RT6006 Search Results

Contextual Info: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

chip ic m7

Abstract: MPA201 200B 25-mils
Contextual Info: MPA201 0.5 Watts, 12.5 Volts, Class A Linear to 500MHz Hybrid Amplifier GENERAL DESCRIPTION The MPA201 is a common emitter amplifier device designed for broadband performance to 500MHz in a format suitable for microstrip assembly and high reliability applications. Its wide dynamic rage and flexibility make it suitable for a

FET J134

Abstract: JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor
Contextual Info: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

19S101-40ME4

Abstract: 19S101-40M ut-85 cable 32K242-40ML5 Rosenberger 19S141-40ME4 19S202-40ME4 cable UT 85 32K243 ROSENBERGER 32K243
Contextual Info: Rosenberger_ of North America, LLC Rosenberger is Exploring New Directions in Surface Mount Technology. Surface Mount Coaxial Connectors SMCC for High Frequency Applications. Released: 03 November, 2000 Prepared by: David Via Rosenberger of North America, LLC.

Transistor J182

Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

Contextual Info: MPA201 0.5 Watts, 12.5 Volts, Class A Linear to 500MHz Hybrid Amplifier GENERAL DESCRIPTION The MPA201 is a common emitter amplifier device designed for broadband performance to 500MHz in a format suitable for microstrip assembly and high reliability applications. Its wide dynamic rage and flexibility make it suitable for a

1030MHz-1090MHz

Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

1000uf, 6.3v electrolytic capacitor

Contextual Info: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz Preliminary GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

j167

Abstract: transistor j147 960-1215 transistor 500w LM1436 63v 2200uF 200B TAN500 RT6006 TRANSISTOR J214 M12200
Contextual Info: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

Contextual Info: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest