S4 1C Search Results

dataman s4

Abstract: DATAMAN S3 POWER SUPPLY DATAMAN S3 Programmer HM66205L 00000-1FFFF AMD 2716 2716 eprom manual programming by switch 2716 prom Dataman S3 AMD PROM burning
Contextual Info: DATAMAN S4 MANUAL Introduction to S4 DATAMAN S4 is a battery-powered PROM programmer for Microsystem Designers. It can readily be used for production programming too.S4 contains 128k, 256k or 512k of RAM which retains data and configuration even when switched off. The

LPDDR2 SDRAM micron

Abstract: lpddr2 MT42L256M32D2 LPDDR2 SDRAM micron lpddr2 MT42L128M32D1 micron LPDDR2 X32 35MR11 lpddr2 DQ calibration 216-ball LPDDR
Contextual Info: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V

MT42L256M32D2

Abstract: LPDDR2 SDRAM micron MT42L128M32D1 PS 229 ADQ-22 micron lpddr2 MT42L256M32D marking wl4 SMD MARKING code 4N Dual LPDDR2
Contextual Info: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V

mt42l128M32

Abstract: mt42l256m32 MT42L64M32D1 LPDDR2-1066 MT42L256M32D4 MT42L128M32D MT42L128M16D1 MT42L128M64D4 MT42L256M32D MT42L128M32D2
Contextual Info: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die

MT42L64M64D2

Abstract: mt42l128M32 LPDDR2-1066 64M32 MT42L128M64D4 MT42L MT42L256M32D4 MT42L64M32D1 LPDDR2 SDRAM micron micron lpddr2
Contextual Info: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die

216-ball

Abstract: Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MT42L128M64D4 MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32
Contextual Info: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die

siemens gmr

Abstract: magnetic field sensor siemens siemens gmr s4 GMR sensor thermal conductivity sensor siemens GMR sensor magnetic
Contextual Info: SIEMENS Giant Magneto Resistive Position Sensor S4 Preliminary Data This angle sensor is based on the brand new Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features • GMR sensor on copper

Contextual Info: SN54LS15, SN54S15, SN74LS15, SN74S15 TRIPLE 3-INPUT POSITIVE AND GATES WITH OPEN-COLLECTOR OUTPUTS APRIL 1985 — REVISED MARCH 1988 SN 54LS15, SN S4 S15 J OR W PACKAG E SN 74LS1S. SN 7 4S1 5 . . . D OR N PACKAGE ITO P V IE W 1AC r c n 4pVcc 2AC 1C 31Y 2BC

TIC-L004-11

Abstract: TIC-L006-11 TIC-L002-11 TIC-L009-11
Contextual Info: Features: 1. Meets IEEE 802.3 and ANSI X3.263 2. Operating Temperature: 0 C ° to +85 C ° 3. 1500Vrms Isolation 4. Enhanced Common Mode Attenuation for maximum EMI Suppression 5. Full Product Qualification Tests 3D Package View S1 S2 S3 S4 Product Selection

XF0013QS4

Abstract: 208H
Contextual Info: 1. M echanical D im ensions: 3. E lectrical Specification s: 25°C 0.730 Max Isolation: 1500 Vrms PRI to SEC c 3.240 TX Turns Ratio: 1CT:2CT (PRI:SEC) RCV Turns Ratio: 1CT:2CT (PRI:SEC) 0.045 0.025 -it 0 .0 0 4 J Min E 0.050 XF MRS WWW X o 2 m Qo XF0013Q S4

S4 DIODE

Contextual Info: 0 G lû 3 b 2 L IO • MITSUBISHI OPTICAL DEVICES FU-52SDU-F2/S2/F4/S4 DUPLEXER MODULE WITH SINGLEMODE FIBER PIGTAIL (1.3 um LD AND 1.3 miti PD) DESCRIPTION FEATU RES Duplexer module FU-52SDU series incorporate a 1.3um laser diode, an InGaAs photodiode and

ICM4712701

Abstract: application of RF robot SFG455A3 rmc npo capacitor ne616 SCB-1320Z TOKO 455KHz ceramic filter 5.5MHz ceramic Filter SA616 NE615
Contextual Info: PHILIPS INTERNATIONAL 71iafl2b GD53b7M S4? « P H I N bOE » Product spaclflcatlon Philips Semiconductors RF Communications Products NE/SA616 Low-voltage high performance mixer FM IF system " P -7 4 - U - o DESCRIPTION The NE/SA616 is a low-voltage high performance monolithic FM IF system

ACS9010

Abstract: XTAL 32.768MHz 8B10B ACS4050 ACS405CS 3.2768MHz crystal
Contextual Info: ACS405CS Main Features * Full duplex serial transmission through a single fiber-optic cable without the need for expensive WDM devices. AC S4 05 CS 4000 SERIES Acapella Optical Modem IC * E2 data-rates of 8.448Mbps or 4*E1 at 2.048Mbps. T2 data rates of 6.312Mbps or 4*T1 at 1.544Mbps.

stpj

Contextual Info: S4 E D • b B S a a T l GDGlti?^ 27b » M O V I MOSEL MSS0601 nOSEL-VITELIC Speech Synthesizer Voice ROM T ^ ' 7 ' 7 - 1 3 FEA TU R ES DESCRIPTION • Single power supply can operate at 2.4V through 5V. The M SS0601 is a single-chip speech synthesizing

HCS370

Abstract: Seed1
Contextual Info: HCS370 HCS370 Programming Specifications 1.0 PROGRAMMING THE HCS370 FIGURE 1-1: PDIP, SOIC, TSSOP S0 S1 S2 S3 S4 SLEEP SHIFT 1 2 3 4 5 6 7 HCS370 HCS370 devices are programmed using a serial method that differs sensibly from that used to program previous KEELOQ encoders. This Serial mode will still

S4 DIODE sma

Abstract: Diode S4 sma S4L2
Contextual Info: SP4T SWITCHES Components The S4 series of single pole, four throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

2482 TRANSISTOR

Abstract: 2482 H 2482 npn 2482 regulator 2482 transistor 2482 2SC4161
Contextual Info: Ordering number: EN 2482 S4ÜYD I 1 No.2482 NPN Triple Diffused Planar Type Silico n Transistor S w i t c h i n g Re g u l a t o r A p p l i c a t i o n s Features . High breakdown voltage, high reliability . Fast switching speed tf=:0.1ps typ . Wide ASO

23D thermistor

Contextual Info: HCS370 HCS370 Programming Specifications 1.0 PROGRAMMING THE HCS370 FIGURE 1-1: S0 S1 S2 S3 S4 SLEEP SHIFT 1 2 3 4 5 6 7 HCS370 HCS370 devices are programmed using a serial method that differs from previous KEELOQ encoders. This Serial mode will still allow the HCS370 to be programmed while in the users system ICSP . This

LCM151

Abstract: DP15 11010 dp11 LCM103 S4 9C DP10 2f 1001 11E11C
Contextual Info: LCM151 液晶显示模块 1 LCM151 RAM 对应显示笔段表 自左→右 8 为 1→15 位,DP 为小数点 S1-S8 见 LCD 图 D3 D2 D1 D0 ADDR D3 D2 S1 S2 S3 S4 00000 8A 8B 1F 1G 1E 1D 00001 9F 9G 1A 1B 1C DP1 00010 9A 9B 2F 2G 2E 2D 00011 10F 10G 2A 2B 2C

Contextual Info: Is 2SD947 > V ^ $ /Transistors A A I f c ^ V T ^ V - ^ N P N / j > h > h 7 > v 7 7 ‘K i l j S S T jt il'if f l/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor m 1 $ - ') > S4 >J V; V vjl T • i'l-JfJ'+tim /Dim ensions U n it: mm)

S4 9C

Abstract: 10D 9F 11010 2f 1001 S4 1C LCM103 LCM109 100-10 k1 d2s3
Contextual Info: LCM109 大型仪表控制柜液晶显示模块 1 LCM109 内存 RAM 对应显示笔段表 8.左→右为 1→10 位,P 为小数点,S 为三角箭头,K 为 D3 S4 1D 1DP 2D 2DP 3D 3DP 4D 4DP 5D 5DP 6D 6DP 7D 7DP 8D D2 S3 1E 1C 2E 2C 3E 3C 4E 4C 5E 5C 6E 6C 7E

sharp z-311j

Abstract: str 10006 JW-22kc OPCH a 322j RJ 000002 basic plc ladder diagram km 1667 datasheet JW-100SA JW-100SP
Contextual Info: R Version 2.0 Produced in May. 2004 Programmable Controller Model name JW-255CM JW-25TCM Z-339J Ethernet module Ethernet board User’s Manual J W-25 CM SDRD 12V S7 S6 S5 S4 5CM T ERFT S3 S2 S1 S0 ON S H I E L D OFF FG RESET （JW-255CM） Thank you for purchasing the Ethernet module board for the Sharp programmable controller.

3G3A

Abstract: LCM103 s6 2g s6 6d 2f 1001 11010 LCM061A S4 1C S4 2A s4 2g
Contextual Info: LCM061A 通用仪器仪表液晶显示模块 1 LCM061A 内存 RAM 对应显示笔段表 8 左→右为 1→6 位,DP 为小数点 S1 S2 S3 S4 S5 S6 S7 为三角箭头. D3 D2 D1 D0 ADDR 1F 1E 1G 1D 1A 1C 1B 2F 2E 2G 2A 2C 2B 3F 3E 3G 3A 3C 3B 4F 4E 4G 4A 4C

Contextual Info: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,