MA2ZD14 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD14 Silicon epitaxial planar type Unit: mm 1.25±0.1 For high speed switching 0.7±0.1 0.35±0.1 1 • Features 1.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD140G Silicon epitaxial planar type For high speed switching • Package ■ Features • Code SMini2-F3 • Pin Name 1: Anode 2: Cathode • Low forward voltage: VF < 0.40 V

MA2ZD14

Abstract: marking k 2pin
Contextual Info: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits A 0.625 0.3 0.5 ± 0.1 • S-mini type 2-pin package • Low forward rise voltage VF (VF < 0.4 V) 1 2 + 0.1 Symbol Rating Unit Reverse voltage (DC)

MA2ZD14

Abstract: SC-76
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD14 Silicon epitaxial planar type Unit: mm 1.25±0.1 For high speed switching 0.7±0.1 M Di ain sc te on na tin nc ue e/ d 0.35±0.1 1 • Features Rating Unit

MA2ZD14

Contextual Info: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit: mm 1.25±0.1 For high speed switching 0.7±0.1 0.35±0.1 1 • Features 1.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit VR 20 V Repetitive peak reverse-voltage VRRM 20 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD140G Silicon epitaxial planar type For high speed switching • Package ■ Features M Di ain sc te on na tin nc ue e/ d • Code SMini2-F3 • Pin Name 1: Anode

MA2ZD14

Contextual Info: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits A 0.625 0.3 0.5 ± 0.1 • S-mini type 2-pin package • Low forward rise voltage VF (VF < 0.4 V) 1 2 + 0.1 Symbol Rating Unit Reverse voltage (DC)

MA2ZD14

Abstract: SC-76
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD14 Silicon epitaxial planar type Unit: mm 1.25±0.1 For high speed switching 0.7±0.1 0.35±0.1 1 • Features 1.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C

SC-90A

Contextual Info: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit: mm 1.25±0.1 For high speed switching 0.7±0.1 0.35±0.1 1 • Features 1.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit VR 20 V Repetitive peak reverse-voltage VRRM 20 V

marking F1 2pin

Contextual Info: MA2ZD14 Silicon epitaxial planar type For high-speed switching circuits Unit : mm 0.7±0.1 1.25±0.1 0.35±0.1 • Features 1 • S-mini type 2-pin package • Low forward rise voltage V F V F < 0.4 V 2 0.5±0.1 0.16+0.1 –0.06 5˚ Symbol Rating Unit VR

MA2ZD140G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD140G Silicon epitaxial planar type For high speed switching • Package ■ Features • Code SMini2-F3 • Pin Name 1: Anode 2: Cathode Th an W is k y Th e a pro ou

MA2ZD140G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD140G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching • Package ■ Features • Code SMini2-F3 • Pin Name 1: Anode

MA2ZD14

Abstract: SC-76
Contextual Info: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit: mm 1.25±0.1 For high speed switching 0.7±0.1 0.35±0.1 1 • Features 1.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit VR 20 V Repetitive peak reverse voltage VRRM 20 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD14 Silicon epitaxial planar type Unit: mm 1.25±0.1 For high speed switching 0.7±0.1 0.35±0.1 1 Repetitive peak reverse voltage VRRM Forward current (Average)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

S-Mini

Abstract: SSMini s-mini 2-pin package
Contextual Info: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

k11 zener diode

Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Contextual Info: Diodes Switching Diodes. K2 Switching Diodes . K2

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA716

Abstract: MA7D50 ma741 MA10799
Contextual Info: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119  MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742

Contextual Info: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3