAGE : 500|W max. ■ LOW POWER CONSUMPTION ■ SHORT CIRCUIT PROTECTION ■ LOW DISTORTION, LOW NOISE ■ HIGH GAIN-BANDWIDTH PRODUCT ■ HIGH CHANNEL SEPARATION

td 502 ab

Contextual Info: - r ~ r CS W S512K32-XXX 512Kx32 SRAM MODULE, SMD 5962-94611 P R E L IM IN A R Y * FEATURES • A c c e s s Tim es of 17, 20, 25, 35, 45, 55n s TTL Com patible Inputs and Outputs ■ Pa ckaging 5 V o lt Pow er Su p p ly • 66 pin, P G A Type, 1.385 inch square, Herm etic

Contextual Info: VZA I/VHITE /M ICROELECTRONICS 512Kx32 SRAM MODULE W S512K32B-XXXE PRELIMINARY* FEATURES • A ccess Times of 15,17, 20, 25ns ■ TTL Compatible Inputs and Outputs ■ Low Power BiCM OS ■ 5 Volt Power Supply ■ Packaging ■ • 66 pin, PGA Type, 1.385 inch square, Hermetic

Contextual Info: TT W S512K8-XCX 1/1/HITE / M I C R O E L E C T R O N I C S 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW A18 C 1 A 1 6C 2 ^ 32 31 30 □ A17 A I2 C 4 A7C 5 29 □ WË A6 C 6 27 □ A8 A5 C 7 26 □ A9 3 A ccess Tim es 55, 70, 8 5 , 1 0 0 , 120ns

Contextual Info: ça W S512K32-XXX WHITE /MICROELECTRONICS 512Kx32 SRAM MODULE, SMD 5962-94611 P R E L IM IN A R Y * FEATURES • A cce ss Times of 70, 8 5 ,1 0 0 ,120ns ■ Commercial, Industrial and Military Temperature Ranges ■ Packaging ■ TTL Compatible Inputs and Outputs

SS126

Contextual Info: à a â r * % S5124/6 m - S5124/6 High Performance, Integrated Current Mode PWM Controllers D escription The C S 5124/6 is a fixed frequency current mode controller designed specifically for DC-DC converters found in die telecommunications industry. The C S5124/6 integrates

Contextual Info: S51216FVRH: 512K x 16-Bit Radiation-Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300 krads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0 E9 to 1.8

Contextual Info: SILICON360 S51232FVRH: 512K x 32 Bit Radiation Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300K rads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0E9 to

ir 035P

Abstract: military multichip
Contextual Info: ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Overall configuration as 512K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35 & 45ns Access Times, 15ns Available by Special Order

Contextual Info: i— i— i— i— i— i— r i— i— i— i— i— i— i— i— i— r ACT-S512K32 High Speed 16 Megabit SRAM Multichip Module Features • ■ ■ ■ ■ 4 Low Power CMOS 512K x 8 SRAMs in one MCM Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8

SAs SOT-23 marking

Abstract: marking BSs SAS SOT23 transistor 45 f 123 marking "BSs" E6327 Q62702-S512 Q67000-S245 bss 108 marking SAs SOT23
Contextual Info: BSS 123 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 123 100 V 0.17 A 6Ω SOT-23 SAs Type BSS 123 BSS 123 Ordering Code Q62702-S512

Contextual Info: S5120 series S5120 ACM DVB-RCS VSAT Terminal Features •            DVB-S/S2 CCM,VCM,ACM receive up to 155 Mbps (hub to remote) with Ethernet throughput up to 40 Mbps Up to 8 Mbps transmit (remote to hub) GUI-based control panel

Contextual Info: T7 512 Kx8 M/HITE /MICROELECTRONICS W M S512K8-XXX MONOLITHIC SRAM FEATURES • Access Tim es 70, 8 5 ,1 0 0 and 120nS C om m ercial, Ind ustria l and M ilita ry Tem perature Range ■ MIL-STD-883 C om pliant Devices A vailable , S M D # 5962-95613 pending

Contextual Info: DENSE-PAC MICROSYSTEMS 8 Megabit High Speed CMOS SRAM D S512X 16C n 3/D P S512X 16B n 3 DESCRIPTIO N : The D P S 5 12 X 16Cn3/S512 X 16Bn3 High Speed SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac M icrosystems' ceram ic Stackable Leadless Chip Carriers SLCC .

Contextual Info: D P S512S 16U □PM Dense-Pac M icrosystem s. Inc. 512K X 16 CM OS SRAM MODULE O PRELIMINARY D E S C R IP T IO N : T he D P S 5 1 2 S 1 6 U is a 5 12 K X 16 high-density, low-power static R A M m odule com prised of eight 128K X 8 m onolithic SR A M 's, an advanced high-speed

Contextual Info: il il il il il il il ii ACT-S512K8 High Speed 4 iviegaoit ivionomnic bKAivi . M Wk M • ■ ■ ■ ■ ■ ■ ■ ■ ■ Features ■ Low Power Monolithic CMOS 512K x 8 SRAM ■ Full Military -55°C to +125°C Temperature Range

military mcm 1553

Abstract: SMD A18 Transistor O28 Package smd transistor A8 ACT-S512K32V smd A018
Contextual Info: ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features 4 Low Power CMOS 512K x 8 SRAMs in one MCM Overall configuration as 512K x 32 • Input and Output TTL Compatible ■ 17, 20, 25, 35 & 45ns Access Times, 15ns Available by Special Order

Contextual Info: Silicon360 S512 Series SRAMs 512Kx16,x32,x40-bit Radiation Tolerant Static RAM Features: • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300K rads Si • Prompt Dose: No burn out and latch-up; Dose rate ranging from 1.0E9 to

I01b-1

Abstract: 01b SMD
Contextual Info: WHITE /M IC R O E L E C T R O N IC S Ç 2 W S512K32-XXX 512Kx32 SRAM MODULE. SMD 5962-94611 PRELIMINARY* FEATURES • A ccess Tim es o f 70, 8 5 , 1 0 0 , 120ns ■ C om m ercial, In d u stria l and M ilita ry T e m pe ratu re Ranges ■ Packaging ■ TTL C om p atible Inputs and O utputs

Contextual Info: il il il il il il il ii ACT-S512K8 High Speed 4 iviegaoit ivionomnic bKAivi . M Wk M • ■ ■ ■ ■ ■ ■ ■ ■ ■ Features ■ Low Power Monolithic CMOS 512K x 8 SRAM ■ Full Military -55°C to +125°C Temperature Range

S5122

Contextual Info: T1/CEPT/ISDN-PRI TRANSFORMER P/N: S5122 DATA SHEET A. GENERAL SPECIFICATIONS: 1. EXTENDED AND STANDARD TEMPERATURE RANGE MODELS. 2. DUAL SURFACE MOUNT PACKAGE CONTAINS BOTH TRANSMIT AND RECEIVE. 3. MODELS MATCHED TO LEADING TRANSCEIVER ICs 4. UL 1459 RECONGNIZED.

Contextual Info: SILICON360 S51240FVRH: 512K x 40 Bit Radiation Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300 K rads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0E9 to