C7031 Search Results

5.9v zener

Abstract: MA3068 C100 MAZK068D
Contextual Info: MA111 Zener Diodes Composite Elements MAZK068D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 3 2 +0.1 0.16 -0.06 0 to 0.1 0.8 1.1 -0.1 +0.2

Contextual Info: Panasonic Z e n e r D io d e s C o m p o s ite E le m e n ts MAZK120D Silicon planer type Constant voltage, constant current, waveform cripper and surge absorption circuit • Features • Mini type package 5-pin • Four anode-common element wiring of MA3120

Contextual Info: Panasonic S chottky B arrier D iodes SBD MA2D760A Silicon epitaxial planer type Unit : mm For switching power supply I Features T O -220D p ack ag e I f (AV)= 5 A rectification p o ssib le V r = 100V guaranteed S in g le type Absolute Maximum Ratings (Ta=25°C)

SS-Mini 3

Contextual Info: Panasonic Z e n e r D io d e s MAZS0470G Silicon p la n er type Constant voltage, constant current, waveform cripper and surge absorption circuit • Features • SS-Mini type package 2-pin • Vz= 4.45 to 4.83V Absolute Maximum Ratings (Ta=25°C) Parameter

Contextual Info: Zener Diodes MAZT000H Series Silicon planar type 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Unit : mm For surge absorption circuit 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) 5° (0.375) 1.60±0.05 0.85+0.05 –0.03 2 (0.80) 1 0.27±0.02 0.70+0.05 –0.03 • For surge absorption circuit

Contextual Info: 2SK1259 Zener Diodes Composite Elements M A 4 Z 0 8 2 WA Silicon planer type ● SS-Mini type package 3-pin 1 wiring of MA8082 3 M Di ain sc te on na tin nc ue e/ d ● Anode-common Unit : mm 1.60±0.1 0.80±0.05 +0.05 • Features 0.80 0.28±0.05 1.60–0.03

MAZS0750H

Abstract: MAZS000 MAZS024 MAZS027 MAZS0270H MAZS0270L MAZS082 MAZS0820H MAZS0820L MAZS0820M
Contextual Info: Zener Diodes MAZS000 Series Silicon planar type 0.8 ± 0.1 0.30 ± 0.05 0.30 ± 0.05 Unit : mm For constant voltage, constant-current, waveform clipper and surge absorption circuit • Features 2 1 0.6 ± 0.1 • SS-mini type 2-pin package • Low noise type

TAIMAG HD 081 A

Abstract: ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627
Contextual Info: 5 4 3 2 1 G1S: MEROM/965-PM/ICH8-M/NB8P-GS BLOCK DIAGRAM CLOCK GEN CK505 ICS9LPR363CGLF-T D Merom CPU FAN + THERMAL SENSOR 478B uFCPGA VRAM CH.C GDDR3 *2 LVDS PAGE 45 PAGE 46 PAGE 50 FSB 800 MHz 136 FBGA PAGE 72 NVIDIA NB8P-GS CRT PAGE 3-6 VRAM CH.A GDDR3 *2

RTL8211E

Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

mcp67m

Abstract: MCP67MV MCP67D MCP67MV- A2 c5304 asus nvidia mcp67 MCP67 C9236 ricoh r5c833
Contextual Info: A B C D E A8N_A8Dc AMD/MCP67MV/MCP67D BLOCK DIAGRAM 1 BATTERY TYPE Sub block Diagram / BOM option 1 3S2P 64 POWER SEQENCE 2 . CPU CPU CAP 5 AMD Turion 64 F/G DDR2 533/667/800 SODIMM X2 3,4 LFB 2 LFB LFB HOST BUS DVI Dual CH. 47 CRT & TV CON 46 LFB VGA CON

C8816

Abstract: ricoh r5c833 C2335 IT8510 nvidia nb8 vga board l3404 asus CON61 R5600 D8103
Contextual Info: 5 4 3 2 1 AC_BAT_SYS 0925 +5VO 0925 + Q8200 R8209 4.7Ohm D + 1 D1_1 G1 8 2 D1_2 S1/D2_3 7 3 G2 S1/D2_2 6 4 S2 S1/D2_1 5 G D +1.05VO S Q8201 SI4800BDY @ JP8203 1 C8211 0.1UF/50V MLCC/+/-10% R8206 0Ohm C8213 4.7UF/6.3V MLCC/+/-10% 1 2 TPC28T T8209 TPC28T T8216

ISL9504

Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT

RTM875T-336

Abstract: J6801 J6806 Q4819 M51VA 8796G IT8502 RTM875T c2335 r RT8206
Contextual Info: 5 4 3 2 UX50 CLOCK GENERATOR RTM875T-336 Penryn SFF D 1 FAN & THERMAL SENSOR 956 uFCBGA D FSB 800MHz LVDS DDR2 SDRAM 800 MHz nVIDIA NB9M-GS CRT PCIE * 16 GS45 Express 1363 uFCBGA HDMI STANDARD DDR2 DIMM STANDARD DDR2 DIMM DMI 100MHz C C SATA 2.5" HDD USB CARD READER

ASUS

Abstract: fingerprint rs 306 nvidia nb8 vga board AT24C02B Q2400a Q4500 TMs 1122 NL IT8510 it8511 C5500
Contextual Info: A B C D E A8E/A8S Merom/GM965/PM965 BLOCK DIAGRAM 1 BATTERY TYPE Sub block Diagram / BOM option 1 3S2P 64 CLOCK GEN ICS9LPR363AGLF-T 29 CPU MEROM LFB 2 DVI CH. LFB LFB CPU CAP POWER SEQENCE 2 5 LFB HOST BUS Dual 47 CRT & TV 46 CON . 3,4 VGA CON Nvidia NB8x series

MAZF036

Abstract: MAZF039 MAZF062 MAZF047 mazf068 MAZF100 MAZF120 MAZF033 MAZF043 MAZF051
Contextual Info: MA111 Zener Diodes MAZF000 Series Silicon planer type Unit : mm Surge absorption circuit 0.625 No rank classification VZ= 3.3 to 12V 0.3 0.5±0.1 ● Anode S-Mini type package (2-pin) M Di ain sc te on na tin nc ue e/ d ● Cathode 1 0.4±0.1 0.7±0.1 +0.1

MA2D760A

Contextual Info: MA111 Schottky Barrier Diodes SBD MA2D760A Silicon epitaxial planer type Unit : mm For switching power supply 4.6±0.2 9.9±0.3 2.9±0.2 VR= 100V guaranteed ● Single type ø3.2±0.1 +0 ● 13.7±0.2 4.2±0.2 IF(AV)= 5A rectification possible ue pl d in

ma5z270

Abstract: P469 ma5z220 MA5Z330-M marking az
Contextual Info: MA111 Zener Diodes MA5Z000 Series Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit Anode 0.625 High voltage withstand zener diode 0.3 ● 1 2 0.4±0.1 0.7±0.1 +0.1 0.16 –0.06 S-mini type package

P487

Abstract: MAZN056 MAZn039 MAZN047
Contextual Info: MA111 Zener Diodes MAZN000 Series Silicon planer type Surge absorption circuit 0.30±0.05 +0.05 0.80–0.03 • Features SS-Mini type package 2-pin 2 M Di ain sc te on na tin nc ue e/ d No rank classification (VZ= 3.3 to 12V) 1 ue pl d in an c se ed lud

2sk1259

Abstract: MA4Z082WA MA8082
Contextual Info: 2SK1259 Zener Diodes Composite Elements M A 4 Z 0 8 2 WA Silicon planer type 1 M Di ain sc te on na tin nc ue e/ d type package 3-pin wiring of MA8082 2 +0.05 0.60–0.03 +0.05 0.12–0.02 0.28±0.05 ● Anode-common 3 ue pl d in an c se ed lud pl vi an m m es

IEC1000-4-2

Abstract: MAZT062H MAZT068H MAZT082H MAZT100H MAZT120H SC-89 PANASONIC ZENER
Contextual Info: ESD Diodes MAZT000H Series Silicon planar type Unit: mm 0.28±0.05 0.80±0.05 0.44 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 • Two elements anode-common type • Ptot = 150 mW (0.80) 3 • Features 0.28±0.05 (0.51) (0.51) (0.80) (0.80)

ESS-200AX

Abstract: MAZC062D
Contextual Info: MA111 Zener Diodes Composite Elements MAZC062D Silicon planer type Constant voltage, constant current, waveform cripper and surge absorption circuit anode-common element wiring 1.45 0.95 3 +0.1 ● Two 1 0.4 –0.05 joint capacity zener diode VZ = 6.2V 1.9±0.2

Contextual Info: MA111 Zener Diodes Composite Elements MAZK068D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 +0.2 0 to 0.1 Symbol Rating Unit IF AV 100 *1

Contextual Info: Zener Diodes MAZZ000H Series Silicon planar type 0.425 Unit : mm For surge absorption circuit 0.20±0.05 4 • Features 5° • For surge absorption circuit • Four elements anode-common type • Ptot = 200 mW 0.2±0.1 1.25±0.10 2.1±0.1 5 0.12+0.05 –0.02

MAZN120

Abstract: p487 MAZN033 IFR 510 MAZN110 marking azn
Contextual Info: Panasonic Z e n e r D iodes MAZN000 Series Silicon planer type Surge absorption circuit • Features • SS-Mini type package 2-pin • No rank classification (Vz= 3.3 to 12V) Absolute Maximum Ratings (Ta= 25°C) Parameter Symbol Rating Unit mA Average forward current