RU 2AM Search Results

RU series diodes

Abstract: diode ru ru 4 j RU-2M(V)TA RU2B
Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. RU 1 RU 1A RU 1B RU 1C RU 2Z RU 2 RU 2B RU 2C RU 2M RU 2AM IFSM (A) Tj (°C) Tstg (°C) 50Hz Half-cycle Sinewave Single Shot

Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter VRM （V） Type No. RU 1 RU 1A RU 1B RU 1C RU 2Z RU 2 RU 2B RU 2C RU 2M RU 2AM I F（ AV） （A） IFSM （A） Tstg Tj （℃） （℃） VF （V）

FMS-3FU

Abstract: FMP-G3FS FMPG3F FMS3FU CTU-12S FMS-3FU 45 16 CTU12S RP1H RS4FS RU4AM
Contextual Info: SANKEN ELECTRIC CO LTD 3SE D E HIGH SPEED RECTIFIER DIODES M a xim u m ra tin g s P a rts No. V rm V . E U 02Z 400 02A 600 EU 2 Z 200 2 400 2A 600 E U 2Y X 100 RU2M 400 600 RU2YX 100 RU 3 400 3A RU 3 M 3AM 600 400 600 RU3YX 100 RU 3 0 ' 400 RU30A 600 RU4Y

FMS-3FU

Abstract: FMP-G3FS FMS3FU FMPG3F RS3F
Contextual Info: SANKEN ELECTRIC CO LTD 3SE E HIGH SPEED RECTIFIER DIODES Maximum ratings Parts No. V rm V . EU02Z 200 02 400 02A 600 EU 2Z 400 2A EU 2YX 600 R U 2M 400 100 600 R U 2Y X 100 RU 3 400 3A RU 3M 600 400 3AM 600 R U 3Y X RU 3 0 ' 400 R U 30A 600 R U 4Y 100 100

ru 52 8 pin

Abstract: diodes ru 4c fmqg5g
Contextual Info: Fast Recovery Rectifier Diodes 4-2 4-2-1 Part No. 1 Chip VRM IF IFSM trrq trrw V (A) (A) (µS) (µS) Package Fig. No. Part No. EU 2YX 1.2 25 0.2 0.08 Axial(E1) 3 RS 1A RU 2YX 1.5 30 0.2 0.08 Axial(R1) 4 AU02A RU 3YX 2.0 50 0.2 0.08 Axial(R2) 5 EU02A 70 0.4

Contextual Info: SANKEN ELECTRIC CO LTD 3SE D Fast Recovery Diodes Eä ? CJC10741 OODQÖD7 4 ^ SAKJ fT03*Ö EVRM:100~2000V Eio:0.l~4.0A RU/RP/RS/RH V rm (V Ifsm Tj (A) CC) Tstg CC) 450 400 650 600 100 100 450 400 650 600 450 400 650 600 100 100 400 400 600 600 1.1 1.5 Vf

diodes ru 4c

Abstract: gh3f CTB34
Contextual Info: SANKEN ELECTRIC U S A 11E J> | 711Ü741 0 0 M C S 5 High Speed Rectifier Diodes «Vrm : 7 0 -2 0 0 0 V 3 | Bio :0.1-4.0 A Z B EB m BÊB Bm u m m K M X -o ^\ 3 RU/GH/GU/RPs.«. Type No. V rm V (V) Io If s m (A) (A) Tj <"C) Tstg Vf (V) CC) IWthFin SOHz H a lf S in e

FMS-3FU

Abstract: FMPG5F FMP-G3FS FMPG5FS RH1Z RU4C FMPG3F ru4d EU-01A FMS3FU
Contextual Info: V rm lo V (A) RC2 EH1Z 2000 200 0.2 EH 1 400 600 0.6 EH1A RH1Z RH 1 RH1A RH1B RH 1C AS01Z AS01 AS01A 600 800 1000 0.6 400 2.0 0.2 10 4 .0 EU 2Z 1.35 0.6 35 1.3 0.6 1.5 0.6 0.7 30 2.5 0.8 20 2.0 0.5 0.5 ES 1 ES1A ES1F RS1A 400 600 1500 600 0.7 RS1B AU01Z

FMPG5F

Abstract: FMS-3FU fmpg3f FMP-G3FS FMUG16S FMS3FU
Contextual Info: FAST-RECOVERY RECTIFIER DIO DES Absolute M axim um Ratings Type No. V rm lo V (A) RC 2 2000 EH1Z 200 EH 1 400 0.2 0.6 20 30 V rm lo I fsm (V) (A) (A) Elee. Char, at 25“ C vF *FSM (A) Elee. Char, a t 0c Absolgte Maximum Ratings Type No. Ir EU02Z 200 Max. @ lF

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

diode ru

Abstract: diode RU 3AM AS01A AU01A AU02A ES01A EU01A EU02A FMU-16S FMU-26S
Contextual Info: Part Number 50Hz is with Half-cycle Sinewave Heatsink Single Shot VR = VRM VR = VRM Ta max max (°C) t rr 1 (µs) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) IF / I FP (mA) –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

RU2B

Contextual Info: SIYU R RU2Z . RU2C Fast Recovery Rectifier Reverse Voltage 200 to 1000 V Forward Current 1.0 A DO-41 Features 1.0 25.4 MIN .034(0.9) DIA .028(0.7) . Low reverse leakage . High forward surge capability . High temperature soldering guaranteed: .205(5.2)

diode RU 3B

Abstract: RU3AM 3amru diode RU 3AM RU3C 3am ru RU2B Dachang
Contextual Info: SIYU R RU3 . RU3C Fast Recovery Rectifier Reverse Voltage 400 to 1000 V Forward Current 1.1A to 1.5A DO-15 Features 1.0 25.4 MIN .034(0.9) DIA .028(0.7) . Low reverse leakage . High forward surge capability . High temperature soldering guaranteed: .300(7.6)

HVR-1X 7 diode

Abstract: FMS-3FU HVR-1X 6 diode MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR FMPG5F rk36 diode rk14 diode HVR-1X 7 diode RU 3AM HVR-1X diode
Contextual Info: DIODES RECTIFIER DIODES Absolute Maximum Ratings Type No. VRM IO IFSM V (A) (A) Elec. Char. at 25°C VF 200 SFPM-54 400 SFPM-62 200 SFPM-64 Abs. Max. Ratings Type No. Max. @ IF(µA) (V) SFPM-52 IR 0.9 30 1.0 1.0 45 0.98 (A) VRM IO IFSM (V) (A) (A) Max. 10

Contextual Info: SIYU R RU2Z.RU2C 塑封快恢复整流二极管 Plastic fast Recover Rectifier Reverse Voltage 200 to 1000V Forward Current 0.8 to1.1A 反向电压 200 -1000V 正向电流 0.8 -1.1 A 特征 Features DO-15 ・低的反向漏电流 Low reverse leakage

RU 2C

Abstract: F RU 250 RU2B RU 2AM ru2am
Contextual Info: SIYU R RU2Z.RU2C Plastic fast Recover Rectifier 塑封快恢复整流二极管 Reverse Voltage 200 to 1000V Forward Current 0.8 to1.1A 反向电压 200 -1000V 正向电流 0.8 -1.1 A 特征 Features DO-15 •低的反向漏电流 Low reverse leakage

10zrl

Contextual Info: General-purpose Diodes Rectifier Diodes • Surface-mount Type Absolute Maximum Ratings Part No. VRM V 1.0 1.0 10 –40 to +150 0.98 1.0 10 30 –40 to +150 1.0 1.0 10 45 –40 to +150 0.98 1.0 10 I FSM (A) 0.9 30 –40 to +150 SFPM-62 1.0 45 SFPM-54 0.9

SE135N

Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668

Contextual Info: I F AV (A) Part Number 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot VR = VRM VR = VRM Ta max max (°C) t rr 1 (µs) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) IF / I FP (mA) 15 –40 to +150 2.5 0.25 10 150 100 0.4

AS01A

Abstract: AU01A AU02A ES01A EU01A EU02A FMU-16S FMU-26S FMUP-1056 FMUP-1106
Contextual Info: Part Number 50Hz is with Half-cycle Sinewave Heatsink Single Shot VR = VRM VR = VRM Ta max max (°C) t rr 1 (µs) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) IF / I FP (mA) –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20

Contextual Info: 4-2 Fast Recovery Diodes VRM V 600 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA)

RY3A

Abstract: ry2a FMY-1106S FMY-2206S 3fs 4a AS01A AU01A AU02A ES01A EU02A
Contextual Info: 4-2 Fast Recovery Diodes VRM V 600 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM Tj (A) (°C) 50Hz Single Half Sine Wave Tstg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA)

SE110N

Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Contextual Info: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)