S PARAMETERS 4GHZ Search Results

4hfan510

Abstract: 8753D ATN4000 MAX3875 MAX3950 optical amplifiers s-parameters ATN-4000 HP85033D
Contextual Info: Application Note: HFAN-5.1.0 Rev 0; 03/01 Single-Ended and Differential S-Parameters MAXIM High-Frequency/Fiber Communications Group Maxim Integrated Products 4hfan510.doc 03/14/01 Single-Ended and Differential S-Parameters 1 Overview Differential circuits have been important in

47146

Abstract: 09 03 296 6421 marking code s22 CFH800 58202 06069 04514
Contextual Info: CFH800 P - HEMT Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications

6943-3

Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications

transistor Zo 105

Abstract: 6943-3 55086 HEMT marking P 05973
Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz

transistor zo 107

Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz

transistor zo 107

Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz

2N6617

Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101
Contextual Info: COMPONENTS Features 2JÏ8 ¡0.078 1.57l0.062"f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions

5252 F 1104

Abstract: 5252 F 1007 5252 F 1005 800T HEMT marking P
Contextual Info: CFH800T P - HEMT Target Datasheet Features • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications

Hewlett-Packard application note 967

Abstract: HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor
Contextual Info: COMPONENTS Features 2 JÏ8 ¡0.078 1.5 7 l0 .0 6 2 " f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions

M 6965

Abstract: HEMT marking D CFH400T 72482 HEMT marking P 74923 HEMT marking K
Contextual Info: CFH400T P - HEMT Target Datasheet Features Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz F = 0.6 dB; Ga = 15.5 dB @ 3V; 10mA;

Contextual Info: Precision Edge SY10EP32V SY100EP32V FINAL 5V/3.3V ÷ 2 DIVIDER FEATURES • Guaranteed maximum frequency > 4GHz ■ 3.3V and 5V power supply options ■ Guaranteed propagation delay <440ps over temperature ■ Internal 75KΩ input pull-down resistors ■ Wide operating temperature range: –40°C to +85°C

Contextual Info: Precision Edge SY10EP32V SY100EP32V FINAL 5V/3.3V ÷ 2 DIVIDER FEATURES • Guaranteed maximum frequency > 4GHz ■ 3.3V and 5V power supply options ■ Guaranteed propagation delay <440ps over temperature ■ Internal 75KΩ input pull-down resistors ■ Wide operating temperature range: –40°C to +85°C

Contextual Info: Precision Edge SY10EP32V SY100EP32V FINAL 5V/3.3V ÷ 2 DIVIDER FEATURES • Guaranteed maximum frequency > 4GHz ■ 3.3V and 5V power supply options ■ Guaranteed propagation delay <440ps over temperature ■ Internal 75KΩ input pull-down resistors ■ Wide operating temperature range: –40°C to +85°C

hp32

Contextual Info: Precision Edge Micrel Precision Edge™ SY10EP32V SY100EP32V SY10EP32V SY100EP32V FINAL 5V/3.3V ÷ 2 DIVIDER FEATURES • Guaranteed maximum frequency > 4GHz ■ 3.3V and 5V power supply options ■ Guaranteed propagation delay <440ps over temperature ■ Internal 75KΩ input pull-down resistors

SY100EP32V

Abstract: SY100EP32VZC SY100EP32VZCTR SY10EP32V SY10EP32VKC SY10EP32VZC SY10EP32VZCTR
Contextual Info: Micrel, Inc. 5V/3.3V ÷ 2 DIVIDER Precision Edge SY10EP32V PrecisionSY100EP32V Edge® SY10EP32V SY100EP32V FEATURES • Guaranteed maximum frequency > 4GHz ■ 3.3V and 5V power supply options ■ Guaranteed propagation delay <440ps over temperature ■ Internal 75KΩ input pull-down resistors

Contextual Info: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=13dB at 2GHz  48V Typical Packaged Performance

Contextual Info: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   RF IN VG Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged

LT5560

Abstract: GSM repeater circuit
Contextual Info: LTC News for Immediate Release For more information, tel. 408-432-1900 Doug Dickinson, Media Relations Mgr., ext. 2233 John Hamburger, Dir., Mkting Comm., ext. 2419 www.linear.com Low Power Active Mixer Offers Wide Bandwidth to 4GHz MILPITAS, CA – May 8, 2006 – A new high performance mixer from Linear Technology

fujitsu hemt

Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt
Contextual Info: FHC40LG - Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability

sirenza LNA

Contextual Info: Advanced SGL-0622Z Pb RoHS Compliant & Green Package Product Description The SGL-0622 is a low power, high gain, fully matched LNA designed for 0.05 - 4GHz operation. This LNA is designed for low power, 2.7 to 3.6V battery operation. This amplifer is fully matched and requires only 4-5

HXTR-5002

Abstract: HXTR-5102 HXTR-5104 SM 97 S21E HXTR5104 HXTR 5104 s parameters 4ghz
Contextual Info: NEW LINEAR POWER TRANSISTOR CHIP COMPONENTS Features - - HXTR-5002 CIRCUITS H E W L E T T ^ PACKARD 380 0.015 TYPICAL INTEGRATED HIGH P1dB LINEAR POWER 29 dBm Typical at 2GHz 27.5 dBm Typical at 4GHz HIGH ASSOCIATED GAIN 12.5 dB Typical at 2GHz 7.5 dB Typical at 4GHz

2SC2644

Contextual Info: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. 5 .1 M A X . , • • • High Gain Low IMD fp = 4GHz Typ. 0 .5 5 M A X . 0.45 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

s parameters 4ghz

Abstract: GSH904-89 MAG-S22 s 0934
Contextual Info: GSH904-89 Discrete HFET Product Features ● 0. 1 to 4GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3.5 dB Noise Figure Product Description 4 The GSH904-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 4GHz frequency range with 22 dB

Contextual Info: Preliminary SGL-0622Z Pb RoHS Compliant & Green Package Product Description The SGL-0622 is a low power, high gain, fully matched LNA designed for 0.1 - 4GHz operation. This LNA is designed for low power, 2.7 to 3.6V battery operation. This amplifer is fully matched and requires only 4-5