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Amphenol Corporation


Amphenol Corporation TV07ZNCI1335SAF059LF Standard Circular Connector
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TV07ZNCI1335SAF059LF					1 $217.80 10 $190.10 100 $183.28 1000 $183.28 10000 $183.28	Get Quote
Amphenol Corporation TV07ZNCI1935SF059LF Standard Circular Connector
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TV07ZNCI1935SF059LF					1 $134.25 10 $123.21 100 $114.52 1000 $114.52 10000 $114.52	Get Quote
Amphenol Corporation TV07ZNCI1198PF059LF Standard Circular Connector
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TV07ZNCI1198PF059LF					1 $57.90 10 $50.35 100 $44.23 1000 $44.23 10000 $44.23	Get Quote
Amphenol Corporation TV07ZNCI0998PF059LF Standard Circular Connector
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TV07ZNCI0998PF059LF					1 $54.72 10 $46.69 100 $41.00 1000 $41.00 10000 $41.00	Get Quote
Amphenol Corporation TV07ZNCI1199PF059LF Standard Circular Connector
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TV07ZNCI1199PF059LF					1 $66.33 10 $58.41 100 $51.31 1000 $51.31 10000 $51.31	Get Quote

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F59L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: ESMT F59L512M81A Flash 512Mbit 64M x 8 3.3V NAND Flash Memory FEATURES          Voltage Supply: 2.7V ~ 3.6V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte	Original	F59L512M81A 512Mbit 250us	PDF
two-plane program nand Contextual Info: ESMT Preliminary Flash F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes	Original	F59L4G81A 250us 4bit/512Byte two-plane program nand	PDF
NAND Flash Abstract: F59L2G81A Contextual Info: ESMT F59L2G81A Flash 2 Gbit 256M x 8 3.3V NAND Flash Memory FEATURES         Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte	Original	F59L2G81A 350us NAND Flash F59L2G81A	PDF
NAND Flash Abstract: F59L4G81A Contextual Info: ESMT F59L4G81A Flash 4 Gbit 512M x 8 3.3V NAND Flash Memory FEATURES         Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes	Original	F59L4G81A 350us NAND Flash F59L4G81A	PDF
Contextual Info: ESM T F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes	Original	F59L1G81A 200us it/528	PDF
Contextual Info: ESM T Preliminary F59L4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	F59L4G81A 250us	PDF
F59L4G81A Abstract: F59L two-plane program nand "4bit correction" Contextual Info: ESMT Preliminary F59L4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	F59L4G81A 4bit/512Byte F59L4G81A F59L two-plane program nand "4bit correction"	PDF
1G NAND flash Abstract: F59L1G81A F59L Contextual Info: ESMT F59L1G81A Operation Temperature Condition -40°C~85°C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit	Original	F59L1G81A 200us 1G NAND flash F59L1G81A F59L	PDF
Contextual Info: ESMT F59L512M81A Preliminary Flash 512Mbit (64M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z z Voltage Supply: 2.7V ~ 3.6V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte	Original	F59L512M81A 512Mbit 250us it/512 100in	PDF
F59L1G81A Contextual Info: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes	Original	F59L1G81A 200us F59L1G81A	PDF
F59L2G81A Abstract: F59L2G81A, F59L2G81 two-plane program nand bsc 60h Contextual Info: ESMT Preliminary F59L2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	F59L2G81A 4bit/512Byte F59L2G81A F59L2G81A, F59L2G81 two-plane program nand bsc 60h	PDF
Contextual Info: ESMT F59L1G81MA 2Y Flash 1 Gbit (128M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte	Original	F59L1G81MA 300us 4bit/512Byte,	PDF
Contextual Info: ESM T Preliminary F59L2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	F59L2G81A 250us	PDF
Contextual Info: ESM T F59L1G81A Operation Temperature Condition -40 C~85 C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	F59L1G81A 200us	PDF