RQ10 Search Results

4165-T070

Abstract: 2261-T080 NJM2550V NJM2550 SSOP16 on-off switch ic 10,7mhz 60dBuV 10-7MHZ
Contextual Info: NJM2550 新製品 10.7MHz 入力ＦＭ 入力ＦＭ ＩＦ検波 ＩＦ検波ＩＣ 検波ＩＣ •概 要 ■外 形 NJM2550 は2V から動作する各種微弱通信機器や特定小電力 機器用 IF 検波 IC で、標準 IF 入力周波数を 10.7MHz としています。

HYB18H512322BF

Abstract: qimonda hyb18h5
Contextual Info: March 2008 IDRD51-0-A1F1C–32C XDR DRAM 512-Mbit XDR DRAM RoHS compliant Data Sheet Rev. 1.0 Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–32C Revision History: 2008-03, Rev. 1.0 Page Subjects major changes since last revision All New Data Sheet

32X4

Abstract: AT40K AT40K05 AT40K10 AT40K20 AT40K40 XC4000 XC5200
Contextual Info: Features • Ultra High Performance • • • • • • • • – System Speeds to 100 MHz – Array Multipliers > 50 MHz – 10ns Flexible SRAM – Internal 3-State Capability in each Cell FreeRAM – Flexible, Single/Dual Port, Sync/Async 10 ns SRAM

Contextual Info: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.0 December 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

smd ra6

Abstract: XDR DRAM XDR Rambus SMD fuse BA
Contextual Info: TC59YM816BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free OVERVIEW The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

intel desktop board SERVICE MANUAL

Contextual Info: LPC47U33X STANDARD MICROSYSTEMS CORPORATION 100 Pin Enhanced Super I/O Controller for LPC Bus with Consumer Features and SMBus Controller FEATURES 3.3 Volt Operation 5V Tolerant LPC Interface Floppy Disk Controller (Supports 2 FDCs) Multi-Mode Parallel Port

cd 1619 CP AUDIO

Abstract: s48c CLEVO SIS-630S c319c PS2032 MF3 IC D41 sam AA121SJ03 z326 IC601
Contextual Info: s ß u j M B j Q o j e u i e i | o 0 FREQUENCY BSEL1 R 14 3 .a m . “ GTT H srr VREF VREF VREF VREF VREF VREF VREF VREF VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT/CPUVCC

TQ14

Abstract: ad1b A E 23 AH IC LM 384 gn cn/A/U 237 BG
Contextual Info: Features • Ultra High Performance - System Speeds to 100 MHz - Array Multipliers > 50 MHz - 10ns Flexible SRAM - Internal 3-State Capability in each Cell • Free RAM'“ - Flexible, Single/Dual Port, Sync/Async 10 ns SRAM - 2,048 -18,432 Bits of Distributed SRAM Independent of Logic Cells

Contextual Info: November 2008 IDRD51-0-A1F1C–[32C/40D] XDR DRAM 512-Mbit XDR DRAM RoHS compliant Internet Data Sheet Rev. 1.12 Internet Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–[32C/40D] Revision History: 2008-11, Rev. 1.12 Page Subjects major changes since last revision

MS146818B

Abstract: 440MX 82440MX W8237 82443MX CF9H interface 8254 with 8086 443BX 82C37 82C54
Contextual Info: 82443MX PCIset

Processor Host Bus Support — Optimized for the Intel Pentium® II and mobile Celeron processors at 66 MHz — GTL+ Bus Driver Technology Integrated DRAM Support — 8 MB to 256 MB using 16-/64/128-Mb Technology — Standard and Registered

xdr rambus

Abstract: xdr elpida
Contextual Info: XDR DRAM 8x16Mx4 Advance Information Overview XDR DRAM CSP x4 Pinout The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 128M words by 4 bits. The use of Differential Rambus Signaling Level DRSL technology permits 4000/ 3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are

014701 b

Abstract: 8x4Mx16
Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

8x4Mx16

Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

rambus xdr

Contextual Info: TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free OVERVIEW The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

K1608

Abstract: asus mainboard diagram ND R433 asus Audi b5 z0123 asus notebook 401 asus schematic diagram z0121 lg r560 circuit diagram
Contextual Info:  ! " # Appendix B Circuit Diagrams * B This appendix has schematic circuit diagrams of the major parts of the notebook’s mainboard. Unless otherwise indicated, this reference has circuit diagrams for mainboard version 4.1. If the mainboard you are repairing is a different version, consult the manufacturer for the appropriate diagrams.

ATA MP 813

Abstract: Mark Y2C SOT L21011
Contextual Info: Philips S em iconductors P relim inary specification Digital video encoder DENC2 SAA7185 FEATURES • C M OS 5 V device • Digital PAL/N TS C encoder • System pixel frequency 13.5 MHz • A ccepts M PEG decoded data • 8-bit w ide M PEG port G E N E R A L D ESC R IP TIO N

XDR Rambus

Abstract: 8x4Mx16
Contextual Info: XDR DRAM 8x4Mx16/8/4/2 Overview XDR DRAM CSP x16 Pinout The Rambus XDR™ DRAM device is a general-purpose highperformance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low

PC MOTHERBOARD POWER DISTRIBUTION

Abstract: PC MOTHERBOARD troubleshooting INPUT POWER SECTION OF DESKTOP MOTHERBOARD cq128 AT40k FPGA ATDH40M DB25-10 desktop motherboard different components PC MOTHERBOARD SOFTWARE
Contextual Info: Features • Hardware – Supports Programming for Atmel AT40K Series of SRAM-based FPGA Devices – Supports ISP In-System Programming for Atmel AT17 Series Configuration EEPROMs – Built-in Clock Source with GCLK/FCLK Jumper Settings – Supports Modular Docking Platform for the ATDH40D FPGA Daughter Boards

I0358

Contextual Info: Features • Ultra High Performance - System Speeds to 100 MHz - Array Multipliers > 50 MHz - 10ns Flexible SRAM - Internal 3-State Capability in each Cell • FreeRAM - Flexible, Single/Dual Port, Sync/Async 10 ns SRAM - 2,048 -18,432 Bits of Distributed SRAM Independent of Logic Cells

7805T

Abstract: LM7805 D2 PACK IOD10 IOA10 IOA18 IOA14 5310 ci 74c14 317t IOA21
Contextual Info: Features • Hardware – Supports Programming for Atmel AT40K/AT40KAL and AT94KALSeries of SRAM-based Programmable System Level Integration PSLI Devices – Supports ISP (In-System Programming) for Atmel AT17 Series Configuration EEPROMs – Built-in Clock Source with GCLK/FCLK Jumper Settings

D17fn

Abstract: F59L fsq 51o CCIR-624 CCIR-656 PLCC68 SAA7151B SAA7188A Y043
Contextual Info: Philips Semiconductor Video Products Preliminary specification Digital video encoder DENC2-M SAA7188A FEATURES Quick Reference Data • M onolithic CM OS 5V device • D igital PAL/NTSC encoder • System Pixel Frequency: 13.5 M H z • A ccepts M PEG decoded data.

L2101

Abstract: CCIR601 CCIR-624 CCIR-656 PLCC68 SAA7111 SAA7151B SAA7184 L21017 L21010
Contextual Info: Philips Sem iconductors Prelim inary specification Digital video encoder DENC2-M6 SAA7184 FEATURES • M onolithic CMOS 5V device Quick Reference Data • Digital PAL/NTSC encoder SY M B O L • System Pixel Frequency: 13.5 MHz • Accepts MPEG decoded data.

s34 diode

Abstract: transistor SMD t17 XDR Rambus TPDN SMD fuse BA
Contextual Info: TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

Rambus XDR

Abstract: XDR Rambus EDX5116ADSE EDX5116ADSE-3C-E 8x4Mx16
Contextual Info: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation