CFH400 Search Results

transistor zo 107

Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz

M 6965

Abstract: HEMT marking D CFH400T 72482 HEMT marking P 74923 HEMT marking K
Contextual Info: CFH400T P - HEMT Target Datasheet Features Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz F = 0.6 dB; Ga = 15.5 dB @ 3V; 10mA;

Contextual Info: CFH400 P - HEMT Target Datasheet Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz F = 0.65dB; Ga = 17.5dB @ 3V; 15mA; f=2GHz

transistor zo 107

Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz

01248

Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

zo 607 MA

Abstract: 4948 CFH400 pHEMT FET marking A
Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

FMCW Radar

Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
Contextual Info: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.

sot43

Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

ZO 607 MA

Abstract: 4948 ta 6203 CFH400 Q62702-G0116
Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and