47146
Abstract: 41146
Contextual Info: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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Abstract: 09 03 296 6421 marking code s22 CFH800 58202 06069 04514
Contextual Info: CFH800 P - HEMT Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications
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Abstract: 7698 8627 CFH800
Contextual Info: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Product Description Features The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to 4 GHz such as PCS CDMA and UMTS receivers, base stations LNAs, and WLAN
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Abstract: CFH800 800um gps lna
Contextual Info: Demonstration Board Documentation / Applications Note V1.1 CFH800 Low-Noise, High-Linearity Packaged pHEMT FET Features • Low Noise figure and high associated gain for high IP3 receiver stages up to 4 GHz • NF = 0.50dB; Ga = 17 dB @ 3V, 30 mA F = 1.8 GHz
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Contextual Info: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Features • • Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to
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Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications
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transistor Zo 105
Abstract: 6943-3 55086 HEMT marking P 05973
Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz
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Contextual Info: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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Abstract: SOT43 402 5921
Contextual Info: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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Abstract: 30186 102260 05624 05444
Contextual Info: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Features • Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to
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Contextual Info: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Features • Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to
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Abstract: k 3918 CFH800
Contextual Info: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Features • Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to
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5252 F 1104
Abstract: 5252 F 1007 5252 F 1005 800T HEMT marking P
Contextual Info: CFH800T P - HEMT Target Datasheet Features • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications
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Contextual Info: Infineon * e c h n * !ú £ |iú i P-HEMT CFH800T Preliminary Data Sheet • Low noise figure and high associated gain for high 1P3 receiver stages up to 4 GHz • Suitable for PCS CDMA and UMTS applications F - 0.52 dB; GA = 14.5 dB @ 3 V; 20 mA; / = 1.8 GHz
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433MHZ amplifier 1w
Abstract: 433 mhz rf amplifier module 5w Smart RF04EB uhf linear amplifier module 5w ic sma 4038 ND 433 A TA31275EVKIT-433 smartrf04eb UGWW2USHN33A dkrn
Contextual Info: RF Wireless Evaluation Kit The Evaluation kits allow for a detailed evaluation of the Transceivers and Receiver. They enable testing of the device’s RF performance and require no additional support circuitry. The RF input uses a 50Ω matching network and an SMA connector for convenient connection to test
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N-Channel, Dual-Gate FET
Abstract: CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET
Contextual Info: Ga As Components Infineon ? a c Kn o ! o 9 i a s Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules. 5 Dual-Gate GaAs F E T s.
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TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint
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Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Contextual Info: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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FMCW Radar
Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
Contextual Info: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.
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TGA2517
Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Contextual Info: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4
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