2SC650
Abstract: TRANSISTOR BC151 2SC1285 2SC369G/GR TRANSISTOR AT316 2SC37 2SC871 A642 transistor pnp AT316 TRANSISTOR 2SC870
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S -IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type num ber non-JED EC whose characteristics are not the same. i This m anufacturer-identifying symbol
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t0106te39042n914a2n2272+14300m5a2sc10010b705300ma2sc650transistor bc1512sc12852sc369g/grtransistor at3162sc372sc871a642 transistor pnpat316transistor 2sc870
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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2N3643
Abstract: 2N3844 transistor 2N3 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390
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2n27112n27122n27132n2714+92n29232n29242n29252n29262n33902n33912n36432n3844transistor 2n3
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2N3855
Abstract: 2N3856 2N3854 2N3856A 2N3855A 2N3854A n3860 2N2711 2N2712 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E Device Type b v CEO @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926
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2n27112n27122n27132n2714+132n29232n29242n29252n29262n33902n33912n38552n38562n38542n3856a2n3855a2n3854an3860
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2n3901 equivalent
Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390
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2n27112n27122n27132n2714+72n29232n29242n29252n29262n33902n33912n3901 equivalent
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2N5551 equivalent
Abstract: 2N3856 equivalent 2n5551 2n3877 2N3856A 2N3843A 2N3844A 2N3854A 2N3855 MPS-H34
Contextual Info: Econoline SPRAGUE HIGH-FREQUENCY >- PD os Ta = 25 C « _> Silicon S E P T R Transistors AMPLIFIERS/OSCILLATORS D -C C U R R E N T G A IN h FE C o nditions V (BR) V (BR) V (BR) •cBO CEO V o lts E BO V o lts mA Max. <mA) .050 4 5 2 (mW) C BO V o lts M PS-H32
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mps-h32mps-h34tp918tp3563+15tp52222n384320n51742n51752n51762n55502n5551 equivalent2n3856equivalent 2n55512n38772n3856a2n3843a2n3844a2n3854a2n3855
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BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products
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bf195 equivalentbf1972n3680bf173+6transistor bf 175bc413bfy39bf256transistor bf194ke4416
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BD373
Abstract: 2n 2222A 3904 NSDU55 National Semiconductor Discrete devices catalog ITT+Semiconductors+saj+300+t BC560 NSDU05
Contextual Info: v CE0 iMt (V e its ) M in too D e vice s KPN 2N 6730 * M « •M M M c (M H t) : .; mA 5 — PD (Amb) (m W ) 925°C 1000 80 250 50 75 100 T 0 -2 0 2 (5 5 ) 1333 1000 50 250 250 50 200 T O -237(91) 850 250 50 200 T 0 -2 0 2 (5 5 ) 2000 150 100 50 TO -39 800
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nsdu072im37002m6731pm3638+13pn3638abc239bc309bc368bc369o-236abbd3732n 2222a 3904nsdu55national semiconductor discrete devices catalogitt+semiconductors+saj+300+tbc560nsdu05
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ULN3859A
Abstract: uln3859 s 3859a ULN-3859A
Contextual Info: ULN-3859A F-M COM M UNICATIONS l-F SYSTEM ULN-3859A F-M COM M UNICATIONS l-F SYSTEM 'J ’HIS low-power, narrow-band F-M I-F system provides the second converter, second I-F, dem odulator and squelch circuitry for com munications and scanning receivers.
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uln-3859auln3859auln3859s 3859a |
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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tht404zv15azy33azt696+16zv15bzy33bzt697zt706zv27azy62atriac zd 607hep c60042sb5042sc 968 npn transistorsje 607motorola c6004diode by127 specificationsk872af118motorola semiconductor hep c3806p
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+62n3392n3201transistor bf 175germanium transistorepitaxial mesa2n241
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2N3900A
Abstract: 2N3900A equivalent 2N3404 2N2924 equivalent n3860 NTE377 2N2711 2N2712 2N2713 2N2923
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E b v CEO Device Type @ 10m A V V CE hF E M in.-M ax. @ I c , V 2N 2 7 1 1 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391
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2n27112n27122n27132n2714+122n29232n29242n29252n29262n33902n33912n3900a2n3900a equivalent2n34042n2924 equivalentn3860nte377
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2N3397
Abstract: 2N2925 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V M in.-M ax. @ I c , V c e (V) (V) Max. @ 2N2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391
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2n27112n27122n27132n2714+82n29232n29242n29252n29262n33902n33912n3397n3860
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2N2926
Abstract: 2N3859A 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type b v CEO @ 10m A V hFE V M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN NPN NPN
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2n27112n27122n27132n2714+72n29232n29242n29252n29262n33902n33912n3859a
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2n60c
Abstract: 2N3638 2N3638A 2N6002 2N5816 2N6000 HS5810 2N6006 GET3013 GET3638
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25m A 25m A GET706 GET708 to GET914 G ET3013 G ET3646 : 2N6000 2N60Q2 30 2N6001 2N6S03 t] 800m A PNP NPN pn p GET3014 GET3S3B GET3638A G ET3638 GET3638A
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50/ia800maget706get708+14get914get3013get3646ge1705cet7082n60c2n36382n3638a2n60022n58162n6000hs58102n6006get3638
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transistor pnp-npn
Abstract: 2N6006 2N6000 2N6002 GET3013 GET3014 GET3638 GET3646 GET706 GET708
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 G ET3013 G ET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75m A 75m A t] 800m A PNP NPN pn p GET3014 GET3S3B GET3638A G ET3638
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Contextual Info: LTC3859A Low IQ, Triple Output, Buck/Buck/Boost Synchronous Controller with Improved Burst Mode Operation DESCRIPTION FEATURES n n n n n n n n n n n n n n n Dual Buck Plus Single Boost Synchronous Controllers Outputs Remain in Regulation Through Cold Crank
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ltc3859a75khz850khz50khz+4900khz140khz650khzltc3891
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G02920
Abstract: cmdh-4e
Contextual Info: LTC3859AL Triple Output, Buck/Buck/Boost Synchronous Controller with 28µA Burst Mode IQ Description Features Low Operating IQ: 28 A One Channel On n Dual Buck Plus Single Boost Synchronous Controllers n Outputs Remain in Regulation Through Cold Crank Down to 2.5V
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75khz850khz50khz900khz+338-leadg02920cmdh-4e
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LTC3859AFE
Abstract: s 3859a LTC3859 LTC3859A LTC3859AE LTC3859AEFE LTC3859AH LTC3859AHFE LTC3859AI LTC3859AIFE
Contextual Info: LTC3859A Low IQ, Triple Output, Buck/Buck/Boost Synchronous Controller with Improved Burst Mode Operation Description Features Dual Buck Plus Single Boost Synchronous Controllers n Outputs Remain in Regulation Through Cold Crank Down to 2.5V n Low Operating I : 55 A One Channel On
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ltc3859a75khz850khz50khz+13900khz140khz650khzltc3891ltc3859afes 3859altc3859ltc3859aeltc3859aefeltc3859ahltc3859ahfeltc3859ailtc3859aife
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