RF TRANSISTOR MARK CODE E Search Results

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

transistor mark code

Abstract: rf diodes TOSHIBA Package
Contextual Info: 3-Pin Chip Scale Package Thin Type Embossed TPL3 Tape for the CST3 Package Tape Dimensions Unit: mm 2.0 ±0.05 φ1.5 ±0.1 0.2 4.0 ±0.1 Y 1.1 φ0.5 8.0 3.5 ±0.05 1.75 Y X X’ Y’ Y’ Feed direction 0.7 X Cross section Y-Y’ X’ Cross section X-X’

BFS20R

Abstract: IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor
Contextual Info: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I E N 6E SE LL SCH AF BFS 20 is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package 23 A 3 DIN 41 869 , intended for use in film circuits. The transistor BFS 20 is marked "NA". It is also available upon request with changed

TRIAC BCR 16 km

Abstract: PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04
Contextual Info: Part Numbers Part Numbers 1 to 2 Part No. Destination Thyristor and triac Part No. designation CR 8 K M -12 A BCR 8 C M -12 L A Power Transistor Product No. Designation Renesas Uniform Product Number Current ratings (Ex.) Version Commutation characteristics (Triac only)

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1 /F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation

transistor f1

Abstract: MARKING CODE f5 F5 marking code F5 MARK MARKING CODE CCB am fm rf amplifier marking CODE F2 f1 transistor mark KST1009F2 KST1009F3
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1 /F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation

Transistor BFR 35

Abstract: Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91
Contextual Info: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package

LT 2107

Contextual Info: MCRF355/360 13.56 MHz Passive RFID Device with Anticollision FEATURES • Frequency of operation: 13.56 MHz • Built-in anticollision algorithm for reading up to 50 tags in the same RF field • “Cloaking” feature minimizes the detuning effects of adjacent tags

SRD-MPT1340-GB

Abstract: cept-lpd-xx 12 volt smps Circuit diagram RX2 RADIOMETRIX RF transmitter 433.92 4 pin 12v receiver RTD 433MHz helical antenna 433 FM-RX2-433F-3V 433 mhz high gain antenna radiometrix 433
Contextual Info: FM TRANSMITTER & RECEIVER MODULES. 2ND GENERATION FM-TX2-XXX FM-RX2-XXX FEATURES • • • • • • • • • MINIATURE PACKAGE PLUG IN COMPATIBLE WITH FM-TX1 / RX1 EMC CONFORMANT TO ETS 300-683 TYPE APPROVED TO ETS 300-220 DATA RATES TO 40KBIT/S

power supply aps 231

Abstract: 125 kHz RFID parallel antenna center cloak rfid MCRF355 MCRF360 200B DK-2750 RG41 4892 mosfet 4634 regulator
Contextual Info: MCRF355/360 13.56 MHz Passive RFID Device with Anticollision FEATURES • Frequency of operation: 13.56 MHz • Built-in anticollision algorithm for reading up to 50 tags in the same RF field • “Cloaking” feature minimizes the detuning effects of adjacent tags

Transistor BFR 97

Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
Contextual Info: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package

phototransistor microwaves

Abstract: PS2845-4A
Contextual Info: WORLD'S SMALLEST CLASS, FOUR CHANNEL, 12 PIN ULTRA SMALL SOP OPTOCOUPLER PS2845-4A FEATURES DESCRIPTION • COMMON LEAD: anode, cathode, collector common The PS2845-4A is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

SRD-MPT1340-GB

Abstract: cept-lpd-xx Radiometrix mpt1340 cept-lpd-xx tx2-433 RX2-433 TX2-433 433 MHz RF module 3 pin 5v image RX2-433-A RX2 RADIOMETRIX rx2-418-f
Contextual Info: Radiometrix Issue E, 3rd December 1998 TX2 & RX2 UHF FM Data Transmitter and Receiver Modules The TX2 and RX2 data link modules are a miniature PCB mounting UHF radio transmitter and receiver pair which enable the simple implementation of a data link at upto 40 kbit/s at distances upto 75

HA17902

Abstract: DP-14 HA17902FPJ HA17902FPK HA17902PJ PRDP0014AB-A PRSP0014DF-B
Contextual Info: HA17902 Series Quad Operational Amplifier REJ03D0685-0100 Previous: ADE-204-045 Rev.1.00 Jun 15, 2005 Description The HA17902 is an internal phase compensation quad operational amplifier that operates on a single-voltage power supply and is appropriate for use in a wide range of general-purpose control equipment.

Contextual Info: SN820X Wi-Fi Network Controller Module Family User Manual Version: 2.2 March 3, 2014 Note: Murata Electronics N.A, Inc Murata reserves the right to make changes in specifications at any time and without notice. The information furnished in this data sheet is believed to be accurate and reliable. However, no responsibility is

CBVK741B019

Abstract: F63TNR MMBTH20 MPSH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20
Contextual Info: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*

Diode RL 4B

Abstract: phototransistor microwaves Diode 4B PS2841-4A PS2841-4B 4b, optocoupler PS280X
Contextual Info: PRELIMINARY DATA SHEET WORLD'S SMALLEST CLASS, PS2841-4A FOUR CHANNEL, 12 PIN PS2841-4B ULTRA SMALL SOP OPTOCOUPLER FEATURES DESCRIPTION • COMMON LEAD: PS2841-4A: cathode, collector common PS2841-4B: anode, collector common The PS2841-4A and PS2841-4B are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon

Diode 4B

Abstract: Diode RL 4B phototransistor microwaves PS2841-4A PS2841-4B 4B marking
Contextual Info: WORLD'S SMALLEST CLASS, PS2841-4A FOUR CHANNEL, 12 PIN PS2841-4B ULTRA SMALL SOP OPTOCOUPLER FEATURES DESCRIPTION • COMMON LEAD: PS2841-4A: cathode, collector common PS2841-4B: anode, collector common The PS2841-4A and PS2841-4B are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon

MPSH10 fairchild transistor

Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

CBVK741B019

Abstract: F63TNR MMBT918 PN2222N PN918 RF 107 transistor tc 144
Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

mmbt918

Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

MPSH10 s parameters

Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

nk90

Abstract: mje321 BF-133 CBVK741B019 F63TNR MMBTH81 MPSH81 PN2222N pnp rf transistor Bf133
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*