SIA430DJT Search Results

Contextual Info: SPICE Device Model SiA430DJT www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SiA430DJT_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: SiA430DJT www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. ID (A) b, c 0.0135 at VGS = 10 V 12 a 0.0185 at VGS = 4.5 V 10.8 • TrenchFET power MOSFET Qg (Typ.) • Thermally enhanced PowerPAK® SC-70 package

schematic diagram atx Power supply 500w

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Arduino Mega2560

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Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: New Product SiA430DJ Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b, c 0.0135 at VGS = 10 V 12a 0.0185 at VGS = 4.5 V 10.8 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

SiA430DJ-T1-GE3

Contextual Info: New Product SiA430DJ Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b, c 0.0135 at VGS = 10 V 12a 0.0185 at VGS = 4.5 V 10.8 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: SiA430DJ Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b, c 0.0135 at VGS = 10 V 12a 0.0185 at VGS = 4.5 V 10.8 VDS (V) 20 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package RoHS COMPLIANT

SiA430DJ-T1-GE3

Abstract: S8117
Contextual Info: New Product SiA430DJ Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b, c 0.0135 at VGS = 10 V 12a 0.0185 at VGS = 4.5 V 10.8 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: New Product SiA430DJ Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b, c 0.0135 at VGS = 10 V 12a 0.0185 at VGS = 4.5 V 10.8 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

220v AC voltage stabilizer schematic diagram

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585