RSR025N03 Search Results

RSR025N03

Contextual Info: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 zExternal dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .

RSR025N03

Abstract: RG-107
Contextual Info: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 zExternal dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .

Contextual Info: RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) .

Contextual Info: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 !External dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 !Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .

diode

Abstract: RSR025N03 means 125 diode Z diode RSR025N03 RG107
Contextual Info: RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) .

Contextual Info: RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions Unit : mm Structure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) .

RSR025N03

Contextual Info: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 zExternal dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .

Contextual Info: RSR025N03FRA RSR025N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RSR025N03FRA RSR025N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 (2) (1) 0.95 0.95 0.16 1.9 (1) Gate (2) Source

RSR025N03

Contextual Info: SPICE PARAMETER RSR025N03 by ROHM TR Div. * RSR025N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RSR025N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

RSD130P10

Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
Contextual Info: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.

2sk3808

Abstract: 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5
Contextual Info: Transistors MOS FET 1. Can be used with automatic placement machines. Available in a wide variety of packages. Like bipolar transistors, taped MOS FETs are available for assembly lines using automatic placement equipment. 2. MOS FETs operating from 4 volts and 2.5 volts

sp8k10s

Abstract: SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX
Contextual Info: 2009 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6102FV-C General Description Key Specifications The BM6102FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 200ns, and minimum input

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

2SA2018

Abstract: EMT18 IMT18 RSR025N03 T110 UMT18N
Contextual Info: EMT18 / UMT18N / IMT18 Transistors General purpose transistors dual transistors EMT18 / UMT18N / IMT18 0.22 EMT18 (3) (4) (5) (2) 1.2 1.6 (1) 0.5 0.13 (6) 0.5 0.5 1.0 1.6 zExternal dimensions (Unit : mm) zFeatures 1) Two 2SA2018 chips in a EMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3

2SA21

Abstract: 2SA2018 2SA2030 2SA2119K RSR025N03 SC-75A T146
Contextual Info: 2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. 0.8 1.6 0.2 0.3 zFeatures 1 A collector current is large.

RQW130N03

Abstract: rqw200n03 sp8k10s mosfet rqw 130 SP8K10 RQA200N03 mosfet rqa 130 RQW130 RQA130N03 RQW 130
Contextual Info: Product Catalog MOSFETs Discrete Semiconductors 2007-Dec. www.rohm.com ROHM MOSFETs In the society these days, MOSFET is getting rapidly popular as a key-device in many applications, such as mobile phones and automotive electronics. ROHM will keep developing new devices exactly following the

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6104FV-C General Description Key Specifications     The BM6104FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 150ns, and minimum input

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6102FV-C General Description Key Specifications The BM6102FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 200ns, and minimum input