FSYA250D3 Search Results

FSYA250D3 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FSYA250D3		Fairchild Semiconductor	Transistor Mosfet N-CH 200V 27A 3SMD-1	Original	PDF	87.94KB	10
FSYA250D3		Intersil	27A, 200V, 0.100 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF	47.09KB	8

FSYA250D3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Rad Hard in Fairchild for MOSFET Abstract: 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3 Contextual Info: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	FSYA250D, FSYA250R Rad Hard in Fairchild for MOSFET 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3	PDF
1E14 Abstract: 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3 Contextual Info: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	FSYA250D, FSYA250R 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3	PDF
Contextual Info: FSYA250D, FSYA250R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs September 1997 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	Original	FSYA250D, FSYA250R 1-800-4-HARRIS	PDF
Contextual Info: FSYA250D, FSYA250R ¡fì HARRIS S E M I C O N D U C T O R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Ju ne 1 998 Features rDS C N) = 0.100S2 T h e D is c re te P ro d u c ts O p e ra tio n of H a rris S e m ic o n d u c to r h a s d eve lo pe d a s e rie s o f R a d ia tio n H a rd e n e d M O S F E T s	OCR Scan	FSYA250D, FSYA250R MIL-STD-750, MIL-S-19500, 500ms;	PDF
Rad Hard in Fairchild for MOSFET Abstract: 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3 Contextual Info: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	FSYA250D, FSYA250R Rad Hard in Fairchild for MOSFET 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3	PDF
Contextual Info: S FSYA250D, FSYA250R Semiconductor y 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 27A, 200V, rDS 0 N = 0.100£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	FSYA250D, FSYA250R FSYA250R	PDF