SI2304 Search Results

marking L4 mosfet sot23

Abstract: SI2304
Contextual Info: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

SI2304DS marking code SOT-23

Abstract: A4* marking code A4 MARKING CODE
Contextual Info: SÌ2304DS VISHAY Siliconix ▼ N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) I d (A) 0.117 @ VGS = 10 V 2.5 0.190 @ VGS = 4.5 V 2.0 30 TO-236 (SOT-23) Top View Si2304DS (A4)* *Marking Code A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N L E S S O T H E R W IS E N O T E D )

Si2304BDS

Abstract: Si2304BDS-T1-E3
Contextual Info: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View

4614 mosfet

Abstract: Si2304DDS A 0412 MOSFET MOSFET 4614 AN609
Contextual Info: Si2304DDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2304 Features • • • • • • • • • N-Channel Enhancement Mode Lead Free Finish/RoHS Compliant "P" Suffix designates

SI2304DS-T1-E3

Abstract: SI2304BDS-T1-E3 Si2304BDS Si2304BDS-T1 Si2304DS Si2304DS-T1 n-Channel 12-V D-S MOSFET sot-23 6VSD
Contextual Info: Specification Comparison Vishay Siliconix Si2304BDS vs. Si2304DS Description: N-Channel, 30 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2304BDS-T1-E3 Replaces Si2304DS-T1-E3 Si2304BDS-T1 Replaces Si2304DS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Contextual Info: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

4606 mosfet

Abstract: 4606 A 4606 transistor 4606 mosfet AN609 Si2304BDS
Contextual Info: Si2304BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si2304BDS

Abstract: Si2304BDS-T1
Contextual Info: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1—E3

Contextual Info: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Si2304BDS

Contextual Info: SPICE Device Model Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2304DDS

Abstract: SI2304DDS-T1-GE3 n-Channel 12-V D-S MOSFET sot-23
Contextual Info: New Product Si2304DDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 3.6 0.075 at VGS = 4.5 V 3.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si2304DDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 3.6 0.075 at VGS = 4.5 V 3.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2304 Features • • • • • • • • • N-Channel Enhancement Mode Lead Free Finish/RoHS Compliant "P" Suffix designates

Si2304DS

Abstract: SI2304DS marking code SOT-23
Contextual Info: Si2304DS Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.117 @ VGS = 10 V 2.5 0.190 @ VGS = 4.5 V 2.0 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304DS (A4)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: MCC TM Micro Commercial Components Features • • • • • • • • • •
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2304 Halogen free available upon request by adding suffix "-HF"

Si2304BDS

Contextual Info: SPICE Device Model Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2304DS

Abstract: 70901
Contextual Info: SPICE Device Model Si2304DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si2304DDS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: SPICE Device Model Si2304DDS www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Si2304BDS

Abstract: Si2304BDS-T1-E3
Contextual Info: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View

Si2304DDS

Contextual Info: New Product Si2304DDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 3.6 0.075 at VGS = 4.5 V 3.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si2304DDS

Contextual Info: SPICE Device Model Si2304DDS Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SI2304DS

Contextual Info: SPICE Device Model SI2304DS N-Channel Enhancement-Mode Transistors Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range