RN2410 Search Results

Contextual Info: RN2410,RN2411 SILICON PNP EPITAXIAL TYPE SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. + 0.5 2.5-0.3 • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process

RN1410

Abstract: RN1411 RN2410 RN2411
Contextual Info: RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2410, RN2411 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplified circuit design z Reduce a quantity of parts and manufacturing process

Contextual Info: RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2410, RN2411 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplified circuit design

Contextual Info: TOSHIBA RN2410,RN2411 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS R N 7 A i n g RN7A11 • m ■ v ■ m ■ v ■ ■ ■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • With Built-in Bias Resistors • Simplify Circuit Design

Contextual Info: RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2410, RN2411 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplified circuit design

K 2411

Contextual Info: RN2410,2411 SW IT CH IN G , IN V ERT ER C I R C U I T , IN T E R F A C E C I R C U I T Unit in mm AND D R IV E R C I R C U I T A P P L I C A T I O N S . • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process

Contextual Info: RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2410,RN2411 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

RN1410

Abstract: RN1411 RN2410 RN2411
Contextual Info: RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2410,RN2411 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

RN1410

Abstract: RN1411 RN2410 RN2411 TO-236Mod
Contextual Info: RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2410,RN2411 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

M172A

Contextual Info: RN1410,1411 RN1410 Unit in mm SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. + 0 .2 5 1 .5 -C U 5 With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process Complementary to RN2410, RN2411

Contextual Info: RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2410, RN2411 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplified circuit design

Contextual Info: RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2410, RN2411 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process

RN1410

Abstract: RN2410 RN2411
Contextual Info: RN2410,RN2411 シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) 東芝トランジスタ RN2410, RN2411 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm

K 2411 equivalent

Abstract: N2411
Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR R N 2410, RN 2411 TnCUIDA • w w ■ II TECHNICAL DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (RN2410) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • With Built-in Bias Resistors s Simplify Circuit Design

Contextual Info: TOSHIBA TENTATIVE TA8317F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP T A 8 i 1 7 F • m m m f ■ m m LED DRIVER FOR CAM ERA TA8317F is Multi Chip IC incorporates 6 low saturation discrete transistors which equipped bias resistor. This IC is suitable for a camera use LED drive

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

Marking XA XB XC XD XE XF XH XI XJ XK XM

Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
Contextual Info: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107

Contextual Info: RN1410,RN1411 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1410, RN1411 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplified circuit design

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

RN1410

Abstract: RN1411 RN2410 RN2411
Contextual Info: RN1410,RN1411 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1410,RN1411 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

SS2205

Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
Contextual Info: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3

Contextual Info: RN1410,RN1411 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1410, RN1411 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.5 2.5 — 0.3 + 0.25 1 . 5 - 0.15 With Built-in Bias Resistors Simplify Circuit Design

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g