S1421 Search Results

relay s 1420 156 724

Abstract: carlo gavazzi sensing relay 156 relay 724 gavazzi s1420 photoelectric switch amplifier S1421 S1420 s411 230 volt ac overvoltage protection MCF 3W
Contextual Info: Photoelectrics Amplifier Types S1420, S1421 • Amplifier relay for photoelectric switches • Sensivity range DIP-switch selectable • Sensivity adjustment by potmeter • Dirt accumulation alarm and alignment control • Timer functions • Modulated and synchronized light

TRANSISTOR REPLACEMENT B 1151

Abstract: ST 9241 EN12978 ST-03 sensor tester types of pnp transistor pin diagram S142 ST-03 carlo gavazzi ST 115 230
Contextual Info: Photoelectrics Amplifier Type S142B. • • • • • • µ-Processor controlled Amplifier relay for photoelectric switches Automatic or manual emitter power regulation Self-diagnostic functions Alignment help Rated operational voltage: 24 VAC/DC, 115 VAC or 230 VAC

Contextual Info: DATA SHEET SKY13321-360LF: 0.1-3.0 GHz GaAs SPDT Switch Applications Description • Higher power applications with excellent linearity performance • WiMAX systems The SKY13321-360LF is a pHEMT GaAs FET I/C switch. The switch may be used in transmit/receive applications by

Contextual Info: SPICE Device Model SiSA10DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

SQ1902EL

Contextual Info: SPICE Device Model SQ1902EL www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SiSS40DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: DATA SHEET SKY13321-360LF: 0.1-3.0 GHz GaAs SPDT Switch Applications RFC • Higher power applications with excellent linearity performance  WiMAX systems J2 J1 Features  Positive voltage control 0 to 1.8 V  High isolation, 26 dB typical @ 1 GHz

Contextual Info: SiC620R, SiC620AR www.vishay.com Vishay Siliconix 60 A VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC620R and SiC620AR are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density

Contextual Info: SPICE Device Model SUP_SUB75P03-07 www.vishay.com Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SUM120N04-1m7L www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SiS822DNT www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

Contextual Info: DATA SHEET SKY13321-360LF: 0.1-3.0 GHz GaAs SPDT Switch Applications RFC • Higher power applications with excellent linearity performance  WiMAX systems J2 J1 Features  Positive voltage control 0 to 1.8 V  High isolation, 26 dB typical @ 1 GHz

IMS1420S45

Abstract: IMS1420P IMS1421S40 IMS1420P-55 IMS1420P45 Block Diagram of 8057 IMS1421S50 IMS1420P55 IMS1420P-45 IMS1420S55
Contextual Info: IMS1420 S1421 □ High Performance 4Kx4 Static RAM mos FEATURES D E S C R IP T IO N The IMS1420 and S1421 feature fully static opera­ tion requiring no external clocks or timing strobes, and equal address access and cycle times. Additionally, the IMS1420 provides a Chip Enable E function that can

201072D

Abstract: S1415 S1480 S1421 sky13321 S1477 S14-15 s1476 S1420
Contextual Info: DATA SHEET SKY13321-360LF: 0.1-3.0 GHz GaAs SPDT Switch Applications RFC • Higher power applications with excellent linearity performance  WiMAX systems J2 J1 Features  Positive voltage control 0 to 1.8 V  High isolation, 26 dB typical @ 1 GHz

Contextual Info: Photoelectrics Amplifier Type S142B. • • • • • • µ-Processor controlled Amplifier relay for photoelectric switches Automatic or manual emitter power regulation Self-diagnostic functions Alignment help Rated operational voltage: 24 VAC/DC, 24 VAC, 115 VAC or 230 VAC

Contextual Info: SPICE Device Model Si8457DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

S1421

Abstract: s1476 S1477 S1415 S1420 S1480
Contextual Info: DATA SHEET SKY13321-360LF: 0.1-3.0 GHz GaAs SPDT Switch Applications RFC x Higher power applications with excellent linearity performance x WiMAX systems J2 J1 Features x Positive voltage control 0 to 1.8 V x High isolation, 26 dB typical @ 1 GHz x Low loss, 0.4 dB typical @ 1 GHz

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

S1420

Abstract: MNFT15 MNFR15 S1421 photoelectric switch amplifier MMFTR15 cable tv amplifier S142 infrared emitter and receiver
Contextual Info: Photoelectrics Through-beam for Separate Amplifier Types MMF, MNF • • • • • • • • • • MMF Range: 15 m Easy alignment Modulated infrared light High immunity to ambient light For amplifier series S142. Degree of protection IP 66/IP 67 For harsh environment

HDR 1x36

Contextual Info: r 1 I PLATING N U M B E R 2 C o n ta c t A rea ’’Dim D” TAIL PLATING X X X X X -1 Y Y -X X 3 0 p "/ 0 .7 6 p Au O VER 5 0 p ”/ 1 . 2 7 p Ni. 1 0 0 p ''/ 2 . 5 4 p T IN -L E A D O V ER 5 0 p " / 1 . 2 7 p Ni. X X X X X -2 Y Y -X X 15 p ”/ 0 . 3 8 p Au O V E R 5 0 p ”/ l . 2 7 p

ST1536

Abstract: st433 st258 asl1000 st431 SL1010 ST1526 ST1302 tx st433 ST1556
Contextual Info: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910010-24 FR FAMILY EVALUATION BOARD SK-91460-MAIN V1.2 USER GUIDE This manual refers to PCB version V1.2 SK-91460-MAIN v1.2 Revision History Revision History Date 15.06.2005 22.06.2005 06.07.2005 18.07.2005