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FSYA250D3 Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FSYA250D3		Fairchild Semiconductor	Transistor Mosfet N-CH 200V 27A 3SMD-1	Original	PDF	87.94KB	10
FSYA250D3		Intersil	27A, 200V, 0.100 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF	47.09KB	8

FSYA250D3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Rad Hard in Fairchild for MOSFET Abstract: 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3 Contextual Info: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	fsya250d fsya250r rad hard in fairchild for mosfet 1e14 +52e12 fsya250d1 fsya250d3 fsya250r1 fsya250r3	PDF
1E14 Abstract: 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3 Contextual Info: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	fsya250d fsya250r 1e14 2e12 +4fsya250d1 fsya250d3 fsya250r1 fsya250r3	PDF
Contextual Info: FSYA250D, FSYA250R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs September 1997 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	Original	fsya250d fsya250r 1-800-4-harris	PDF
Contextual Info: FSYA250D, FSYA250R ¡fì HARRIS S E M I C O N D U C T O R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Ju ne 1 998 Features rDS C N) = 0.100S2 T h e D is c re te P ro d u c ts O p e ra tio n of H a rris S e m ic o n d u c to r h a s d eve lo pe d a s e rie s o f R a d ia tio n H a rd e n e d M O S F E T s	OCR Scan	fsya250d fsya250r mil-std-750 mil-s-19500 +1500ms	PDF
Rad Hard in Fairchild for MOSFET Abstract: 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3 Contextual Info: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	fsya250d fsya250r rad hard in fairchild for mosfet 1e14 +52e12 fsya250d1 fsya250d3 fsya250r1 fsya250r3	PDF
Contextual Info: S FSYA250D, FSYA250R Semiconductor y 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 27A, 200V, rDS 0 N = 0.100£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	fsya250d fsya250r	PDF