RFTM Search Results

SANYO TFT

Abstract: hosiden samsung tv samsung pqfp RAM
Contextual Info: 62 00/640 0 SHEET SHEET SHEET SHEET SHEET SHEET SHEET SHEET SHEET SHEET SHEET SHEET SHEET SHEET SHEET SHEET SHEET SHEET SHEET SHEET SHE ET SHEET SCHTEMPlICS Al: C O V E R S H E E T 1 :C P U 2:5101+ MA BUFFER 3:5102 • 4 :C A C H E RftM 8< T A G R A M 5:5103+ RTC

J111 national

Abstract: J112 J113 25CC J111 MMBFJ111 MMBFJ112 MMBFJ113 MARK 6C SOT-23 k20a
Contextual Info: S e m i c o n d u c t o r " J111 J112 J113 G MMBFJ111 MMBFJ112 MMBFJ113 T O -9 2 D M ark: 6 P / 6 R / 6 S N-Channel Switch T his device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Proce ss 51.

M7707

Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
Contextual Info: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone

0X00

Abstract: AMIS-53000 class e power amplifier delta UPS circuit diagram AMIS 521
Contextual Info: AMIS-53000 Frequency Agile Transceiver AMIS-53000 Frequency Agile Transceiver Data Sheet AMI Semiconductor – Aug. 05, Rev. 1.0 www.amis.com 1 Data Sheet AMIS-53000 Frequency Agile Transceiver Data Sheet Table of Contents 1.0 Overview of the AMIS-53000. 5

Contextual Info: 2 4 3 5 j j j j j j j j Kontaktbelegung contact loading 1 2 2:1 Kontakt-Typ pin type j j j j jj jjj j jj jjj j jj jjj j j j j j j j I I 6 10 7 6 j j j j j j j j j j j j j j j j j j j j j j j j i u i; k A B C D E F jj jj jjj jj jj jjj jj jj jjj j j j j j j j

power combiner broadband transformers

Abstract: 4 port circulator high power duplexer HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint X-band Gan Hemt resistor parasitic capacitance DIAMOND TECHNOLOGIES DUAL JUNCTION CIRCULATOR CT1310D RFTM 9926 transistor
Contextual Info: Diamond Rf Resistives: The Answer to High Power and Low Capacitance | Novembe. Page 1 of 6 November 2011 issue: Technical Feature Diamond Rf™ Resistives: The Answer to High Power and Low Capacitance A single 0402 resistor, manufactured on a CVD diamond substrate, can dissipate 20 W of continuous

DIODE mur 120

Contextual Info: ÏK I\ TOSHIBA IV l i TMP86CK74A/CM74A CMOS 8 -Bit Microcontroller TMP86CK74A/TMP86CM74A TMP86CK74A/CM74A is a low power, high-speed and high-performance 8-bit single chip microcomputer, including large capacity ROM/RAM, input/output ports, m ultiple timer/counter, serial interface, 8-bit AD

AMIS-53050

Abstract: 100uF CHA MET opts RFTM AMIS53050 M-20639-002
Contextual Info: AMIS-53050 Frequency Agile Transceiver AMIS-53050 Frequency Agile Transceiver Data Sheet AMI Semiconductor – Jan. 07, M-20639-002 www.amis.com 1 Data Sheet AMIS-53050 Frequency Agile Transceiver Data Sheet Table of Contents 1.0 Overview of the AMIS-53050. 5

Contextual Info: £ = 7 S G S -T H O M ^ 7# . S O N H O g œ illL iœ li[liS i B Y T 3 0 P-2 0 0 -> 4 0 0 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING SUITABLE APPLICATIONS ■ FREE WHEELING DIODE IN CONVERTERS

hy925

Abstract: TA-1114
Contextual Info: REVISIONS REV ECN DESCRIPTION BY DATE A RELEASED J70279 M.K S/19/"97 B REVISED ADDED LEFT PUSH J80392 H.Y 9/2V98 C /ISED(ADOED BLACK BUTTON) J80454 H.Y 11/13/98 ( 106.83 ) <1> COMPONENT MHEHAL HOUSMG FIAME RETMKMKT JtESM (U L94V -0) <2> O PIN PHOSPHOR BRONZE

Contextual Info: GRF5020 Preliminary +28.5 dBm Power-LNA 0.1 – 3.8 GHz Package: 3.0 x 3.0 mm QFN-16 Product Description Features • 1.7 – 2.7 GHz with single match • 17.5 dB Gain at 2500 GHz • Evaluation Board NF: 0.77 dB at 2.5 GHz • OP1dB: +28.5 dBm at Vdd: 8.0 volts

Contextual Info: GRF4003 Preliminary Broadband LNA/Linear Driver 100 MHz to 3800 MHz Package: 6-Pin DFN Product Description Features • Broadband: 100 MHz to 3800 MHz  0.72 dB Noise Figure at 2600 MHz  13.5 dB Gain at 2600 MHz  Exceptional Low Voltage Linearity 

TTK SG 2368

Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
Contextual Info: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A

signal relay

Abstract: TTL 7431 RXIDE43 rk6512 RXSF1 7J31 RIT relay ASEA ITT relays RXIL 2
Contextual Info: ASEA Catalogue RK 65-11 E Edition 1 March 1975 File R, Part 1 Three-phase instantaneous overcurrent protective relays Used prim a rily as a pro te ction against sh o rt c irc u its i t m otors, busbars etc., b u t is also suita ble fo r in itia tin g the operation o f o th e r p ro te ctive relays.

S1m aa25

Abstract: 252613 pentium processor block diagram 855PM SHARED MEMORY 855pm MOTHERBOARD CIRCUIT diagram 855PM cpu support
Contextual Info: R Intel 855PM Chipset Memory Controller Hub MCH DDR 200/266 MHz Datasheet January 2004 Order Number: 252613-002 R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

Contextual Info: REVISIONS ECN, EROUTINO NO. P RO PO SAL PRO PO SAL SVM IB C OKIE IW U 6.I 1 m . 16,12 APPRO. LC LC IN DIPPED ZONE 64-00.90 MATERIALS: HOUSINGi HIGH TEMP PLASTIC PA46 CDLDURi BLACK, FLAMMABILITY RATING UL 9 4 V -0 CONTACTS! PHOSPHOR BRONZE PLATINGi GOLD PLATING<SEE PART NO. CDDE FOR MINIMUM

Contextual Info: BGS12PL6 General purpose RF CMOS power SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Revision 2.0, 2013-08-09 Power Management & Multimarket Edition August 9, 2013 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG

Contextual Info: BGS12PL6 General purpose RF CMOS power SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Revision 2.1, 2013-11-29 Power Management & Multimarket Edition November 29, 2013 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG

Contextual Info: BGS13SL9 Wideband RF SP3T Switch Data Sheet Revision 2.0, 2013-10-18 Final Power Management & Multimarket Edition October 18, 2013 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGS12SN6 Wideband RF SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Revision 1.0, 2013-10-18 Power Management & Multimarket Edition October 18, 2013 Published by Infineon Technologies AG 81726 Munich, Germany c 2011 Infineon Technologies AG

Contextual Info: DX □X 1.27MM PITCH SERIES HIGH-DENSITY I/O CONNECTOR Scope DX series high-density I/O connectors with bellow con­ tacts are perfect for tomorrow's miniaturized electronic devices. This new 1.27 mm (0.050") interconnect design ensures positive locking, effortless coupling, terminal pro­

SCN2681A

Abstract: SCN2681AC marking 6J reset scn2681
Contextual Info: [M m ni\MM SCN2681 Dual asynchronous receiver/transmitter DUART Product specification Supersedes data of 1995 May 01 IC19 Data Handbook PhiRps Semiconductors 1998 Sep 04 PHILIPS Philips Semiconductors Product spe< ification Dual asynchronous receiver/transmitter (DUART)

Contextual Info: Tem ic U2895B S e m i c o n d u c t o r s Modulation PLL for GSM, DCS and PCS Systems Description The U2895B is a monolithic integrated circuit. It is realized using TEMIC’s advanced silicon bipolar UHF5S technology. The device integrates a mixer, an I/Q modulator, a phase-frequency detector PFD with two

Contextual Info: 87C51FA-20/-3 COMMERCIAL/EXPRESS 20 MHz CHMOS MICROCONTROLLER • 87CS1FA-20—3.5 MHz to 20 MHz, VCc = 5V ±20% 87C51FA-3—24 MHz Internal Operation, V q c = 5V ±20% High Performance CHMOS EPROM ■ Boolean Processor ■ 24 MHz Internal Operation -3 only