S0394 Search Results

JM-S03943A-B

Abstract: D-12 JM-S039
Contextual Info: 深圳市佳美光电电子有限公司 产品规格书 JM-S03943A-B DATA SHEET 制表 审核 制图 批准 编号 页数 日期 电话 0755-83937281,83937283 传真 0755-83937036 网址 Http://www.led-china.com 邮箱 Sales@led-china.com 深圳市佳美光电电子有限公司

JM-S039

Contextual Info: 深圳市佳美光电电子有限公司 产品规格书 JM-S03941A-B DATA SHEET 制表 审核 制图 批准 编号 页数 日期 电话 0755-83937281,83937283 传真 0755-83937036 网址 Http://www.led-china.com 邮箱 Sales@led-china.com 深圳市佳美光电电子有限公司

DP-12

Abstract: JM-S039
Contextual Info: 深圳市佳美光电电子有限公司 产品规格书 JM-S03941E-F DATA SHEET 制表 审核 制图 批准 编号 页数 日期 电话 0755-83937281,83937283 传真 0755-83937036 网址 Http://www.led-china.com 邮箱 Sales@led-china.com 深圳市佳美光电电子有限公司

3491C

Abstract: JM-S03941C-D JM-S039
Contextual Info: 深圳市佳美光电电子有限公司 产品规格书 JM-S03941C-D DATA SHEET 制表 审核 制图 批准 编号 页数 日期 电话 0755-83937281,83937283 传真 0755-83937036 网址 Http://www.led-china.com 邮箱 Sales@led-china.com 深圳市佳美光电电子有限公司

JM-S039

Contextual Info: 深圳市佳美光电电子有限公司 产品规格书 JM-S03943C-D DATA SHEET 制表 审核 制图 批准 编号 页数 日期 电话 0755-83937281,83937283 传真 0755-83937036 网址 Http://www.led-china.com 邮箱 Sales@led-china.com 深圳市佳美光电电子有限公司

03942B

Abstract: JM-S03942A-B JM-S039
Contextual Info: 深圳市佳美光电电子有限公司 产品规格书 JM-S03942A-B DATA SHEET 制表 审核 制图 批准 编号 页数 日期 电话 0755-83937281,83937283 传真 0755-83937036 网址 Http://www.led-china.com 邮箱 Sales@led-china.com 深圳市佳美光电电子有限公司

MOSFET SOT-23 marking code M2

Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

5302D

Contextual Info: DG428, DG429 Vishay Siliconix Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers DESCRIPTION FEATURES The DG428, DG429 analog multiplexers have on-chip address and control latches to simplify design in microprocessor based applications. Break-before-make

si1922

Abstract: SI1922EDH
Contextual Info: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21

SQ2303ES

Abstract: marking code 604 SOT23
Contextual Info: SQ2303ES www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC

SQ2318ES

Contextual Info: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested

SQ2351ES

Contextual Info: SQ2351ES www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V 0.115 RDS(on) () at VGS = - 2.5 V 0.205 ID (A) - 3.2 Configuration S 1 3 S • Material categorization:

marking L4 mosfet sot23

Abstract: SI2304
Contextual Info: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

si2301

Contextual Info: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si2303CDS

Contextual Info: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SI2333DS-T1-E3

Contextual Info: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

TP0610K-T1-E

Abstract: TP0610K-T1-E3
Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

DG201BDQ-T1-E3

Contextual Info: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon

Si2315BDS-T1-E3

Contextual Info: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*

SI1013CX

Abstract: 71377
Contextual Info: Si1013CX Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.760 at VGS = - 4.5 V - 0.45 1.040 at VGS = - 2.5 V - 0.40 1.5 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition

SI1443EDH

Abstract: marking code bt S1209
Contextual Info: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET

N-Channel mosfet sot-363

Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)

si2329

Abstract: SI2329DS
Contextual Info: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8

Contextual Info: Si1926DL www.vishay.com Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) MAX. ID (A) 1.4 at VGS = 10 V 0.37 3 at VGS = 4.5 V 0.25 Qg (nC) TYP. 0.47 D1 6 • 100 % Rg tested • ESD protected: 1800 V • Material categorization: