S-MINI 2-PIN PACKAGE Search Results

Contextual Info: PC4D10SNIP0F Series PC4D10SNIP0F Series High Speed 10Mb/s, High CMR Mini-flat 2-channel Package ∗OPIC Photocoupler • Description ■Agency approvals/Compliance PC4D10SNIP0F Series contains a LED optically coupled to an OPIC. It is packaged in a 8 pin mini-flat 2-ch output .

transistor NEC D 586

Abstract: sn 7441 ic nec 2701
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consum ption and high gain | S 2 i e |2 = | S 2 i e |2 • 11.5 dB TYP. @ = 10.5 dB TYP. @ Vce =

5223l

Abstract: M5233
Contextual Info: MITSUBISHI <LINEAR ICs> M 5 2 3 3 L , P, FR DUAL COMPARATOR DESCRIPTION The M 5223L,P,FP is a semiconductor circuit for a compara­ tor designed to operate over a wide supply voltage range from 2 to 36V from a single power supply, with two circuits in each 8-pin S IP and 8-pin DIP and 8-pin mini flat package. A

sem 5025

Abstract: ic 4440 for audio amplification pe 5571 NEC 9736
Contextual Info: PRELIMINARY DATA SHEET S ilico n T ransistor juPA835TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ¿iPA835TF has two different built-in transistors (Q1

MA2ZD14

Abstract: marking k 2pin
Contextual Info: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits A 0.625 0.3 0.5 ± 0.1 • S-mini type 2-pin package • Low forward rise voltage VF (VF < 0.4 V) 1 2 + 0.1 Symbol Rating Unit Reverse voltage (DC)

marking b1

Abstract: MAZF036 MAZF091
Contextual Info: Panasonic Z e n e r D iodes MAZF000 Serie s Silicon planer type Unit : mm Surge absorption circuit Cathode • Features Anode -W - • S-Mini type package 2-pin • No rank classification (Vz= 3.3 to 12V) si — Absolute Maximum Ratings (Ta= 25°C) Parameter

Contextual Info: ANALOG DEVICES LC2M 0 S 1 2-Bit, Serial 6 |xs ADC in 8-Pin Package AD7893 FEATURES Fast 12-Bit ADC with 6 fts Conversion Time 8-Pin Mini-DIP and SOIC Single Supply Operation High Speed, Easy-to-Use, Serial Interface On-Chip Track/Hold Amplifier Selection of Input Ranges

Contextual Info: DS1012 D S1012 2-in-1 Sub-M iniature Silicon Delay Line with Logic DALLAS s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • All-silicon time delay • 53 |iW max. CM O S quiescent mode • Surface mount 8-pin mini-SOIC and standard 8-pin r\ir> IN1 C 1 e

MA2Z785

Abstract: MA785
Contextual Info: Schottky Barrier Diodes SBD MA2Z785 (MA785) Silicon epitaxial planar type Unit : mm • S-mini type 2-pin package, allowing high-density mounting • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short

MA2Z785

Contextual Info: Schottky Barrier Diodes SBD MA2Z785 Silicon epitaxial planar type Unit : mm • S-mini type 2-pin package, allowing high-density mounting • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short

MAZU000

Abstract: MAZU190 MAZU200 MAZU200-H MAZU200-L MAZU220 MAZU220-H MAZU220-L
Contextual Info: Zener Diodes MAZU000 Series MA5Z000 Series Silicon planar type Unit : mm For constant voltage, constant-current, waveform clipper and surge absorption circuit 0.7±0.1 1.25±0.1 0.35±0.1 1 1.7±0.1 2 0.5±0.1 0.4±0.1 5° • S-mini type 2-pin package • High breakdown voltage zener diode

marking F1 2pin

Contextual Info: MA2ZD14 Silicon epitaxial planar type For high-speed switching circuits Unit : mm 0.7±0.1 1.25±0.1 0.35±0.1 • Features 1 • S-mini type 2-pin package • Low forward rise voltage V F V F < 0.4 V 2 0.5±0.1 0.16+0.1 –0.06 5˚ Symbol Rating Unit VR

7233A

Contextual Info: ANALOG DEVICES LCzM0S 12-Bit Serial Mini-DIP DACPORT AD7233 FEA TU R ES 12-Bit C M O S D A C with On-Chip Voltage Reference Output Amplifier -5 V to +5 V Output Range Serial Interface 300 kHz D AC Update Rate Sm all Size. 8-Pin Mini-DIP Nonlinearity: ±1/2 L SB T M!N to T MAX

Contextual Info: T a b l e of C o n t e n t s Delay Lines Family Single Tap 14 pin DIP P/N Delay Lines continued Page Family P/N 10 Tap 14 pin DIP high precision EP9430-XX EPA500-XX EPA810-XX EP9460-XX 2 3 4 5 4 pin Mini-SIL EPA426-XX EP9748-XX 6 7 14 pin DIP high precision

3sk269

Contextual Info: 3SK269 High Frequency FETs 3SK269 Silicon N-Channel 4-pin MOS Unit : mm For VHF amplification 2.1±0.1 1.25±0.1 0.425 ● Downsizing of sets by S-mini power package and automatic insertion 3 2 4 1 0.3±0.1 Large power gain PG 0.65 ● 1.3±0.1 Low noise-figure NF

Contextual Info: Philips Sem iconductors k b 53^31 ' N A f lE R 0 0 2 5 C1 E 7 fiS ^ ^B A P X P H IL IP S /D IS C R E T E P roduct specification b7E D PNP general purpose transistor FEATURES PMSS3906 PIN CONFIGURATION • S-mini package. DESCRIPTION PNP transistor in a plastic SOT323

3sk271

Contextual Info: 3SK271 High Frequency FETs 3SK271 Silicon N-Channel 4-pin MOS Unit : mm For VHF-UHF amplification 2.1±0.1 1.25±0.1 0.425 ● Downsizing of sets by S-mini power package and automatic insertion 3 2 4 1 0.3±0.1 Large power gain PG 0.65 ● 1.3±0.1 Low noise-figure NF

Contextual Info: MA111 Zener Diodes MAZF000 Series Silicon planer type Unit : mm Surge absorption circuit No rank classification VZ= 3.3 to 12V 0.3 ● 0.5±0.1 S-Mini type package (2-pin) M Di ain sc te on na tin nc ue e/ d ● Anode 0.625 Cathode 1 0.4±0.1 1.7±0.1 0.7±0.1

3sk270

Contextual Info: 3SK270 High Frequency FETs 3SK270 Silicon N-Channel 4-pin MOS Unit : mm For VHF-UHF amplification 2.1±0.1 1.25±0.1 0.425 ● Downsizing of sets by S-mini power package and automatic insertion 3 2 4 1 0.3±0.1 Large power gain PG 0.65 ● 1.3±0.1 Low noise-figure NF

Contextual Info: GaAs MMIC GN02035B GaAs IC with built-in ferroelectric Unit : mm 0.12 +0.05 −0.02 1.25±0.1 M Di ain sc te on na tin nc ue e/ d • Features 0.1 4 2.1±0.1 5 6 0.425 0.2±0.05 1 2 0.65 0.425 R0.2 • Super miniature S-Mini 6-pin package (2 125 size) • Receiver mixer : Low distortion with local amplifier

GN04022N

Contextual Info: GaAs MMIC GN04022N GaAs N-Channel IC 0.2±0.05 5 4 5° • Low insertion • High isolation • S-Mini type 6-pin package 0.2±0.1 • Features 1 2 3 0.65 (0.65) 1.3±0.1 2.0±0.1 ■ Absolute Maximum Ratings Ta = 25°C Unit Supply voltage VDD 8 V Control current

LA 5530

Abstract: c 4977 transistor em 223 IC AT 6884 TRANSISTOR NPN 16085
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4959 THIN -TYPE SMALL MINI MOLD P A C K A G E D R A W IN G S (Unit: m m ) FEA TU R E S • Low noise and high gain

Contextual Info: [2] The L-MOS Series 1. Features of the L-MOS Series 1 The L-M OS series are sm all-package SM D type devices: T C 7 S x x F U , T C 7 S H x x F U , T C 7 S L x x F U Series. 2.0 x 1.25 x 0.9m m ultra super-mini 5-pin package. T C 4S xxF , T C 7 S x x F , T C 7 S H x x F , T C 7 S L x x F Series.

Contextual Info: Diodes # AM A5Z Series S Mini 2 Pin Type (D3 Ir max. Vr (M ) (V) MA5Z200 1 160 MA5Z220 1 176 MA5Z240 1 192 MA52270 1 MA5Z300 MA5Z330 Type No. ★Under development Zener Diodes V z Sz typ. (m V /t) min. (V) typ. (V) max. (V) 0.1 190 200 220 0.1 210 220 240