S28I Search Results
S28I Price and Stock
Microchip Technology Inc MCP6S28-I/SLSP Amp Variable Gain Amp Single R-R I/O 5.5V 16-Pin SOIC N Tube |
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MCP6S28-I/SL | 8,550 |
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MCP6S28-I/SL | Tube | 5 Weeks | 150 |
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MCP6S28-I/SL | Bulk | 1,211 | 1 |
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| MCP6S28-I/SL | Bulk | 200 |
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MCP6S28-I/SL | Bulk | 5 Weeks | 200 |
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MCP6S28-I/SL | Tube | 840 | 5 Weeks |
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MCP6S28-I/SL | 150 |
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MCP6S28-I/SL | 10 Weeks | 50 |
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MCP6S28-I/SL | 100 | 9 Weeks | 50 |
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MCP6S28-I/SL | 25,070 |
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Microchip Technology Inc MCP6S28-I/PSP Amp Variable Gain Amp Single R-R I/O 5.5V 16-Pin PDIP Tube |
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MCP6S28-I/P |
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MCP6S28-I/P | Tube | 5 Weeks | 120 |
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MCP6S28-I/P | Bulk | 1 |
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| MCP6S28-I/P | Bulk | 250 |
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MCP6S28-I/P | Bulk | 52 Weeks | 150 |
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MCP6S28-I/P | Tube | 295 | 5 Weeks |
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MCP6S28-I/P | 7 Weeks | 30 |
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MCP6S28-I/P | 6 Weeks | 30 |
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MCP6S28-I/P | 10,813 |
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Amphenol Corporation C-Q28ARS28IN-P5M- Bulk (Alt: C-Q28ARS28IN-P5M) |
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C-Q28ARS28IN-P5M | Bulk | 50 |
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Amphenol Corporation C-Q28CIS28IN-O1M- Bulk (Alt: C-Q28CIS28IN-O1M) |
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C-Q28CIS28IN-O1M | Bulk | 50 |
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Amphenol Corporation C-Q28CIS28IN-O2M- Bulk (Alt: C-Q28CIS28IN-O2M) |
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C-Q28CIS28IN-O2M | Bulk | 50 |
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S28I Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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circuit of rowa television
Abstract: toshiba b54
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OCR Scan |
432-word18-bittc59rm818mbb2m-wordx18+6 | |
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Contextual Info: THMR2N16-6/-7/-8 TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 268,435,456-WORD BY 16-BIT 512M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N16 is a 268,435,456-word by 16-bit direct rambus dynamic RAM module consisting of 16 TC59RM816MB and Direct Rambus DRAMs on a printed circuit board. |
OCR Scan |
thmr2n16-6/-7/-8456-word16-bitthmr2n16+4 | |
da53
Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
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128/144mbit256kx16/18x32s128/144-mbit600mhz+12 | |
direct rdram rambus 1200Contextual Info: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high |
Original |
600mhzdl-0118-07direct rdram rambus 1200 | |
da53
Abstract: DB26 0195c Outline T39
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Original |
512kx16/18x32s600mhzdl-0118-010da53+3 | |
da53
Abstract: DB26
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8mx16/18x4idl0117-010da53db26 | |
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Contextual Info: TOSHIBA TH M R2 E4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 18-BIT 128M Bytes Direct Rambus D RAM MODULE DESCRIPTION The THMR2E4Z is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM818MB Direct Rambus DRAMs on a printed circuit board. |
OCR Scan |
108f864-word18-bit864-wordtc59rm818mb+4 | |
TC59RM716GB
Abstract: 9T20T
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OCR Scan |
tc59rm716gb-8128-m800-mtest77+4 | |
HYB25M144180C-653
Abstract: HYB25R128160C-653 HYB25R128160C-745 HYB25R128160C-840 HYB25R128160C-845 HYB25R144180C-653 HYB25R144180C-745 HYB25R144180C-840 HYB25R144180C-845 Direct rdram
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128/144-mbittest77test78hyb25m144180c-653+9 | |
diode t29
Abstract: EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E
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edr2518abseedr2518ab1066mhz288mbits+12 | |
64H40
Abstract: circuit of rowa television CM05
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OCR Scan |
728-word16-bittc59rm816mb128m-word+6 | |
DGA4
Abstract: loqb 47KQ B23A B85A Toshiba Rambus IC
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OCR Scan |
432-word16-bittc59rm816mb32m-wordxl6+9 | |
da53
Abstract: DB26 BE1210 DB62 ROP10
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256/288-mbit512kx16/18x32s600mhz800mhz+6 | |
da53
Abstract: DB26 DL010
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256/288-mbit1mx16/18x16d600mhz800mhz+4 | |
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da53
Abstract: DB26 KM416RD8AC KM418RD8AC
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km416rd8ac/km418rd8ac128/144mbitda53+2 | |
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Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. P 128 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where |
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pd488448128m-bit | |
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Contextual Info: 1066 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high |
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512kx16/18x32s600mhzdl-0118-050 | |
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Contextual Info: KM416RD8AC D /KM418RD8AC(D) Preliminary Direct RDRAM 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.0 July 1999 Page -2 Rev. 1.0 Jul. 1999 KM416RD8AC(D)/KM418RD8AC(D) Preliminary Direct RDRAM™ Revision History Version 1.0 (July 1999) - Preliminary |
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km416rd8ac/km418rd8ac128/144mbit | |
745 B36 diode
Abstract: micron sensor spd 357 RM01 MT8VR6416A
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mt4vr3216amt4vr3218amt8vr6416amt8vr6418a+9 | |
da53
Abstract: 144MD-50-711 144MD-53-600 128MD-40-800 128MD-50-711 128MD-53-600 144MD-40-800
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128/144-mbit256kx16/18x32s600mhz800mhz+8 | |
RDRAM ClockContextual Info: 1066 MHz RDRAM 256/288 Mb 4Mx16/18x4i Advance Information Overview The RDRAM device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high |
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dl-0119-030rdram clock | |
da53
Abstract: DB26 DL0054 ycl dc 101
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4mx16/18x4idl-0119-010da53db26+2 | |
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Contextual Info: DATA SHEET 288M bits Direct Rambus DRAM µPD488588 512K words x 18 bits × 32s banks Description Features The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any |
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pd488588288mbits600mhz800mhz+1 | |
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Contextual Info: Preliminary Direct RDRAM K4R271669A for Short Channel 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM Short Channel Revision 0.951 May 2000 Page -2 Rev. 0.951 May 2000 Preliminary Direct RDRAM™ K4R271669A for Short Channel Revision History |
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k4r271669a128mbit | |