S092 Search Results

S092 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
S0921-46R		Harwin	RFI SHIELD CLIP CORNER TIN SMD	Original	PDF	93.61KB

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MEC Switches A/S 1SS09-22.5 CAP TACTILE ROUND BLACK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SS09-22.5	Bulk	8,081		1	1 $0.32 10 $0.29 100 $0.27 1000 $0.24 10000 $0.22	Buy Now
Newark	1SS09-22.5	Bulk	487		10	1 - 10 $0.36 100 $0.33 1000 $0.28 10000 $0.28	Buy Now
Socle Technology Corporation GP1S092HCPIF SENSOR OPT SLOT PHOTOTRANS 4SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	GP1S092HCPIF	Digi-Reel	2,266		1	1 $0.62 10 $0.52 100 $0.44 1000 $0.38 10000 $0.38	Buy Now
	GP1S092HCPIF	Cut Tape	2,266		1	1 $0.62 10 $0.52 100 $0.44 1000 $0.38 10000 $0.38	Buy Now
	GP1S092HCPIF	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.33	Buy Now
New Advantage Corporation	GP1S092HCPIF		4,000		1	1 - 10 - 100 - 1000 - 10000 $0.44	Buy Now
Visual Communications Company LCS_092_CTP LIGHTPIPE ASSY THREADED SEALED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LCS_092_CTP	Bulk	1,504		1	1 $4.49 10 $3.29 100 $2.46 1000 $2.03 10000 $1.89	Buy Now
IBS Electronics	LCS_092_CTP		9,950		10	1 - 10 $4.41 100 $3.20 1000 $2.64 10000 $2.56	Buy Now
Essentra Components 12SWS0920B SHOULDER WASHER, .217 ID, .413 O
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	12SWS0920B	Bag	1,000		1	1 $0.32 10 $0.24 100 $0.19 1000 $0.16 10000 $0.16	Buy Now
OMRON Electronic Components XM2S-0923 CONN BACKSHELL 9P 90DEG SHLD SLV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XM2S-0923	Tray	364		1	1 $12.30 10 $9.65 100 $9.65 1000 $9.65 10000 $9.65	Buy Now
Newark	XM2S-0923	Bulk	600		13	1 - 10 $12.17 100 $11.32 1000 $11.32 10000 $11.32	Buy Now

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S092 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor k 316 Abstract: E6327 k 1094 transistor Contextual Info: SIPMOS Small-Signal Transistor BSP 316 ● VDS − 100 V ● ID − 0.65 A ● RDS on 2.2 Ω ● VGS(th) − 0.8 V … − 2.0 V ● P channel ● Enhancement mode ● Logic level Type Ordering Code Tape and Reel Information BSP 316 Q67000-S092 Pin Configuration	Original	Q67000-S092 E6327: OT-223 transistor k 316 E6327 k 1094 transistor	PDF
Vishay DaTE CODE tsop-6 Abstract: si3410 Contextual Info: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay DaTE CODE tsop-6 si3410	PDF
95xxx Abstract: si3434 si3495 Contextual Info: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21	Original	Si3495DV 2002/95/EC Si3495DV-T1-E3 Si3495DV-T1-GE3 95xxx 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 95xxx si3434 si3495	PDF
SI7288 Contextual Info: New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 20 0.022 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	Si7288DP 2002/95/EC Si7288DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI7288	PDF
Si2333CDS Abstract: Si2333CDS-T1-GE3 Si2333C Contextual Info: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si2333CDS 2002/95/EC O-236 OT-23) Si2333CDS-T1-E3 Si2333CDS-T1-GE3 11-Mar-11 Si2333C	PDF
R 2561 Abstract: DG403DJ DG403 DG403DY-T1-E3 DG401 DG405 DG405DJ DG405DY DG405DY-T1 DG403DY-E3 Contextual Info: DG401, DG403, DG405 Vishay Siliconix Low-Power, High-Speed CMOS Analog Switches DESCRIPTION FEATURES The DG401, DG403, DG405 monolithic analog switches were designed to provide precision, high performance switching of analog signals. Combining low power 0.35 µW,	Original	DG401, DG403, DG405 DG405 DG401 11-Mar-11 R 2561 DG403DJ DG403 DG403DY-T1-E3 DG405DJ DG405DY DG405DY-T1 DG403DY-E3	PDF
Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si5858DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability	Original	SiHP22N60S O-220 2002/95/EC SiHP22N60S-E3 18-Jul-08	PDF
Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si5858DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SiHP22N60S-E3 Abstract: SiHP22N60S Contextual Info: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability	Original	SiHP22N60S O-220 2002/95/EC SiHP22N60S-E3 18-Jul-08	PDF
Si3853DV Abstract: Si3853DV-T1-E3 Si3853DV-T1-GE3 Contextual Info: Si3853DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus	Original	Si3853DV 2002/95/EC Si3853DV-T1-E3 Si3853DV-T1-GE3 18-Jul-08	PDF
SiA425EDJ Abstract: bmx - 01 SiA425EDJ-T1-GE3 Contextual Info: SiA425EDJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = - 4.5 V - 4.5a 0.065 at VGS = - 3.6 V - 4.5a 0.080 at VGS = - 2.5 V - 4.5a 0.120 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21	Original	SiA425EDJ SC-70 2002/95/EC SC-70-6L-Single 18-Jul-08 bmx - 01 SiA425EDJ-T1-GE3	PDF
Si9731 Abstract: Si9731DB Si9731DQ TSSOP-16 Contextual Info: Si9731 Vishay Siliconix µP Controlled Battery Charger for 1-Cell Li-ion or 1-Cell to 3-Cell NiCd/NiMH Batteries DESCRIPTION FEATURES Si9731 is a chemistry independent battery charger designed to pulse charge 1-cell to 3-cell NiCd/NiMH or 1-cell Li-ion batteries. Battery charging is accomplished under direct	Original	Si9731 Si9731 18-Jul-08 Si9731DB Si9731DQ TSSOP-16	PDF
Si3951DV-T1-GE3 Abstract: Si3951DV Si3951DV-T1-E3 Contextual Info: Si3951DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 2.7 0.205 at VGS = - 2.5 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si3951DV 2002/95/EC Si3951DV-T1-E3 Si3951DV-T1-GE3 18-Jul-08	PDF

SUP40P10-43 Abstract: 4600 mosfet inverter SUP40P10-43-GE3 Contextual Info: New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100	Original	SUP40P10-43 2002/95/EC O-220AB SUP40P10-43-GE3 18-Jul-08 SUP40P10-43 4600 mosfet inverter SUP40P10-43-GE3	PDF
SC-75 Contextual Info: New Product SMMB912DK Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-75	Original	SMMB912DK SC-75 2002/95/EC SC75-6L-Dual 18-Jul-08 SC-75	PDF
SMM2302CDS Abstract: SMM2302CDS-T1-GE3 Vishay Medical Contextual Info: SMM2302CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow 20 RDS(on) (Ω) at VGS = 4.5 V 0.057 RDS(on) (Ω) at VGS = 2.5 V 0.075 ID (A) • Halogen-free According to IEC 61249-2-21	Original	SMM2302CDS 2002/95/EC O-236 OT-23) 18-Jul-08 SMM2302CDS SMM2302CDS-T1-GE3 Vishay Medical	PDF
Si4487DY-T1-GE3 Abstract: si4487 65473 Contextual Info: New Product Si4487DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0205 at VGS = - 10 V - 11.6 0.0375 at VGS = - 4.5 V - 8.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4487DY 2002/95/EC Si4487DY-T1-GE3 18-Jul-08 si4487 65473	PDF
SiHB22N60S-E3 Abstract: SIHB22N60S Contextual Info: SiHB22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability	Original	SiHB22N60S O-263) 2002/95/EC SiHB22N60S-E3 18-Jul-08	PDF
SQJ463EP-T1-GE3 Abstract: SQJ463 SQJ463EP NC2030 Contextual Info: SQJ463EP Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) at VGS = - 10 V 0.010 RDS(on) (Ω) at VGS = - 4.5 V 0.015 ID (A) - 11 Configuration Single PowerPAK SO-8L Single S m 5m 6.1 • Halogen-free According to IEC 61249-2-21	Original	SQJ463EP 2002/95/EC AEC-Q101 SQJ463EP-T1-GE3 18-Jul-08 SQJ463EP-T1-GE3 SQJ463 SQJ463EP NC2030	PDF
Si3451DV-T1-E3 Abstract: 80pf55 Si3451 Contextual Info: Si3451DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 2.8 0.205 at VGS = - 2.5 V - 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si3451DV 2002/95/EC Si3451DV-T1-E3 Si3451DV-T1-GE3 18-Jul-08 80pf55 Si3451	PDF
SQ2360EES Abstract: SQ2360EES-T1-GE3 Contextual Info: SQ2360EES Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd	Original	SQ2360EES 2002/95/EC AEC-Q101 O-236 OT-23) OT-23 SQ2360Electual 18-Jul-08 SQ2360EES SQ2360EES-T1-GE3	PDF
si4829 Contextual Info: Si4829DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.215 at VGS = - 4.5 V -2 0.320 at VGS = - 2.5 V -2 Qg (Typ.) 2.6 nC SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21	Original	Si4829DY 2002/95/EC Si4829DY-T1-E3 18-Jul-08 si4829	PDF
65176 Abstract: SiA519EDJ SC-70-6 SiA519EDJ-T1-GE3 Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V	Original	SiA519EDJ 2002/95/EC SC-70-6 18-Jul-08 65176 SiA519EDJ-T1-GE3	PDF

S092 Search Results

S092 Datasheets (1)

S092 Price and Stock

MEC Switches A/S 1SS09-22.5

Socle Technology Corporation GP1S092HCPIF

Visual Communications Company LCS_092_CTP

Essentra Components 12SWS0920B

OMRON Electronic Components XM2S-0923

S092 Datasheets Context Search

transistor k 316

Vishay DaTE CODE tsop-6

95xxx

SI7288

Si2333CDS

R 2561

SiHP22N60S-E3

Si3853DV

SiA425EDJ

Si9731

Si3951DV-T1-GE3

SUP40P10-43

SC-75

SMM2302CDS

Si4487DY-T1-GE3

SiHB22N60S-E3

SQJ463EP-T1-GE3

Si3451DV-T1-E3

SQ2360EES

si4829

65176