RT60 Search Results

LR21455

Contextual Info: Product Data Sheet RT60AXB Replace “X” with 2 or 3 for number of poles Reinforced Class T Fuse Holder 60 Amps, 300 Volts AC Wire Range: #2 - #14 AWG CU #2 - #12 AWG AL Holds fuse size 9/16” diameter X 7/8” Commonly used fuses in this holder: A3T, JJN, JLLN

RT6010

Abstract: 10uF 450v tv CAPACITOR sp-D132 RT6010GS
Contextual Info: RT6010 Dual Channel High Efficiency and High Accuracy Average Current Control LED Backlight Buck Controller General Description Features The RT6010 is a dual channel high accuracy average current control LED backlight buck controller for 2 LED strings w/

RT6030

Abstract: ICC12
Contextual Info: RT6030 4-CH LED Current Source Controller General Description Features The RT6030 is a current source controller, capable of driving up to 4-CH of LEDs . The part can also be used to drive an external BJT or N-MOSFET for various applications. With a wide operating voltage range from 3.8V to 13.5V,

RT6032

Abstract: RT8525
Contextual Info: RT6032 4-CH Constant Current LED Driver for Display Backlight General Description The RT6032 is a 4-CH constant current sink LED drivers with Dynamic Headroom Control DHC function. RT6032 can provide well current matching ability, adjustable VSET to choose the suitable dropout voltage across the MOS /

McMaster-Carr

Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

rt6010

Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
Contextual Info: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

RT139

Abstract: RT137 STRATOS LIGHTWAVE 437-001 RT63 RT113 SFP EVAL BOARD RT179 RT353 rt162 rt176
Contextual Info: Preliminary CYP15G0402DX Evaluation Board User’s Guide Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 March 1, 2002 CYP15G0402DX Evaluation Board User’s Guide Table of Contents 1. Overview . 4

RT60A3B

Abstract: 6T100A3B R6T60A3B 6T100A transistor A6t 15 LR21455 T30AXB BY261 6T30A3S AL2250
Contextual Info: Class T Fuse Holders - 300/600 Volt+ Fuse Holders Specifications: • • • • • + Tested and Approved for 200,000 Amp Withstand Rating and Short Circuit Withstand Rating UL Listed File No. IZLT.E35113 CSA Certified File No. LR21455 RoHS Compliant Refer to www.marathonsp.com/PDFs/1000VCERating.pdf for details on

transistor GaN

Contextual Info: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 Flanged • GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching

rb40 bridge

Abstract: TPT50 RB152 RT113 rt842 RTL8101L cb311 bridge rb60 Socket AM2 micro-star
Contextual Info: 5 4 3 2 1 SYS POWER MS1022 BLOCK DIAGRAM Rev. 0A Dothan SOCKET 479 478 uFCPGA PAGE 3,4,5 D CHARGER VRAM DC JACK & SELECTOR +1.1/1.25V VGA Power +1.2V PCI-E Power HOST BUS PAGE 44 , 45 , 46 PAGE 33 FSB 400 / 533 MHz PAGE 34 +1.5V +1.8VDDRM SMDDR_VTERM OZ816

000w212

Abstract: 202K1 RK-6713 RT-301
Contextual Info: TE Specification Control Drawing TE Connectivity 202K1' a Part as supplied. ._ - H DI A b) J DI A Part after u n r e s t r i c t e d recovery. 4.5 P {0'JS, Di o P o t t i n g Port Ì0 . 12) Dia P o 1 1 ing Por t 2. 0 Di a Ho Le DIMENSIONS i n in I I L i m e t r e s

t10812

Abstract: Jensen B 17038 70-12911-04 Jensen* B 17038 B1182 70-12911-2 an 17830 A 009-036-9-001 sangamo capacitor rotary potentiometer dual 60k
Contextual Info: MALLORY - DURACAP INTERNATIONAL INC. P.O. Box 210, 59 Montclair Drive Woodstock, Ontario, Canada N4S 7W8 Telephone: 519 539-4891 Sales@duracap.com Fax:(519)539-6684 Cage Code 63778 E.I.A. Code 235 Web: www.duracap.com MALLORY CONTROLS - WIREWOUND AND SWITCH PRODUCTS

rt194

Abstract: rt*302 SFP EVAL BOARD rt108 RT185 cyp15g0401dxb evaluation board rt162 cyp15g0401dx Rt113 rt201
Contextual Info: CYP15G0401DXB Evaluation Board User’s Guide Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 August 12, 2003 [+] Feedback CYP15G0401DXB Evaluation Board User’s Guide Table of Contents 1. Overview . 5

000w212

Contextual Info: Specification TE a TE e y Control Drawing H D IA b) 01 202K1 Part as supplied. - - J DIA P a r t after u n r e s t r i c t e d recovery. P R S T U JO HIV JIV Mi n H Max Mi n Max ±10% ±10% +10% ±10% ±10% ±10% ±20% ±20% a b a b b b b b b b b b 2 0 2 K Ì 21-*-01

RT 2070 L

Contextual Info: Specification TE a P a rt TE Connectivity Control Drawing 2 0 2 K 1 * * —* - 0 2 as s u p p lie d . J b) P a rt afte r D TM CM C j I i L i v j i u n r e s t r ic t e d r H M C u n j re c o v e ry . i n mi L L i m e t r e s Ijn incbes, fo r re fe re n c e )

Contextual Info: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

AL8812

Abstract: C1005X7R1H104K050
Contextual Info: AL8812EV2 User Guide General Description The MR16 LED Driver Module Evaluation board shows how to use the new AL8812 with integrated MOSFET in one package as a single stage Boost LED driver for an inexpensive PFC front end for a cost effective MR16 LED Driver circuit from

N48 transistor

Contextual Info: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

chip ic m7

Abstract: MPA201 200B 25-mils
Contextual Info: MPA201 0.5 Watts, 12.5 Volts, Class A Linear to 500MHz Hybrid Amplifier GENERAL DESCRIPTION The MPA201 is a common emitter amplifier device designed for broadband performance to 500MHz in a format suitable for microstrip assembly and high reliability applications. Its wide dynamic rage and flexibility make it suitable for a

Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

000w212

Abstract: 000W2 RT1325 RT-301 202K1 RT-602 RT-1304 202K1XX
Contextual Info: Specification Control Drawing Tyco Ele ctro n ics Raychem 202K1* a P a r t as supplied. _ H DIA b) - J DIA P a r t after unrestricted recovery. 4.5 P 'jgjDia Potting Port i2)Dia Potting Port 2.0 Dia DIMENSIONS /,"n ^ ! S ^ reference) P R S T USV JO HW

Contextual Info: Spe cification Tyco Electronics 202K232 a Pant as supplied. b) Pant aften unnestnicted necoveny. DI ME N S I O N S in m i L L ¡metres in inches,for neference) H Pant No. 202K232 Raychem Control Drawing P R S T U JO HW JW X Y M in Max M in J Max ±10% ±10%

SJV50

Abstract: wpce773 G9091-330T11U-GP winbond WPCE773 G7922R61U N10M-GE1 WISTRON power sequence M08B1 DT2 UMA isl88731
Contextual Info: 5 D 4 3 2 1 SYSTEM DC/DC Project code: 91.4BU01.001 PCB P/N : 48.4BU01.0SB REVISION : 08244-SB SJV50 Block Diagram CLK GEN. ISL62392 INPUTS 41 OUTPUTS 5V_S5 6A DCBATOUT 3D3V_S5(7A) 5V_AUX_S5 3D3V_AUX_S5 GMT Mobile CPU G7922R61U Penryn ICS9LPRS365B 33 3 VRAM

FET J134

Abstract: JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor
Contextual Info: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest