RL 12V 200 OHM Search Results

2N4393

Abstract: marking 18w sot23 sot-23 18w 4392 SST4393 4391 jfet jfet transistor 2n4391 marking N03 TO92 to92 MARKING N02 2N4391
Contextual Info: N-Channel JFET Switch CORPORATION 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES • rds on <300 Ohms (2N4391) • ID(OFF)<100pA • Switches ±10VAC With ±15V Supplies (4392, 4393) PIN CONFIGURATION TO - 92 TO-92 TO-18 ABSOLUTE MAXIMUM RATINGS

18W SOT23

Abstract: marking 18w sot23
Contextual Info: N-Channel JFET Switch LLC 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES • rds on <300 Ohms (2N4391) • ID(OFF)<100pA • Switches ±10VAC With ±15V Supplies (4392, 4393) PIN CONFIGURATION TO - 92 TO-92 TO-18 ABSOLUTE MAXIMUM RATINGS

2N4391

Abstract: SST4391 marking 18w sot23 4392 2N4393 jfet transistor 2n4391 sot-23 18w 4391 jfet marking N03 TO92 SOT23 MARKING N01
Contextual Info: N-Channel JFET Switch LLC 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES • rds on <300 Ohms (2N4391) • ID(OFF)<100pA • Switches ±10VAC With ±15V Supplies (4392, 4393) PIN CONFIGURATION TO - 92 TO-92 TO-18 ABSOLUTE MAXIMUM RATINGS

AN9321

Abstract: MS-012AA RF1K49092 RF1K4909296 TB334
Contextual Info: RF1K49092 Data Sheet August 1999 File Number 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,

Contextual Info: 2 m JANSR2N7404 a r ia s Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June1998 Features Description • 15A,-200V, rDS ON) = 0.290Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs

AN9321

Abstract: MS-012AA RF1K49092 RF1K4909296 TB334 AN9322
Contextual Info: RF1K49092 Data Sheet January 2002 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,

Contextual Info: RF1K49092 Data Sheet 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET August 1999 File Number 3968.5 Features • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) [ /Title (RF1K This complementary power MOSFET is manufactured using

1E14

Abstract: 2E12 FSS230R4 JANSR2N7400
Contextual Info: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

relay 12v 100A

Abstract: 1E14 2E12 FSL230R4 JANSR2N7396
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

MOSFET S1A

Abstract: datasheet RF3V49092 MO-169AB RF3S49092SM RF3S49092SM9A RF3V49092 AN9322
Contextual Info: RF3V49092, RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated

kp-98

Abstract: Pspice AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49211 RF1K4921196 TB334
Contextual Info: RF1K49211 Data Sheet August 1999 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET • 7A, 12V • rDS ON = 0.020Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature

MO-169AB

Abstract: RF3S49092SM RF3S49092SM9A N-Channel UltraFET Power MOSFETs
Contextual Info: RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in

1E14

Abstract: 2E12 FSF250R4 JANSR2N7406
Contextual Info: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSL923A0D FSL923A0D1 FSL923A0D3 FSL923A0R FSL923A0R1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSL923A0D, FSL923A0R Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
Contextual Info: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSF9250R4 JANSR2N7404
Contextual Info: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460

RF1K49093

Abstract: AN9321 AN9322 MS-012AA RF1K4909396 TB334
Contextual Info: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses

AN7254

Abstract: AN7260 AN9321 AN9322 MS-012AA RF1K49090 RF1K4909096 TB334
Contextual Info: RF1K49090 Data Sheet August 1999 3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET Power MOSFET File Number 3985.6 Features • 3.5A, 12V This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses

RF1K4909396

Abstract: delta motor RF1K49093 AN9321 AN9322 MS-012AA TB334
Contextual Info: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses