S092 Search Results

transistor k 316

Abstract: E6327 k 1094 transistor
Contextual Info: SIPMOS Small-Signal Transistor BSP 316 ● VDS − 100 V ● ID − 0.65 A ● RDS on 2.2 Ω ● VGS(th) − 0.8 V … − 2.0 V ● P channel ● Enhancement mode ● Logic level Type Ordering Code Tape and Reel Information BSP 316 Q67000-S092 Pin Configuration

Vishay DaTE CODE tsop-6

Abstract: si3410
Contextual Info: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

95xxx

Abstract: si3434 si3495
Contextual Info: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21

SI7288

Contextual Info: New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 20 0.022 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Si2333CDS

Abstract: Si2333CDS-T1-GE3 Si2333C
Contextual Info: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition

R 2561

Abstract: DG403DJ DG403 DG403DY-T1-E3 DG401 DG405 DG405DJ DG405DY DG405DY-T1 DG403DY-E3
Contextual Info: DG401, DG403, DG405 Vishay Siliconix Low-Power, High-Speed CMOS Analog Switches DESCRIPTION FEATURES The DG401, DG403, DG405 monolithic analog switches were designed to provide precision, high performance switching of analog signals. Combining low power 0.35 µW,

Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability

Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition

SiHP22N60S-E3

Abstract: SiHP22N60S
Contextual Info: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability

Si3853DV

Abstract: Si3853DV-T1-E3 Si3853DV-T1-GE3
Contextual Info: Si3853DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus

SiA425EDJ

Abstract: bmx - 01 SiA425EDJ-T1-GE3
Contextual Info: SiA425EDJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = - 4.5 V - 4.5a 0.065 at VGS = - 3.6 V - 4.5a 0.080 at VGS = - 2.5 V - 4.5a 0.120 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21

Si9731

Abstract: Si9731DB Si9731DQ TSSOP-16
Contextual Info: Si9731 Vishay Siliconix µP Controlled Battery Charger for 1-Cell Li-ion or 1-Cell to 3-Cell NiCd/NiMH Batteries DESCRIPTION FEATURES Si9731 is a chemistry independent battery charger designed to pulse charge 1-cell to 3-cell NiCd/NiMH or 1-cell Li-ion batteries. Battery charging is accomplished under direct

Si3951DV-T1-GE3

Abstract: Si3951DV Si3951DV-T1-E3
Contextual Info: Si3951DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 2.7 0.205 at VGS = - 2.5 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SUP40P10-43

Abstract: 4600 mosfet inverter SUP40P10-43-GE3
Contextual Info: New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100

SC-75

Contextual Info: New Product SMMB912DK Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-75

SMM2302CDS

Abstract: SMM2302CDS-T1-GE3 Vishay Medical
Contextual Info: SMM2302CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow 20 RDS(on) (Ω) at VGS = 4.5 V 0.057 RDS(on) (Ω) at VGS = 2.5 V 0.075 ID (A) • Halogen-free According to IEC 61249-2-21

Si4487DY-T1-GE3

Abstract: si4487 65473
Contextual Info: New Product Si4487DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0205 at VGS = - 10 V - 11.6 0.0375 at VGS = - 4.5 V - 8.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SiHB22N60S-E3

Abstract: SIHB22N60S
Contextual Info: SiHB22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability

SQJ463EP-T1-GE3

Abstract: SQJ463 SQJ463EP NC2030
Contextual Info: SQJ463EP Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) at VGS = - 10 V 0.010 RDS(on) (Ω) at VGS = - 4.5 V 0.015 ID (A) - 11 Configuration Single PowerPAK SO-8L Single S m 5m 6.1 • Halogen-free According to IEC 61249-2-21

Si3451DV-T1-E3

Abstract: 80pf55 Si3451
Contextual Info: Si3451DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 2.8 0.205 at VGS = - 2.5 V - 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SQ2360EES

Abstract: SQ2360EES-T1-GE3
Contextual Info: SQ2360EES Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd

si4829

Contextual Info: Si4829DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.215 at VGS = - 4.5 V -2 0.320 at VGS = - 2.5 V -2 Qg (Typ.) 2.6 nC SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21

65176

Abstract: SiA519EDJ SC-70-6 SiA519EDJ-T1-GE3
Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V