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SI4487DY Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4487DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 11.6A 8-SOIC	Original	PDF		10

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Vishay Intertechnologies


Vishay Intertechnologies SI4487DY-T1-GE3 Trans MOSFET P-CH 30V 11.6A 8-Pin SOIC N T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4487DY-T1-GE3		999		1	1 $2.40 10 $1.80 100 $1.49 1000 $0.90 10000 $0.90	Buy Now
Quest Components ()	SI4487DY-T1-GE3		799			1 $3.06 10 $3.06 100 $3.06 1000 $1.15 10000 $1.15	Buy Now
	SI4487DY-T1-GE3		799			1 $3.06 10 $3.06 100 $3.06 1000 $1.15 10000 $1.15	Buy Now
	SI4487DY-T1-GE3		799			1 $3.20 10 $3.20 100 $3.20 1000 $1.00 10000 $1.00	Buy Now
	SI4487DY-T1-GE3		799			1 $3.20 10 $3.20 100 $3.20 1000 $1.00 10000 $1.00	Buy Now

SI4487DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si4487DY-T1-GE3 Abstract: si4487 65473 Contextual Info: New Product Si4487DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0205 at VGS = - 10 V - 11.6 0.0375 at VGS = - 4.5 V - 8.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4487dy 2002/95/ec si4487dy-t1-ge3 18-jul-08 +2si4487 65473	PDF
Contextual Info: New Product Si4487DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0205 at VGS = - 10 V - 11.6 0.0375 at VGS = - 4.5 V - 8.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4487dy 2002/95/ec si4487dy-t1-ge3 2011/65/eu +112-mar-12	PDF
74167 Abstract: 6513 AN609 Contextual Info: Si4487DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	si4487dy an609 11-jan-10 74167 +16513	PDF
F 2452 mosfet Abstract: F 2452 Contextual Info: SPICE Device Model Si4487DY Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si4487dy 18-jul-08 f 2452 mosfet f 2452	PDF
Contextual Info: New Product Si4487DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0205 at VGS = - 10 V - 11.6 0.0375 at VGS = - 4.5 V - 8.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4487dy 2002/95/ec si4487dy-t1-ge3 11-mar-11	PDF
Contextual Info: New Product Si4487DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0205 at VGS = - 10 V - 11.6 0.0375 at VGS = - 4.5 V - 8.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4487dy 2002/95/ec si4487dy-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: New Product Si4487DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0205 at VGS = - 10 V - 11.6 0.0375 at VGS = - 4.5 V - 8.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4487dy 2002/95/ec si4487dy-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: New Product Si4487DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0205 at VGS = - 10 V - 11.6 0.0375 at VGS = - 4.5 V - 8.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4487dy 2002/95/ec si4487dy-t1-ge3 18-jul-08	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF