S2 MARKING TRANSISTOR Search Results

CJ2302

Abstract: MOSFET SOT-23 cj230 mosfet vgs 5v marking diode S2 sot-23 CJ2302 S2
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2302 N-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S2

BSS-229

Abstract: BSS229
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor BSS 229 • VDS • /„ • • • • • 250 V 0.07 A ^ D S o n 100 S2 N channel Depletion mode High dynamic resistance Available grouped in VQS(th) Type Ordering Code Tape and Reel Information PinC onfigu ration Marking Package

Contextual Info: MC34271 Liquid Crystal Display and Backlight Integrated Controller 32 31 30 29 28 27 26 25 Sync RT Gnd VA Vref EN1 EN2 PIN CONNECTIONS AND MARKING DIAGRAM 1 DS1 DS2 24 2 Ref1 Ref2 23 3 FB1 FB2 22 4 Comp1 5 SS1 SS2 20 V1 V0 8 Drv1 V2 D2 18 V3 7 D1 V4 S2 19

ZVN4206E

Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
Contextual Info: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA

KAG TRANSISTOR

Abstract: DMN5L06V DMN5L06V-7 DMN5L06VA DMN5L06VA-7 g2 marking DIODE
Contextual Info: DMN5L06V/VA NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Very Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed

DMN5L06VAK

Abstract: DMN5L06VAK-7 DMN5L06VK DMN5L06VK-7
Contextual Info: SPICE MODEL: DMN5L06VK DMN5L06VAK DMN5L06VK/VAK NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual N-Channel MOSFET SOT-563 Low On-Resistance A Very Low Gate Threshold Voltage

Contextual Info: Transistors SMD Type Dual N-Channel Enhancement Mode MOSFET FTD2019 TSSOP-8 • Features Unit: mm ● RDS ON =28mΩ Max. @VGS=4V ● RDS(ON)=35mΩ Max. @VGS=2.5V D1 D2 S1 S2 S1 S2 D1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2

DMN5L06DW

Abstract: DMN5L06DW-7
Contextual Info: DMN5L06DW NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-363 Very Low Gate Threshold Voltage Low Input Capacitance A Fast Switching Speed D2

AO4916

Abstract: 4916 mosfet AO4916L 4916 alpha rjl 10a
Contextual Info: Rev 3: Nov 2004 AO4916, AO4916L Green Product Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch

HN3C18FU

Contextual Info: TOSHIBA HN3C18FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.4dB (f=2G Hz) • High Gain : |S2 i e |2 = 10dB (f=2G Hz)

TRANSISTOR K38

Abstract: BSS138* spice model marking k38 BSS138DW-7-F BSS138DW BSS138DW-7 J-STD-020A
Contextual Info: SPICE MODELS: BSS138DW BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Also Available in Lead Free Version A D2 · · · · ·

Contextual Info: i_L ObE » N AMER PHILIPS/DISCRETE l bb53^31 0015001 LV2327E40R 3 i- o * ? r - MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear wideband power amplifier from 2,3 to 2,7 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

2-2K1A

Contextual Info: 2 S C 5 0 9 8 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR TENTATIVE DATA U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • • Low Noise Figure, High Gain. NF = 1.8dB, |S2leP = 9-5dB f=2GHz 2. 110.1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

6 PIN TRANSISTORS 58A

Abstract: SPN8822A N-Channel Enhancement Mode MOSFET SPN8822ATS8RG SPN8822ATS8TG
Contextual Info: SPN8822A Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8822A is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially

Contextual Info: TOSHIBA 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ji-MOSV T E N T A T IV E 2SK3443 High Speed Switching, High Current Applications Industrial Applications U nit in mm Switching Regulator, DC-DC Converter and Motor Drive Applications

Contextual Info: T O SH IB A 2SC5066FT TOSHIBA TRANSISTOR K f SILICON NPN EPITAXIAL PLANAR TYPE RilfifiFT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF = l.ld B , |S2 ie l2 = 12dB U n it in mm 1.2 ± 0 .0 5 f= lG H z 0.8 ± 0.05

mj 773

Abstract: 2SK3443
Contextual Info: 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: ⎪Yfs⎪ = 9 S (typ.)

HN3C18F

Abstract: E33 marking
Contextual Info: TOSHIBA HN3C18F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 18 F VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Including Two Devices in SM6 (Super Mini Type with 6 Leads) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SC5096F

Abstract: transistor ESM
Contextual Info: TOSHIBA TENTATIVE 2SC5096F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le |2= 7.5dB f=2GHz Unit in mm 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA TENTATIVE 2SC5096F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le |2= 7.5dB f=2GHz Unit in mm 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

2SK3445

Contextual Info: 2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3445 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)

2SK3388

Contextual Info: 2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3388 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.)

2SK3387

Abstract: K3387
Contextual Info: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)

2SC5084

Contextual Info: TOSHIBA 2SC5084 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5084 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , Unit in mm + 0.5 2 .5 - 0.3 |S2 lel 2—lld B f= 1GHz MAXIMUM RATINGS (Ta = 25°C)