RURG80 Search Results

Contextual Info: RURG8070, RURG8080, RURG8090, RURG80100 80A, 700V - 1000V Ultrafast Diodes Aprii 1995 Features Package • U Itrafast with Soft JEDEC STYLE 2 LEAD TO-247 • Operating Temperature. . . +175 C • Reverse Voltage Up To . . .

RURG8040

Contextual Info: HA RR IS S E M I C O N D S E C T O R ih a rris W bflE D • 43 D2 27 1 D D S Q BT S 33S M H A S HUHG8040, RURG8050 RURG8060 SEMICONDUCTOR 80A, 400V - 600V Ultrafast Diodes December 1993 Features • Ultrafast with Soft Recovery. <75ns

RURG80100

Contextual Info: RURG80100 Data Sheet January 2000 File Number 3371.3 80A, 1000V Ultrafast Diode Features The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

Contextual Info: RURG80100 November 2013 Data Sheet 80 A, 1000 V, Ultrafast Diode Features • Ultrafast Recovery trr = 200 ns @ IF = 80 A • Max Forward Voltage, VF = 1.9 V (@ TC = 25°C) Description • 1000 V Reverse Voltage and High Reliability The RURG80100 is an ultrafast diode with low forward

Contextual Info: RURG8060_F085 80A, 600V Ultrafast Rectifier Features 80A, 600V Ultrafast Rectifier • High Speed Switching trr=74ns(Typ. @ IF=80A ) The RURG8060_F085 is an ultrafast diode with soft recovery characteristics (trr < 90ns). It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.

MUR1520 equivalent

Abstract: MUR850 BYW51150 MUR1550 MUR880 MUR1510 MUR810 RURD410 RURD610 RURD610S
Contextual Info: 75A/80A 100A 150A MUR1550 RURP3050 RURG3050 RURG5050 RURG8050 RURU5050 RURU8050 RURU10050 RURU15050 MUR850 RURP1550 RURP850 60ns 1.5V 60ns 1.5V 60ns 1.6V 75ns 1.6V 85ns 1.6V 75ns 1.6V 85ns 1.6V 100ns 1.6V 100ns 60ns 1.5V 60ns† 1.5V MUR8100E RURP15100 RURP30100 RURG30100 RURG50100 RURG80100 RURU50100 RURU80100 RURU100100 RURU150100

RURG80100

Abstract: RURG8070 RURG8080 RURG8090
Contextual Info: S E M I C O N D U C T O R RURG8070, RURG8080, RURG8090, RURG80100 80A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<125ns JEDEC STYLE 2 LEAD TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

RURG8040

Abstract: RURG8060 RURG8050
Contextual Info: RURG8040, RURG8050, RURG8060 S E M I C O N D U C T O R 80A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<75ns JEDEC STYLE 2 LEAD TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

Contextual Info: RURG80100 Data Sheet January 2002 80A, 1000V Ultrafast Diode Features The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURG8060

Contextual Info: RURG8060 November 2013 Data Sheet 80 A, 600 V, Ultrafast Diode Features • Ultrafast Recovery trr = 85 ns @ IF = 80 A • Max Forward Voltage, VF = 1.6 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability Description • Avalanche Energy Rated

RURG8060

Abstract: TO247 package dissipation
Contextual Info: RURG8060 Data Sheet January 2002 80A, 600V Ultrafast Diode Features The RURG8060 is an ultrafast diode with soft recovery characteristics trr < 75ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURG8060

Contextual Info: RURG8060 Data Sheet January 2000 File Number 3388.3 80A, 600V Ultrafast Diode Features Title UR 060 The RURG8060 is an ultrafast diode with soft recovery characteristics trr < 75ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RURG8050

Contextual Info: i lA n n i* ^ S E M I C O N D U C T O R RURG8040, RURG8050 RURG8060 80A, 400V - 600V Ultrafast Diodes December 1993 Package Features JE D E C STYLE 2 LEAD TO-247 TOP VIEW • Ultrafast with Soft

RURG8060

Abstract: TA09886
Contextual Info: RURG8060 Data Sheet January 2000 File Number 3388.3 80A, 600V Ultrafast Diode Features The RURG8060 is an ultrafast diode with soft recovery characteristics trr < 75ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RURG80100

Contextual Info: RURG80100 Data Sheet January 2002 80A, 1000V Ultrafast Diode Features The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURG6080

Contextual Info: RURG8070, RURG8080, RURG8090, RURG80100 HARRIS S E M I C O N D U C T O R 80A, 700V - 1000V Ultrafast Diodes April 1995 Package Features JEDEC STYLE 2 LEAD TO-247 • Ultrafast with Soft R • Operating Tem p eratu re. +175°C

Contextual Info: RURG8060 March 2001 Data Sheet 80 A, 600 V, Ultrafast Diode Features • Ultrafast Recovery trr = 85 ns @ IF = 80 A • Max Forward Voltage, VF = 1.6 V (@ TC = 25°C) The RURG8060 is an Ultrafast Diode with low forward voltage drop. This device is intended for use as

Contextual Info: RURG8060_F085 80A, 600V Ultrafast Rectifier Features 80A, 600V Ultrafast Rectifier • High Speed Switching trr=74ns(Typ. @ IF=80A ) The RURG8060_F085 is an ultrafast diode with soft recovery characteristics (trr < 90ns). It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.

RURG80100

Contextual Info: RURG80100 Data Sheet January 2000 File Number 3371.3 80A, 1000V Ultrafast Diode Features Title UR 010 The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RA 8040

Abstract: st 8050
Contextual Info: an H a rris I M J R U R G 8040, R U R G 8050, RURG8060 S E M I C O N D U C T O R Aprii ,9 9 5 80A, 400V - 600V Ultrafast Diodes Package Features • Ultrafast with Soft Recovery . .<75ns • Operating Tem p eratu re. . . . ,+175°C • Reverse Voltage Up To . . . .

Contextual Info: RURG80100 March 2001 Data Sheet 80 A, 1000 V, Ultrafast Diode Features • Ultrafast Recovery trr = 200 ns @ IF = 80 A • Max Forward Voltage, VF = 1.9 V (@ TC = 25°C) The RURG80100 is an Ultrafast Diode with low forward voltage drop. This device is intended for use as

MOS Controlled Thyristor

Abstract: MCTA75P60E1 MCTV75P60E1
Contextual Info: MCTV75P60E1, MCTA75P60E1 S E M I C O N D U C T O R 75A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC • 2000A Surge Current Capability

RURU10060

Abstract: MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010
Contextual Info: 150A RURP8120 RURP15120 RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 RURU100120 RURU150120 2.1V 110ns 2.1V 130ns 2.1V 150ns 2.1V 150ns 2.1 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 1200V S E M I C O N D U C TO R NOTE: VF at IF AVG , TJ = 25oC; trr at IF(AVG), dIF/dt = 100A/µs or 200A/µs, TJ = 25oC; † trr at IF = 1A.

igbt 1000v 80a

Abstract: 30A, 600v DIODE
Contextual Info: — MCT/IGBT/DIODES — 5 ULTRAFAST SINGLE DIODES PAGE SELECTION G U ID E . 5-3 MUR810, MUR815,