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    S3 MARKING DIODE Search Results

    S3 MARKING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG80C186-10/BZA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy
    54121/BCA
    Rochester Electronics LLC 54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) PDF Buy
    54F191/QEA
    Rochester Electronics LLC 54F191/QEA - Dual marked (5962-9058201EA) PDF Buy

    S3 MARKING DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    toshiba Ta

    Abstract: 1SV216
    Contextual Info: TOSHIBA 1SV216 1 SV2 1 6 TOSHIBA VARIABLE CAPACITANCE DIODE TV VHF UHF TUNER AFC SILICON EPITAXIAL PLANAR TYPE Unit in mm M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL


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    1SV216 10kil) toshiba Ta 1SV216 PDF

    MBR130T1G

    Abstract: MBR130T3G
    Contextual Info: MBR130T1G, NRVB130T1G, MBR130T3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR130T1G, NRVB130T1G, MBR130T3G OD-123 MBR130T1/D MBR130T1G PDF

    1SV309

    Abstract: C25V
    Contextual Info: 1SV309 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 0 9 UHF SHF TUNING High Capacitance Ratio : C2V / C25V = 5.7 Typ. : rs = 1.20 (Typ.) Low Series Resistance Excellent C-V Characteristics, and Small Tracking Error Useful for Small Size Tuner


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    1SV309 C2V/C25V 1SV309 C25V PDF

    Marking s3

    Abstract: smd transistor s3 1SS388
    Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS388 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low Forward Voltage :VF 3 = 0.54V(TYP.) Low Reverse Current :IR = 5 Ìa(TYP.) +0.1 1.6-0.1 +0.05 0.1-0.02


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    1SS388 OD-523 07max 77max Marking s3 smd transistor s3 1SS388 PDF

    1SS369

    Contextual Info: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS369 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Small Package + +0.1 0.6-0.1 - Low forward voltage :Vf 3 = 0.54V(TYP.) :IR = 5 +0.1 1.6-0.1 A(MAX.) 0.77max +0.05 0.1-0.02 0.07max


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    1SS369 OD-523 77max 07max 1SS369 PDF

    "MARKING CODE S1"

    Contextual Info: ADVANCE INFORMATION SD101AWS - SD101CWS SURFACE MOUNT SCHOTTKY BARRIER SWITCHING DIODE POWER SEMICONDUCTOR Features • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance


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    SD101AWS SD101CWS OD-323 OD-323, MIL-STD-202, SD101BWS SD101CWS DS30078 "MARKING CODE S1" PDF

    1SS357

    Abstract: 1SS357 SOD-323
    Contextual Info: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS357 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Low forward voltage :VF 3 = 0.54 V(Typ) Low resistance current :IR = 5 +0.1 2.6-0.1 :SC-70 0.475 0.375 +0.05 0.1-0.02


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    1SS357 OD-323 SC-70 1SS357 1SS357 SOD-323 PDF

    Contextual Info: ADVANCE INFORMATION SD101AWS - SD101CWS SURFACE MOUNT SCHOTTKY BARRIER SWITCHING DIODE Features • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance Ultra-small Surface Mount Package


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    SD101AWS SD101CWS OD-323 SD101 SD101CW DS30078 SD101AWS- PDF

    S3 DIODE schottky

    Abstract: S3 marking DIODE marking s3 Marking s3 Schottky barrier smd transistor s3 SD101CWS
    Contextual Info: Diodes SMD Type SURFACE MOUNT SCHOTTKY BARRIER DIODE SD101CWS SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Low Forward Voltage Drop +0.1 2.6-0.1 1.0max Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time


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    SD101CWS OD-323 S3 DIODE schottky S3 marking DIODE marking s3 Marking s3 Schottky barrier smd transistor s3 SD101CWS PDF

    SD101AW

    Abstract: SD101AWS SD101BW SD101BWS SD101CW SD101CWS Marking s3 Schottky barrier Marking "s3" Schottky barrier
    Contextual Info: SD101AWS/SD101BWS SD101CWS Surface Mount Schottky Barrier Diodes P b Lead Pb -Free SMALL SIGNAL SCHOTTKY DIODES 15m AMPERES 40-60 VOLTS Features: *Low Forward Voltage *Guard Ring Construction for Transient Protection *Negligible Reverse Recovery Time *Low Capacitance


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    SD101AWS/SD101BWS SD101CWS OD-323 MIL-STD-202 004grams OD-323 24-Nov-09 SD101 SD101AWS SD101AW SD101AWS SD101BW SD101BWS SD101CW SD101CWS Marking s3 Schottky barrier Marking "s3" Schottky barrier PDF

    MBR130T1

    Abstract: MBR130T1G MBR130T3 MBR130T3G
    Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR130T1, MBR130T3 OD-123 MBR130T1/D MBR130T1 MBR130T1G MBR130T3 MBR130T3G PDF

    S3 marking DIODE

    Abstract: marking code Sk transistors J-STD-020A SD101AWS SD101AWS-7 SD101BWS SD101BWS-7 SD101CWS sod-323 diode MARKING CODE 4
    Contextual Info: SD101AWS - SD101CWS SURFACE MOUNT SCHOTTKY BARRIER DIODE SPICE MODELS: SD101AWS SD101BWS SD101CWS Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Capacitance Ultra-small Surface Mount Package


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    SD101AWS SD101CWS SD101BWS OD-323 SD101C SD101AWS-7 3000/Tape S3 marking DIODE marking code Sk transistors J-STD-020A SD101AWS-7 SD101BWS-7 SD101CWS sod-323 diode MARKING CODE 4 PDF

    Contextual Info: 1SS388 SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOD-523 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOD-523 Dim. Min. Max. A 0.51 0.77 MECHANICAL DATA


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    1SS388 OD-523 OD-523 J-STD-020D 2002/95/EC 20x20mm, 1SS388 PDF

    Contextual Info: SEM IC O N DU C TO R 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TJ TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Value Units


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    200mW OD-323 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SD101AW /SD101BW /SD101CW SOD-123 SCHOTTKY DIODES + FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z Negligible Reverse Recovery Time


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    OD-123 SD101AW /SD101BW /SD101CW OD-123 SD101AW: SD101BW: SD101CW: SD101AW SD101BW PDF

    S17B

    Abstract: LM2767 LM2767M5 LM2767M5X MA05B
    Contextual Info: LM2767 Switched Capacitor Voltage Converter General Description Features The LM2767 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of +1.8V to +5.5V. Two low cost capacitors and a diode are used in this circuit to provide at least 15 mA of output current.


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    LM2767 LM2767 OT23-5 S17B LM2767M5 LM2767M5X MA05B PDF

    J-STD-020D

    Abstract: SD101AW SD101BW SD101CW
    Contextual Info: SD101AW, BW, CW SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 to 60 Volts FORWARD CURRENT – 0.015 Ampere FEATURES SOD-123 • Extremely low VF drop • Guard Ring Construction for Transient protection • Negligible Reverse Recovery Time SOD-123


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    SD101AW, OD-123 OD-123 J-STD-020D 2002/95/EC J-STD-020D SD101AW SD101BW SD101CW PDF

    TC1N4148WS

    Abstract: "clip bonding"
    Contextual Info: PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TJ TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Value Units


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    200mW OD-323 100mA TC1N4148WS/TC1N4448WS/TC1N914BWS TC1N4148WS TC1N4448WS TC1N914BWS TC1N4148WS "clip bonding" PDF

    LM2765s

    Abstract: LM2765 S4 DIODE schottky sot 23 S3 marking DIODE s4 vishay LM2765M6 LM2765M6X MA06A S15B DIODE s15b
    Contextual Info: LM2765 Switched Capacitor Voltage Converter General Description Features The LM2765 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of +1.8V to +5.5V. Two low cost capacitors and a diode are used in this circuit to provide up to 20 mA of output current.


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    LM2765 LM2765 OT-23-6 OT23-6 LM2765s S4 DIODE schottky sot 23 S3 marking DIODE s4 vishay LM2765M6 LM2765M6X MA06A S15B DIODE s15b PDF

    schottky marking S4

    Abstract: SD104AWS SD104BWS SD104CWS SCHOTTKY MARKING cd S0D-323
    Contextual Info: SD104AWS thru SD104CWS Schottky Diodes t c u rod P New SOD-323 .012 0.3 .065 (1.65) .076 (1.95) .100 (2.55) .112 (2.85) Cathode Band Top View Mounting Pad Layout 0.055 (1.40) 0.062 (1.60) 0.047 (1.20) .006 (0.15) max. .004 (0.1) max. .059 (1.5) .043 (1.1)


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    SD104AWS SD104CWS OD-323 OD-323 SD104AWS SD104BWS schottky marking S4 SD104BWS SD104CWS SCHOTTKY MARKING cd S0D-323 PDF

    SD101AWS

    Abstract: SD101AWS-T1 SD101BWS SD101BWS-T1 SD101CWS SD101CWS-T1
    Contextual Info: SD101AWS SD101CWS WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability


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    SD101AWS SD101CWS OD-323 OD-323, MIL-STD-202, SD101BWS SD101AWS SD101AWS-T1 SD101BWS SD101BWS-T1 SD101CWS SD101CWS-T1 PDF

    S3 marking DIODE

    Abstract: Marking s3 diode BY 028
    Contextual Info: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS388 Features • • • • • High speed switching diode 45 Volts Switching Diode Surface mount package


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    1SS388 OD-523, MIL-STD-202, OD-523 S3 marking DIODE Marking s3 diode BY 028 PDF

    smd diode code g3

    Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
    Contextual Info: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C


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    160-0055X1 160-0055X1-BL 160-0055X1-SL 160-0055X1-SMD 160-0055X1 smd diode code g3 smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6 PDF

    BFS36

    Abstract: BS9365 marking W4 NPN 2N2475 BFS37 f025 MARKING BS 2N929 2N930 BAW63
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A marking W4 NPN 2N2475 BFS37 f025 MARKING BS PDF