RN47A1 Search Results

RN1110F

Abstract: RN2110F RN47A1JE
Contextual Info: RN47A1JE 東芝トランジスタ シリコンNPN • PNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN47A1JE ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm

Contextual Info: RN47A1 東芝トランジスタ シリコンNPN • PNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN47A1 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm •

RN1110F

Abstract: RN2110F RN47A1JE
Contextual Info: RN47A1JE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN47A1JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)

RN1110F

Abstract: RN2110F RN47A1JE
Contextual Info: RN47A1JE 東芝トランジスタ シリコンNPN • PNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN47A1JE ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm

Contextual Info: RN47A1 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · Unit: mm Two devices are incorporated into an Ultra-Super-Mini (5 pin)

RN1110F

Abstract: RN2110F RN47A1JE
Contextual Info: RN47A1JE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN47A1JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)

Contextual Info: RN47A1 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.

Contextual Info: RN47A1 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Unit: mm Two devices are incorporated into an Ultra-Super-Mini (5 pin)

Contextual Info: RN47A1 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.

RN1110F

Abstract: RN2110F RN47A1 BCR1
Contextual Info: RN47A1 東芝トランジスタ シリコンNPN • PNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN47A1 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm •

RN1110F

Abstract: RN2110F RN47A1
Contextual Info: RN47A1 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.

Contextual Info: RN47A1JE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN47A1JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)

Contextual Info: RN47A1 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process Silicon PNP Epitaxial Type (PCT process) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Including two devices in USV (ultra super mini type with 5 leads)

Contextual Info: RN47A1JE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN47A1JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)

RN1110F

Abstract: RN2110F RN47A1
Contextual Info: RN47A1 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.

Contextual Info: RN47A1JE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A1JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)

RN47A1

Abstract: RN1110F RN2110F 4Q11
Contextual Info: RN47A1 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

toshiba YK smd marking

Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Contextual Info: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製