MA6Z Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm For switching circuit 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 M Di ain sc te on na tin nc ue e/ d 1.25±0.1 2.1±0.1 • Features

MA6S718

Abstract: MA6Z718
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 0 to 0.1 5˚ Symbol Rating

MA6S718

Abstract: MA6Z718
Contextual Info: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing high-density mounting • Low forward voltage VF , optimum for low voltage rectification

MA6S121

Abstract: MA6Z121
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm For switching circuit 2.0±0.1 (0.65)(0.65) 4 1 2 3 0.7±0.1 1.25±0.1 2.1±0.1 • Features • Three isolated elements contained in one package, allowing highdensity mounting

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing

Contextual Info: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing high-density mounting • Low forward voltage VF , optimum for low voltage rectification

M2D Package

Abstract: MA6S121 MA6Z121
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm For switching circuit 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 5˚ Rating Unit Maximum peak reverse voltage

MA6S121

Abstract: MA6Z121
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm 2.0±0.1 (0.65)(0.65) 6 5 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 0.2±0.05 Reverse voltage Maximum peak reverse voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing

MA6S718

Abstract: MA6Z718
Contextual Info: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing high-density mounting • Forward voltage VF , optimum for low voltage rectification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features M Di ain sc te on na tin nc

MA6S718

Abstract: MA6Z718
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm 2.0±0.1 (0.65)(0.65) 6 5 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 0.2±0.05 0 to 0.1 Symbol Rating

MA6S718

Abstract: MA6Z718
Contextual Info: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type For switching circuits • Features 1 6 2 5 3 4 0.7 ± 0.1 0.2 ± 0.05 2.0 ± 0.1 0.65 0.65 • Small S-mini type 6-pin package • Non connected three elements incorporated in one package,

MA6S121

Abstract: MA6Z121 M2D marking
Contextual Info: Switching Diodes MA6Z121 MA6S121 Silicon epitaxial planar type Unit : mm For switching circuit 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Small S-mini type 6-pin package • Three isolated elements contained in one package, allowing highdensity mounting

MA6S121

Abstract: MA6Z121
Contextual Info: Switching Diodes MA6Z121 MA6S121 Silicon epitaxial planar type Unit : mm For switching circuit 2.1 ± 0.1 1.25 ± 0.1 • Features Symbol Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V Average forward current*1 2 5 3 4 0.7 ± 0.1

D83 ZENER

Abstract: zener d83 ma5z270 ma741 D83 004 MA776 MA6Z100WA MA6Z DIL 330 ma5z220
Contextual Info: Diodes # AM A5Z Series S Mini 2 Pin Type (D3 MA5Z200 Ir max. (M ) 1 160 MA5Z220 1 176 MA5Z240 1 192 MA52270 1 216 MA5Z300 1 MA5Z330 1 Type No. Zener Diodes V z min. typ. (V) (V) Sz typ. (m V /t) Vr max. (V) lz lz (mA) (mA) 0.31 0.1 0.1 190 200 220 0.31

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

Contextual Info: Diodes # AM A5Z Series S Mini 2 Pin Type (D3 Ir max. Vr (M ) (V) MA5Z200 1 160 MA5Z220 1 176 MA5Z240 1 192 MA52270 1 MA5Z300 MA5Z330 Type No. ★Under development Zener Diodes V z Sz typ. (m V /t) min. (V) typ. (V) max. (V) 0.1 190 200 220 0.1 210 220 240

k11 zener diode

Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Contextual Info: Diodes Switching Diodes. K2 Switching Diodes . K2