S12271 Search Results

Contextual Info: Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical power

Contextual Info: Si PINフォトダイオード S12271 紫外～近赤外域用大面積高速PINフォトダイオード S12271は、φ4.1 mmという広い受光面サイズをもち、高速応答を実現したSi PINフォトダイオードです。受光窓に石英ガ

Contextual Info: MODULE Si photodiode evaluation circuit C9052 series Easy-to-use circuit for Si photodiode operation Features Applications l Allows easy evaluation of standard Si photodiodes l On-board circuit examples for typical applications of l Testing and evaluation of standard Si photodiodes

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

G1125-02

Abstract: S2216 02 S1863 G1126-02
Contextual Info: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

Contextual Info: Siフォトダイオード 第 章 2 1 Siフォトダイオード 章 1-1 動作原理 1-2 等価回路 1-3 電流ー電圧特性 1-4 直線性 1-5 分光感度特性 1-6 ノイズ特性 1-7 感度均一性 1-8 応答速度 1-9 オペアンプとの接続

hamamatsu S875

Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
Contextual Info: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for

7805 sot23

Abstract: THERMISTORS SCK 055 oxygen sensor operational amp THERMISTORS SCK 053 Setra System 7805 sot-23 LTC1407A-1 LTC1408 LTC1867 LTC6244 so8
Contextual Info: VOL 2 Industrial Signal Chain High Performance Analog ICs 04107_Industrial Signal Chain.r1.indd 1 10/21/08 3:34:45 PM Industrial systems demand semiconductors that are precise, flexible and reliable. Linear Technology offers a broad line of high performance

city 4OX

Abstract: 636 1.5uF 8000 7805 so8 81216AD LTC1407A-1 DFN-38 7805 SOT-23 setra LTC6910-1 LT1637
Contextual Info: VOL 2 インダストリアル・シグナルチェーン 高性能アナログ IC 産業用システムには高精度で柔軟性、信頼性の高い半導体デバイス が必要です。リニアテクノロジーは幅広いラインナップの高性能アナ

S1227

Abstract: S1227-1010BQ S1227-1010BR S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR s12271010bq
Contextual Info: PHOTODIODE Si photodiode S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Suppressed IR sensitivity l Low dark current l Analytical equipment l Optical measurement equipment, etc.

1010BQ

Abstract: S1227 S1227-1010BQ S1227-1010BR S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR
Contextual Info: PHOTODIODE Si photodiode S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Suppressed IR sensitivity l Low dark current l Analytical equipment l Optical measurement equipment, etc.

j633

Abstract: SIS10
Contextual Info: C i D h n + r k f t i r k r i â o P to Visible Range, 1 O l r n O l O U l O O C S \for Precision Photometry, Suppressed IR Sensitivity, Type No. Dimensional: Ac jve Effective Outline ! package Active (P.46 to 49 /; Area Size • Window i Material ’ (m m )

LT6242 Diode

Abstract: LT6242 LT6241 LTCGF bf862 photodiode jfet folded cascode jfet cascode S1227-1010BQ folded cascode second stage LTC6244
Contextual Info: LTC6244 Dual 50MHz, Low Noise, Rail-to-Rail, CMOS Op Amp U FEATURES DESCRIPTIO • The LTC 6244 is a dual high speed, unity-gain stable CMOS op amp that features a 50MHz gain bandwidth, 40V/µs slew rate, 1pA of input bias current, low input capacitance and

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

ups PURE SINE WAVE schematic diagram

Abstract: BF862 spice model 24V lead acid smart battery charger using pic schematic diagram for offline UPS free laptop Lithium-ion battery diagram schematic PIC lead acid battery charger 1010BQ 3 phase ups PURE SINE WAVE schematic diagram PKGS MURATA cell phone detector conclusion
Contextual Info: LINEAR TECHNOLOGY DECEMBER 2005 IN THIS ISSUE… COVER ARTICLE A Better Way to Push Your Buttons.1 Victor Fleury Issue Highlights .2 Linear Technology in the News….2 DESIGN FEATURES Fast CMOS Op Amp Challenges

S8558

Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ

Contextual Info: Q i D b / v t/ trf ir t r ia e Ol rnoioaioaes Dimensional Type No. í ’Ó É in í* Package P.44-46 / Window Material'*(mm) i UV t0 V's 'kle Range, \for Precision Photometry, Suppressed IR Sensitivity Active Response Aro-T Range Peak Sensitivity Wavelength

Contextual Info: SPICE Device Model Si4102DY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

S1722-01

Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
Contextual Info: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR

S3407

Abstract: S4036 S5533
Contextual Info: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!

CRHV2512AF1007G

Abstract: jfet folded cascode piezoelectric shock sensor folded cascode op amp PKGS MURATA bf862 photodiode PKGS-00LD PKGS-00 GN16 LTC6241
Contextual Info: DESIGN FEATURES Fast CMOS Op Amp Challenges Bipolar Amps on All Key Specs by John Wright and Glen Brisebois Introduction The LTC6241 dual and LTC6242 quad CMOS op amps compete headon with bipolar op amps in noise, speed, offset voltage, and offset drift, while maintaining superior low input

S5532

Contextual Info: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral