FSL9230D3 Search Results

FSL9230D3 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FSL9230D3		Fairchild Semiconductor	3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFET	Original	PDF	80.88KB	9
FSL9230D3		Intersil	3A, -200V, 1.50 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs	Original	PDF	46.98KB	8

FSL9230D3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
40842 Contextual Info: ffj h a fr fr is U FSL9230D, S E M I C O N D U C T O R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros QN = 1.50Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	FSL9230D, -200V, MIL-STD-750, MIL-S-19500, -160V, 100ms; 500ms; 40842	PDF
1E14 Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 Contextual Info: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	FSL9230D, FSL9230R -200V, O-205AF 254mm) FSL9230R 1E14 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R1	PDF
integrated circuits equivalents list Abstract: Rad Hard in Fairchild for MOSFET Contextual Info: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	FSL9230D, FSL9230R -200V, integrated circuits equivalents list Rad Hard in Fairchild for MOSFET	PDF
Contextual Info: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros ON = 1 -50ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	FSL9230D, FSL9230R -200V, O-205AF 254mm)	PDF
1E14 Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 40842 Contextual Info: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	FSL9230D, FSL9230R -200V, 1E14 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 40842	PDF