S1516 Search Results

Contextual Info: SPICE Device Model SiA430DJT www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY -30 • TrenchFET power MOSFET RDS(on) () MAX. ID (A) a, e 0.031 at VGS = -10 V -7.7 • Low-on resistance 0.035 at VGS = -4.5 V -7.3 • Ultra-small 1.6 mm x 1.6 mm maximum outline

Contextual Info: IRF820S, SiHF820S, IRF820L, SiHF820L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) () VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D D2PAK (TO-263)

Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.050 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single D2PAK (TO-262) G G D

74HC042

Abstract: pd8861 DIP10 74HC04 S5400 74AC042
Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD8861 5400 画素x3 列 カラーCCD リニア・イメージ・センサ µ PD8861 は，CCD（Charge Coupled Device）によって走査をする，色分解と光から電圧への変換機能を持つ 5400

Contextual Info: SPICE Device Model SQS850EN www.vishay.com Vishay Siliconix N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: Si7461DP www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -60 RDS(on) () ID (A) 0.0145 at VGS = -10 V -14.4 0.0190 at VGS = -4.5 V -12.6 PowerPAK • Material categorization: for definitions of compliance please see

Contextual Info: SPICE Device Model SQM50P03-07 www.vishay.com Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

74HC04

Abstract: S5400 what is a cds sensor
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD8861 5400 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR DESCRIPTION The µ PD8861 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation.

PD8861

Abstract: 74HC04 S5400
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

s2513

Abstract: MSM 7225 S1709 E146370 S1113 s1716 SLR-16 s2311 sm 314 1040 D1 S2438
Contextual Info: Patent #: P-2631996 Patented Security: International Approvals: UL # E146370 CSA # LR50370-10 VDE # 57986 SEV # 100989 Protection: Material: Rated Temperature: Seal: Resistant to: Up to 70 PSI Polyamide - flame retardant, self-extinguishing nylon with neoprene bushing

Contextual Info: IRF720S, SiHF720S, IRF720L, SiHF720L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) () VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D G G Note

Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single D2PAK (TO-263) G D

CCD linear array

Abstract: 74HC04 S5400
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD8861 5400 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR DESCRIPTION The µ PD8861 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation.

201091B

Abstract: zigbee traNsmitter receiver circuit Ember Corporation S1525 S1553 ZigBee IEEE 802.15.4-2003 QPSK DSSS S1516 SKY65336 SKY65337
Contextual Info: APPLICATION NOTE Extending 2.4 GHz ZigBee Short-Range Radio Performance with Skyworks SKY65336/SKY65337 Front-End Modules Introduction Receiver Sensitivity Skyworks SKY65336 and SKY65337 ZigBee Front-End Modules FEMs can greatly enhance the performance of a ZigBee radio

Contextual Info: S IL S 25 to 25 e r ie s and 30 W a t t s 30 W a t t s - S I L S e r i e s Ultra-Wide Input,Single and Dual Output F eatures Ultra-Wide Input Voltage Range 2:1 and 4:1 Pi Network Input Filter Low Profile Package Current Limiting Short Circuit Protection

Contextual Info: Si8425DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () MAX. ID (A) a, e 0.023 at VGS = -4.5 V -9.3 0.027 at VGS = -2.5 V -6.2 0.040 at VGS = -1.8 V -5.1 Qg (TYP.) 36 nC • Low-on resistance

Contextual Info: Si8457DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () MAX. ID (A) a, e 0.0190 at VGS = -4.5 V -10.2 0.0234 at VGS = -2.5 V -9.2 0.0350 at VGS = -1.8 V -7.5 VDS (V) -12 Qg (TYP.) 37 nC 6 1. 7 845xx x m m

Contextual Info: Si8439DB www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () MAX. ID (A) a, e 0.025 at VGS = -4.5 V -9.2 VDS (V) -8 0.030 at VGS = -2.5 V -8.4 0.037 at VGS = -1.8 V -7.6 0.061 at VGS = -1.5 V -5.9 0.125 at VGS = -1.2 V

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

Contextual Info: IRF830S, SiHF830S, IRF830L, SiHF830L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single D D2PAK (TO-263)

74HC04

Abstract: S5400
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD8861 5400 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR DESCRIPTION The µ PD8861 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation.

PD8861

Abstract: 74HC04 S5400
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid