S-MINI 2-PIN PACKAGE Search Results

Contextual Info: PC4D10SNIP0F Series PC4D10SNIP0F Series High Speed 10Mb/s, High CMR Mini-flat 2-channel Package ∗OPIC Photocoupler • Description ■Agency approvals/Compliance PC4D10SNIP0F Series contains a LED optically coupled to an OPIC. It is packaged in a 8 pin mini-flat 2-ch output .

MA2ZD02

Contextual Info: Schottky Barrier Diodes SBD MA2ZD02 Silicon epitaxial planar type Unit : mm For high-frequency rectification A 0.625 0.3 0.5 ± 0.1 • Mini package (S-mini type 2-pin) • Reverse current (DC value) VR is low 1 0.16 − 0.06 2 Symbol Rating Unit VR 20 V

MA2ZD02

Contextual Info: Schottky Barrier Diodes SBD MA2ZD02 Silicon epitaxial planar type Unit : mm For high-frequency rectification A 0.625 0.3 0.5 ± 0.1 • Mini package (S-mini type 2-pin) • Reverse current (DC value) VR is low 1 0.16 − 0.06 2 Symbol Rating Unit VR 20 V

transistor NEC D 586

Abstract: sn 7441 ic nec 2701
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consum ption and high gain | S 2 i e |2 = | S 2 i e |2 • 11.5 dB TYP. @ = 10.5 dB TYP. @ Vce =

Contextual Info: 3-Pin Super Mini Package S-Mini Package Outline Dimensions Outline Dimensions Unit: mm 2.9 ±0.2 0.16 +0.1 –0.06 0.4 +0.1 –0.05 1.5 +0.25 –0.15 2.5 +0.5 –0.3 1.1 +0.2 –0.1 1 0.3 3 2 0.95 0 ~0.1 0.95 Land Pattern Example Unit: mm 2.4 1.0 0.8 0.95

5223l

Abstract: M5233
Contextual Info: MITSUBISHI <LINEAR ICs> M 5 2 3 3 L , P, FR DUAL COMPARATOR DESCRIPTION The M 5223L,P,FP is a semiconductor circuit for a compara­ tor designed to operate over a wide supply voltage range from 2 to 36V from a single power supply, with two circuits in each 8-pin S IP and 8-pin DIP and 8-pin mini flat package. A

sem 5025

Abstract: ic 4440 for audio amplification pe 5571 NEC 9736
Contextual Info: PRELIMINARY DATA SHEET S ilico n T ransistor juPA835TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ¿iPA835TF has two different built-in transistors (Q1

MA2ZD14

Contextual Info: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits A 0.625 0.3 0.5 ± 0.1 • S-mini type 2-pin package • Low forward rise voltage VF (VF < 0.4 V) 1 2 + 0.1 Symbol Rating Unit Reverse voltage (DC)

MA2ZD14

Abstract: marking k 2pin
Contextual Info: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits A 0.625 0.3 0.5 ± 0.1 • S-mini type 2-pin package • Low forward rise voltage VF (VF < 0.4 V) 1 2 + 0.1 Symbol Rating Unit Reverse voltage (DC)

marking b1

Abstract: MAZF036 MAZF091
Contextual Info: Panasonic Z e n e r D iodes MAZF000 Serie s Silicon planer type Unit : mm Surge absorption circuit Cathode • Features Anode -W - • S-Mini type package 2-pin • No rank classification (Vz= 3.3 to 12V) si — Absolute Maximum Ratings (Ta= 25°C) Parameter

Contextual Info: ANALOG DEVICES LC2M 0 S 1 2-Bit, Serial 6 |xs ADC in 8-Pin Package AD7893 FEATURES Fast 12-Bit ADC with 6 fts Conversion Time 8-Pin Mini-DIP and SOIC Single Supply Operation High Speed, Easy-to-Use, Serial Interface On-Chip Track/Hold Amplifier Selection of Input Ranges

Contextual Info: DS1012 D S1012 2-in-1 Sub-M iniature Silicon Delay Line with Logic DALLAS s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • All-silicon time delay • 53 |iW max. CM O S quiescent mode • Surface mount 8-pin mini-SOIC and standard 8-pin r\ir> IN1 C 1 e

Contextual Info: DS1012 PRELIMINARY D S 10 1 2 2- in -1 Sub-M iniature Silicon Delay Line with Logic DALLAS SEMICONDUCTOR FEATURES PIN DESCRIPTION • All-silicon time delay IN1 [ • 53 uW max. CMOS quiescent mode O U T3[ O U T l[ • Surface mount 8-pin mini-SOIC and standard

BC856BW

Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BC856W; BC857W FEATURES PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 80) 1 base • S-mini package. 2 emitter 3 collector APPLICATIONS • General purpose switching and amplification.

RLR4002

Abstract: RLR4001 1SR154 1SR154-400 1SR154-600 RLR4003 RLR4004 rectifier part no
Contextual Info: lumm Rectifier Diodes S M Various series are available in pin 2 mini power molded and glass sealed leadless packages. 1SR154 series will find wide applications on vehicle devices and small power supplies. •G eneral Purpose Rectifier Diodes Absolute maximum ratings Ta= 258C

MA2Z785

Contextual Info: Schottky Barrier Diodes SBD MA2Z785 Silicon epitaxial planar type Unit : mm • S-mini type 2-pin package, allowing high-density mounting • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short

marking nt gain stage GaAs MMIC AMPLIFIER

Abstract: GN02035B
Contextual Info: GaAs MMIC GN02035B GaAs IC with built-in ferroelectric Unit : mm 0.12 +0.05 −0.02 1.25±0.1 R0.2 • Super miniature S-Mini 6-pin package (2 125 size) • Receiver mixer : Low distortion with local amplifier 1 2 0.65 0.425 ue pl d in an c se ed lud pl

RLR4001

Contextual Info: nonm Rectifying Diodes S M D Various serieses are available in pin 2 mini power molded and glass sealed leadless packages. 1SR154 series will find wide applications on vehicle devices and small power supplies. •G eneral Purpose Rectifier Diodes Absolute maximum ratings Ta = 25*C

MAZU000

Abstract: MAZU190 MAZU200 MAZU200-H MAZU200-L MAZU220 MAZU220-H MAZU220-L
Contextual Info: Zener Diodes MAZU000 Series MA5Z000 Series Silicon planar type Unit : mm For constant voltage, constant-current, waveform clipper and surge absorption circuit 0.7±0.1 1.25±0.1 0.35±0.1 1 1.7±0.1 2 0.5±0.1 0.4±0.1 5° • S-mini type 2-pin package • High breakdown voltage zener diode

marking F1 2pin

Contextual Info: MA2ZD14 Silicon epitaxial planar type For high-speed switching circuits Unit : mm 0.7±0.1 1.25±0.1 0.35±0.1 • Features 1 • S-mini type 2-pin package • Low forward rise voltage V F V F < 0.4 V 2 0.5±0.1 0.16+0.1 –0.06 5˚ Symbol Rating Unit VR

transistor d 1933

Abstract: transistor marking code p2T PMST4403 VC80 marking code P2T
Contextual Info: Hi Philips Semiconductors N bbSBTBl AHER 0 0 2 5 T 47 b 47 HIAPX PH ILIPS/D ISCR ETE b?E Product specification J> PNP switching transistor FEATURES PMST4403 PIN CONFIGURATION • S-mini package » High collector current. DESCRIPTION PNP silicon planar epitaxial

MA6S121

Abstract: MA6Z121 M2D marking
Contextual Info: Switching Diodes MA6Z121 MA6S121 Silicon epitaxial planar type Unit : mm For switching circuit 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Small S-mini type 6-pin package • Three isolated elements contained in one package, allowing highdensity mounting

7233A

Contextual Info: ANALOG DEVICES LCzM0S 12-Bit Serial Mini-DIP DACPORT AD7233 FEA TU R ES 12-Bit C M O S D A C with On-Chip Voltage Reference Output Amplifier -5 V to +5 V Output Range Serial Interface 300 kHz D AC Update Rate Sm all Size. 8-Pin Mini-DIP Nonlinearity: ±1/2 L SB T M!N to T MAX

Contextual Info: T a b l e of C o n t e n t s Delay Lines Family Single Tap 14 pin DIP P/N Delay Lines continued Page Family P/N 10 Tap 14 pin DIP high precision EP9430-XX EPA500-XX EPA810-XX EP9460-XX 2 3 4 5 4 pin Mini-SIL EPA426-XX EP9748-XX 6 7 14 pin DIP high precision