RU4M Search Results

RU4AM

Contextual Info: RU4M-RU4AM High Efficiency Rectifiers VOLTAGE RANGE: 400 - 600 V CURRENT: 3.5 A DO - 27 Features Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, alcohol, ls opropand and s im ilar s olvents

RU4AM

Abstract: RU4Z
Contextual Info: SIYU R RU4Z / RU4M / RU4AM 塑封快恢复整流二极管 Plastic Fast Recover Rectifier 反向电压 200 - 600V 正向电流 3.5 A Reverse Voltage 200 to 600V Forward Current 3.5A 特征 Features DO-27 •反向漏电流低 Low reverse leakage 1.0 25.4

ru4jg

Abstract: ru4dg
Contextual Info: RU4AG THRU RU4MG GLASS PASSIVATED FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT:2.0A FEATURE DO-201AD High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500

RU4J

Abstract: RU4D GF600 RU4A
Contextual Info: RU4AGF THRU RU4MGF SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT:2.0A FEATURE DO-201AD High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of

Contextual Info: RU4M - RU4AM FAST RECOVERY RECTIFIERS PRV : 400 - 600 Volts Io : 2.0 Amperes DO-201AD FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

RS4FS

Abstract: R02Z RU4AM R02A RU1P RU4DS R02B R02C RM10B RM10Z
Contextual Info: - 70 - ü m RMIO RMIOA RM10B RM10 Z RM11A RM11B RM11C R02 R02A R02B R02C R02Z RS1A RS1B RS3FS RS4FS RU1P RU2 RU2AM RU2B RU2C RU2M RU2YX RU2Z RU3 RU3A RU3AM RU3B RU3C RU3M RU3YX RU4 RÜ4A RU4AM RCJ4B RÜ4C RU4D RU4DS RU4M RU4Y RU4YX RU4Z RU30 RU30A S1X20 £

RU4AM

Abstract: RU4M
Contextual Info: RU4M - RU4AM FAST RECOVERY RECTIFIERS PRV : 400 - 600 Volts Io : 2.0 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

RU4AM

Abstract: RU4A NS508
Contextual Info: BL GALAXY ELECTRICAL RU4M Z - RU4AM(Z) VOLTAGE RANGE: 400 - 600 V CURRENT: 3.5 A HIGH EFFICIENCY RECT IFIER FEATURES DO - 27 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, alcohol, ls opropand and

DO-201AD

Contextual Info: RU4AGF THRU RU4MGF SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT:2.0A DO-201AD FEATURE High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of

Contextual Info: SIYU R RU4Z / RU4M / RU4AM 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 200 to 600V Forward Current 3.5A 反向电压 200 - 600V 正向电流 3.5 A 特征 Features DO-27 •低的反向漏电流 Low reverse leakage 1.0 25.4

Contextual Info: SIYU R RU4Z / RU4M / RU4AM 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 200 to 600V Forward Current 3.5A 反向电压 200 - 600V 正向电流 3.5 A 特征 Features DO-27 ・低的反向漏电流 Low reverse leakage 1.0 25.4

Contextual Info: SANKEN ELECTRIC CO., LTD. RU4M 1. Scope The present specifications shall apply to a RU4M. 2. Outline Type Silicon Diode Structure Resin Molded Applications Flammability:UL94-V0 Equivalent High Frequency Rectification, etc. 3. Absolute maximum ratings No.

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

transistor f422

Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­

bv0T

Abstract: 658X
Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­

D65806

Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications

RU4A

Abstract: RS4FS R02B R02Z RU1P RU4AM R02A ru4z R02C RM10B
Contextual Info: - 70 * ü m £ tt « Vr s m Vr r m V (V) m is & Vr 1 FM Tm * (V ) (A) (°C) I FS M Io .If* (A) (°C) (A) isi rc) (V) $ & Æ [S] ft î é I R in a x V Fmax I F (A) T(°C) * (tfA) V r (V) t£ m m TOC) RMI O RM IO A RM 10 B RM 10 Z RM 1 1 A •V y^r y •ï y>r y

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

shindengen mr5060

Abstract: TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M
Contextual Info: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A

transistor f422

Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
Contextual Info: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high

SSC9512

Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Contextual Info: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China

diode ru4d

Abstract: ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1
Contextual Info: C M O S -8 L 3 -V O L T , 0 .5 0 -M IC R O N C M O S G A TE A R R A YS NEC Electronics Inc. P r e lim in a r y Description February 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS- 8 L family consists of ultra-high per­ fo rm a n c e , s u b -m ic ro n g a te a rra y s , ta rg e te d fo r

RS4FS

Abstract: R02Z R02c R02A RS3F RU3M RU4AM RU4C R02B RM10B
Contextual Info: - 70 * ü m £ tt « Vr s m Vr r m V (V) m is & Vr 1 FM Tm * ( V) (A) (°C) I F SM Io .If* (A) (°C) ( A) isi rc) (V) $ & Æ [S] ft î é I R in a x V Fmax I F (A) T(°C) * (tfA) Vr (V) t£ m m TOC) RMIO R MI OA R M10 B RM 10 Z RM 1 1 A •V y^r y •ï y>r y

bv0T

Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Contextual Info: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high