2SK1259 Search Results

Contextual Info: 2SK1259 Zener Diodes Composite Elements M A 4 Z 0 8 2 WA Silicon planer type ● SS-Mini type package 3-pin 1 wiring of MA8082 3 M Di ain sc te on na tin nc ue e/ d ● Anode-common Unit : mm 1.60±0.1 0.80±0.05 +0.05 • Features 0.80 0.28±0.05 1.60–0.03

2sk1259

Abstract: MA4Z082WA MA8082
Contextual Info: 2SK1259 Zener Diodes Composite Elements M A 4 Z 0 8 2 WA Silicon planer type 1 M Di ain sc te on na tin nc ue e/ d type package 3-pin wiring of MA8082 2 +0.05 0.60–0.03 +0.05 0.12–0.02 0.28±0.05 ● Anode-common 3 ue pl d in an c se ed lud pl vi an m m es

2sk1259

Contextual Info: Power F-MOS FET 2SK1259 • b*ì32flS4 oqusst ö43 «pncs. PANAS0N IC IN ] L /E L E K S E I1 I) b^E 2SK1259 ]> Silicon N-channel Power F-MOS FET Package Dimensions ■ Features • Low ON resistance R ds (on) : R ds (on) 1 = 0.01211 (typ.) • High switching rate : tf = 700ns (typ.)

2SK125

Abstract: m2a marking
Contextual Info: 2SK1259 Switching Diodes MA122 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 4 3 +0.1 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C 1 : Cathode 1 4 : Cathode 3 2 : Cathode 2 5 : Cathode 4 3 : Anode 3, 4

M1B marking

Abstract: ma4s159
Contextual Info: 2SK1259 Switching Diodes MA4S159 Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 1.25±0.1 • Features Small S-Mini type 4-pin package Åú Independent 2.0±0.1 1.3±0.1 ● incorporating of two elements, enabling high-density mounting

2sk1259

Abstract: MA4Z082WA MA8082 SS-Mini
Contextual Info: 2SK1259 Zener Diodes Composite Elements M A 4 Z 0 8 2 WA Silicon planer type ● SS-Mini type package 3-pin 1 wiring of MA8082 3 2 +0.05 0.60–0.03 +0.05 0.12–0.02 0.28±0.05 ● Anode-common Unit : mm 1.60±0.1 0.80±0.05 +0.05 • Features 0.80 0.28±0.05

Contextual Info: 2SK1259 Power F-MOS FETs 2SK1259 Silicon N-Channel Power F-MOS Unit : mm • Features 4.0 switching : tf = 700ns typ 2.0 drive 1.5 ● Low-voltage 2.0 secondary breakdown 26.0±0.5 ● No 6.0 ● High-speed 3.0 ON-resistance RDS(on) : R DS(on)1= 0.012Ω(typ)

2SK1259

Contextual Info: Power F-MOS FET 2SK1259 2SK1259 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : R Ds (on) l = 0 .0 1 2 i! (typ.) Unit: mm 20.5max. • High switching rate : U = 700ns (typ.) 5.3max. • No secondary breakdown

Contextual Info: 2SK1259 Switching Diodes MA143, MA143A Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 0.425 1.25±0.1 0.425 2.0±0.2 1.3±0.1 0.65 0.65 Small S-Mini type package with two incorporated elements, enabling high-density mounting ● Series connection in package

M2FS

Abstract: M2F MARKING
Contextual Info: 2SK1259 Switching Diodes MA198 Silicon epitaxial planer type 2.8 –0.3 +0.25 2 recovery characteristic trr : 100ns Parameter Symbol Rating Unit VR 40 V Repetitive peak reverse voltage VRRM 40 V Single Series Repetitive peak forward current Single Non-repetitive peak

Contextual Info: Power F-MOS FET 2SK1259 2SK1259 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce R ds on : R DS (on) l = 0 .0 1 2 fl (typ.) • High sw itching ra te : tf= 700ns (typ.) • No secondary breakdow n • Low voltage drive is possible

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK996

Contextual Info: • Power F-MOS FET Package Package No. ! Type (D44) N Type (D42) 2SK1967 TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (D67) V dss V gss Id (V) (V) (A) RciS'On; V is ton tf td(o«) max. typ. (S) typ. (ns) typ. (ns) typ. (ns) 0.2 4.0 29 53 97 7.1 46

2SK2574

Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Contextual Info: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK1248

Abstract: 2SK1257 2SK124 2SK1250 2SK1241 2SK1249 2sk1259 2SK1243 2SK1244 2SK1245
Contextual Info: - 92 - f m. % *± « ffl m E mmi A £ V* h ft* E ft K V * (V) fé I* !xl X ft (A) P d /P c h (W) I g SS (max) (A) Vg s (V) (min) (A) «I (max) V d s (A) (V) 'te & (Ta=25tî) (min) (max) V d s (V) (V) (V) gm (min) (tys) V d s (S) (V) (S) Id (A) 2SK1241

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

2sk2015

Abstract: 2SK2277 2SK2377 2SK1635 2SK2014 2SK2016 2SK1257 2sk1259 2SK1262 2SK2276
Contextual Info: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta = 2 5 °C) Type No. Application Pch 2SJ0398 2SK2014 2SK2015 Switching Nch 2SK2016 A2SK2211 A2SK2276 A2SK2277 A2SK2342 *1 0 = 2 5 ^

MN1873287

Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Contextual Info: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>

2SK2277

Abstract: 2SK2580 220E4 2SK2015 2SK2014
Contextual Info: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128

K614

Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Contextual Info: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)