S3 MARKING DIODE Search Results

FMMT3903

Abstract: BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31 BFQ31A
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS Device Type Standard marking BCV71 K7 BCV72 K8 BCW29 C1 C2 BCW30 BCW31 TRANSISTORS Reverse Joggle m arking Device Type K6 K9 C4 Standard marking Reverse Joggle marking BFQ31 S2 S3

Marking Code "s3" diode

Abstract: S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367
Contextual Info: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC

MARKING ta y sod-323

Abstract: 1N914BWS 1N4148WS
Contextual Info: PRE LIM INAR Y DATA SH EET 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Device Type Device Marking 1N4148WS S1 1N4448WS S2 1N914BWS S3 Small Outline Flat Lead Plastic Package Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted

S3 marking DIODE

Abstract: SD101AWS SD101BWS SD101CWS sod323 schottky
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD101AWS-SD101CWS SOD-323 SCHOTTKY DIODES + FEATURES - MARKING: SD101AWS: S1 SD101BWS: S2 SD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD101AWS-SD101CWS SCHOTTKY DIODES SOD-323 FEATURES MARKING: SD101AWS: S1 SD101BWS: S2 SD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

S3 marking DIODE

Abstract: SD101AW SD101BW SD101CW
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SD101AW-SD101CW SCHOTTKY DIODES SOD-123 FEATURES MARKING: SD101AW: S1 SD101BW: S2 SD101CW: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 SOD-523 SCHOTTKY BARRIER DIODE FEATURES z Small pacakage z Low forward voltage z Low reverse current MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃

S3 DIODE schottky

Abstract: S3 marking DIODE Marking s3 Schottky barrier SDB110Q Marking Code s3 diode
Contextual Info: SDB110Q Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • Battery changing diode Ordering Information Type No. Marking SDB110Q S3 Package Code SOD-523 Outline Dimensions unit : mm 1.2±0.1 2 1 0~0.1 2 0.6±0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 SOD-523 High Speed Switching Diode FEATURES z Small pacakage z Low forward voltage z Low reverse current MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃

S3 marking DIODE

Abstract: 1ss388 Marking s3
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 High Speed SWITCHING Diodes SOD-523 FEATURES Small pacakage Low forward voltage : VF3 = 0.54 typ Low reverse current : IR = 5uA ( typ ) MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃

b631 transistor

Abstract: S3 marking DIODE b631 Q62702-B631
Contextual Info: BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 51 S3 1=A Q62702-B631 Package 2=A 3 = C1/C2 SOT-23

Contextual Info: BBY 51 Silicon Tuning Diode 3 • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment 2 1 Type Marking BBY 51 S3 Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT-23

1ss388

Abstract: S3 marking DIODE
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 High Speed SWITCHING Diodes SOD-523 + FEATURES z Small pacakage z Low forward voltage : VF3 = 0.54 typ z Low reverse current : IR = 5uA ( typ ) - MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2303 P-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S3

A2 DIODE SMD CODE MARKING

Abstract: smd diode marking code a2 S3 marking DIODE smd diode code s3 A2 SMD CODE MARKING marking code e1 smd smd diode code l4 marking K2 diode smd schottky diode s3 - 13 DIODE smd marking A1
Contextual Info: Spec. No. : C302S3-H Issued Date : 2004.04.13 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54S3/BAT54AS3 BAT54CS3/BAT54SS3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-323 very small plastic SMD package.

Contextual Info: SMD Switching Diode SMD Diodes Specialist CDSER4148 RoHS Device High Speed Features 0503(1308) Designed for mounting on small surface. 0.053(1.35) 0.045(1.15) Extremely thin/leadless package. High mounting capability, strong surge withstand, high reliability.

Contextual Info: SMD Switching Diode SMD Diodes Specialist CDSQR4148-HF RoHS Device High Speed Features 0402(1005) Halogen free. 0.041(1.05) 0.037(0.95) Designed for mounting on small surface. Extremely thin/leadless package. 0.026(0.65) 0.022(0.55) High mounting capability, strong surge

Contextual Info: SMD Switching Diode SMD Diodes Specialist CDSQR4148 RoHS Device High Speed Features 0402(1005) Designed for mounting on small surface. 0.041(1.05) 0.037(0.95) Extremely thin/leadless package. High mounting capability, strong surge withstand, high reliability.

1N9148

Abstract: S3 marking DIODE marking code s1 SMD diode SOD-323F D10 SMD CODE MARKING smd diode S2 smd diode sod-323 marking code 500 1N4148WS Marking Code s3 diode smd diode code s3
Contextual Info: 1N4148WS/1N4448WS/1N914BWS 200mW High Speed SMD Switching Diode Small Signal Diode SOD-323F B Features C A —Fast switching device Trr<4.0nS —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate

toshiba Ta

Abstract: 1SV216
Contextual Info: TOSHIBA 1SV216 1 SV2 1 6 TOSHIBA VARIABLE CAPACITANCE DIODE TV VHF UHF TUNER AFC SILICON EPITAXIAL PLANAR TYPE Unit in mm M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL

GENERAL SEMICONDUCTOR MARKING UD

Abstract: 1SV225
Contextual Info: TOSHIBA 1SV225 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 22 5 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low Series Resistance Small Package : rs = 0.35 Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

schottky diode sod-123 marking code 120

Abstract: MARKING S3 Marking "s3" Schottky barrier diode sod-123 marking code 120
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

1SV230

Abstract: C20V
Contextual Info: TOSHIBA 1SV230 1 S V2 3 0 TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1st OSC TUNING. SILICON EPITAXIAL PLANAR TYPE • High Capacitance Ratio : C2V / C20V = Typ. • Low Series Resistance : rs = 0.730 (Typ.) • Useful for Small Size Tuner. + 0.2

diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Contextual Info: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"