S22 SERIES Search Results

S221

Contextual Info: DATA SHEET VMF-300 A Bulk Metal Foil Established Reliability Resistors Military Specification MIL-R-122 C O M P A N Y O F VISHAY FOIL RESISTORS ▼ Vishay Model S22-1 U.S. Military Designation M122/1 VISHS006 The VISHAY S22-1 M122/1 is qualified to the reliability

6075111010_EN

Abstract: Bernstein SCR 3-W22-3.6-D
Contextual Info: Technical Data Safety Relay Combination Series SCR SCR 4-W22-3.5-SD Description Article number 6075111010 Assembly and function function circuit diagram A1 A2 (+) (-) S33 S34 S11S12 S21 S22 13 23 33 41 14 24 34 42 Electr. Fuse Transformer ~ ~ K1 ~ Monitoring Logic

6075111009_EN

Abstract: Bernstein SCR 3-W22-3.6-D
Contextual Info: Technical Data Safety Relay Combination Series SCR SCR 4-W22-3.5-D Description Article number 6075111009 Assembly and function function circuit diagram A1 A2 (+) (-) S33 S34 S11S12 S21 S22 13 23 33 41 14 24 34 42 Electr. Fuse Transformer ~ ~ K1 ~ Monitoring Logic

Contextual Info: HI-8020, HI-8120 CMOS High Voltage Display Driver March 2007 GENERAL DESCRIPTION PIN CONFIGURATION Top View S26 S25 S24 S23 S22 S21 S20 DOUT 32 BP S19 S18 The HI-8020 & HI-8120 high voltage display drivers are functional replacements for the AMI S5420 and

32 PLCC to 28 din

Contextual Info: HI-8020/HI-8120 July 2006 CMOS HIGH VOLTAGE DISPLAY DRIVER GENERAL DESCRIPTION PIN CONFIGURATION Top View S26 S25 S24 S23 S22 S21 S20 DOUT 32 BP S19 S18 The HI-8020 & HI-8120 high voltage display drivers are functional replacements for the AMI S5420 and

64 CERAMIC LEADLESS CHIP CARRIER LCC

Contextual Info: HI-8020/HI-8120 February 2003 CMOS HIGH VOLTAGE DISPLAY DRIVER GENERAL DESCRIPTION PIN CONFIGURATION Top View S26 S25 S24 S23 S22 S21 S20 DOUT 32 BP S19 S18 The HI-8020 & HI-8120 high voltage display drivers are functional replacements for the AMI S5420 and

HI-8120J-85

Abstract: 8120j HI-8010 HI-8020 HI-8020J-85 HI-8120 S4520 S5420
Contextual Info: HI-8020, HI-8120 CMOS High Voltage Display Driver November 2007 GENERAL DESCRIPTION PIN CONFIGURATION Top View S26 S25 S24 S23 S22 S21 S20 DOUT 32 BP S19 S18 The HI-8020 & HI-8120 high voltage display drivers are functional replacements for the AMI S5420 and

mic8010

Abstract: FBP10 HI-8020 HI-8020J-85 HI-8120 HI-8120J-85 S4520 S5420 HI-8010 8120j
Contextual Info: HI-8020/HI-8120 September 2006 CMOS HIGH VOLTAGE DISPLAY DRIVER GENERAL DESCRIPTION PIN CONFIGURATION Top View S26 S25 S24 S23 S22 S21 S20 DOUT 32 BP S19 S18 The HI-8020 & HI-8120 high voltage display drivers are functional replacements for the AMI S5420 and

BF1201A

Abstract: bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A
Contextual Info: RF Products RF Products 241 RF Access Systems CATV RF Hybrid Amplifiers Type Number Description Frequency Range Gain dB Slope (dB) FL S11/S22 CTB XMOD CSO @Ch @Vo (dBmV) F @fmax Itot (mA) BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V 5 - 65 25 - 26

Srf 1427

Abstract: 43115 LTC6431IUF-15 HD4 marking
Contextual Info: LTC6431-15 50Ω Gain Block IF Amplifier Features Description 20MHz to 1700MHz Bandwidth n 15.5dB Power Gain n 47dBm OIP3 at 240MHz into a 50Ω Load n NF = 3.33dB at 240MHz n 1nV/√Hz Total Input Noise n S11 < –15dB Up to 1.2GHz n S22 < –15dB Up to 1.2GHz

INTEL 845 MOTHERBOARD CIRCUIT diagram

Abstract: 2010 gtl diagrams AN10145 GTL2000 GTL2002 GTL2002D GTL2002D-T GTL2010 JESD22-A114 JESD22-A115
Contextual Info: INTEGRATED CIRCUITS DREF GREF SREF D1 D22 S1 S22 ABSTRACT Philips Semiconductors Gunning Transceiver Logic Translator Voltage Clamp GTL-TVC bi-directional low voltage translators are used in bi-directional signaling voltage level translation applications. Voltage translation can be from any voltage between 1.0 V to 5.0 V to any voltage

SRF 1423

Abstract: A4056 A2755 Diode SRF 10-16 LTC6409
Contextual Info: LTC6431-20 20dB Gain Block, 50Ω IF Amplifier FEATURES DESCRIPTION 50Ω Matched 20MHz to 1400MHz n 20.8dB Power Gain n 46.2dBm OIP3 at 240MHz Into 50Ω n NF = 2.6dB at 240MHz n 0.6nV/√Hz Total Input Noise n S11 < –10dB Up to 2.0GHz n S22 < –10dB Up to 1.4GHz

A5244

Contextual Info: LTC6431-15 50Ω Gain Block IF Amplifier FEATURES n n n n n n n n n n n n n n n n DESCRIPTION 20MHz to 1700MHz Bandwidth 15.5dB Power Gain 47dBm OIP3 at 240MHz into a 50Ω Load NF = 3.33dB at 240MHz 1nV/√Hz Total Input Noise S11 < –15dB Up to 1.2GHz S22 < –15dB Up to 1.2GHz

BUS22

Abstract: BUS22B BUS22C
Contextual Info: N AMER PHILIPS/DISCRETE BSE D • ^53*131 G01Ô743 4 ■ BU S22 SER IE S r - 3 3 ~ J 3 SILICO N DIFFUSED PO W ER T R A N S IS T O R S High-voltage, high-speed, glass-passivated npn power transistors in a TO -3 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.

tag 8418

Abstract: PTL-13-423 dupont 951 green tape BPSPT-250-1W brady MIL-DTL-23053/5 B-7595 PSPT-187-175Y BPSPT-094-1W D409 transistor PTL-27-426
Contextual Info: Vi si t w w w an w. in d tl a a T re s22 TL L g 0 S S ist 0. p r P 22 e r c o m in C 0 to te L i 0 r nk o r TLS 2200 TLS PC LINK Thermal Labeling Systems TLS Thermal La Replace ribbons in seconds. A clean cut every time. The TLS thermal labeling systems feature a

high power FET transistor s-parameters

Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

transistor s11 s12 s21 s22

Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

RF transistors with s-parameters

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

Contextual Info: plerowTM ALN0925BT Internally Matched LNA Module Features Description • S21 = 18.4 dB @ 890 MHz = 17.6 dB @ 960 MHz · NF of 0.8 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount

Micro-X Marking 865

Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION

NE94433-T1B

Abstract: 2SC3545 2SC4184 NE944 NE94430 NE94430-T2 NE94432 NE94433 0840 057 MICROWAVE TRANSISTOR
Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry

Contextual Info: 2 WATT C-BAND POWER GaAs MESFET FEATURES NE85002 SERIES SELECTION CHART TYPICAL PERFORMANCE FREQUENCY GL RANGE dBm (GHz) (dB) • CLASS A OPERATION PART NUMBER • HIGH EFFICIENCY: ηADD ≥ 39% TYP POUT • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip

ta 8659 n

Abstract: TA 8659 1582 Series 851M00 F5CE-906M00-K215 CRYSTAL 20 mhZ CRYSTAL 20 MHZ datasheet K204 transistor K235 K237
Contextual Info: FUJITSU MEDIA DEVICE DATA SHEET DS04-23117-3E ASSP Mobile Communication Systems Piezoelectric SAW BPF 700 to 1700 MHz F5/F6 Series (K2 type) • DESCRIPTION The F5CE/F6CE-K2 series of SAW band pass filters is available in the 700-1700 MHz frequency range and exhibit

Non-Volatile RAM

Abstract: S-22H DP-018
Contextual Info: Rev.1.1 S-22 Series PARALLEL NON-VOLATILE RAM The S-22 Series is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable and programmable 2 memory E PROM to backup the SRAM. The organization is 256wordx4-bit (total 1K bits) for the S-22H12 and the S-22S12, and 64word×4-bit (total 256 bits) for the S-22H10 and the S-22S10.